Abstract: A method of obtaining a doped semiconductor layer, including the successive steps of: a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element A1 and a second element A2, an ion implantation of a first element B which is a dopant for the alloy and of a second element C which is not a dopant for the alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of the alloy.

Abstract: An optoelectronic system includes a photoelectric transducer to emit or receive optical waves and a waveguide to guide waves emitted by the transducer or to guide waves to the transducer, includes a stack successively including a porous first layer of first type doped semiconductor material, a second layer of first type doped semiconductor material doped and lightly doped, a zone including quantum wells, a third layer of semiconductor material doped according to a second doping type opposite to the first type, the photoelectric transducer including a first portion of the porous first layer, a first portion of the second layer, at least a first portion of the zone including the quantum well(s) and at least a first portion of the third layer; the waveguide including a second portion of the second layer adjacent to the first portion and disposed on a second portion of the porous first layer.

Abstract: Method for manufacturing micro-LEDs comprising the following steps: i) providing a stack comprising at least one strongly n-doped GaN layer (104), an n-doped GaN layer (105), quantum wells (106) and a p-doped GaN layer (107), ii) porosifying the GaN layer (104), to obtain a porosified GaN layer (104?), iii) forming mesas in the stack, iv) covering the porosified GaN layer (104?) with a second electrode (301) or with an encapsulation layer (302), the second electrode (301) or the encapsulation layer (302) being in direct contact with the porosified GaN layer (104?). step ii) being carried out so that the optical index of the porosified GaN layer (104?) does not vary by more than 10% with respect to the optical index of the second electrode (301) and/or with respect to the optical index of the encapsulation layer (302).

Abstract: A method of manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following steps: a) forming a semiconductor support stack including at least one doped semiconductor layer; b) simultaneously forming, during a common epitaxy step, an active emission semiconductor stack of the LED and an active reception semiconductor stack of the photodiode; c) forming trenches delimiting first and second support pads; and d) porosifying the doped semiconductor layer in the first support pad without porosifying this layer in the second support pad, or porosifying the doped semiconductor layer in the second support pad without porosifying this layer in the first support pad.

Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a connection surface of a control circuit, an active diode stack including at least first and second semiconductor layers of opposite conductivity types, so that the second semiconductor layer in the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one insulating layer; b) forming in the active stack trenches delimiting a plurality of diodes, the trenches extending through the insulating layer and emerging onto the connection surface of the control circuit; and c) forming in the trenches metallizations connecting the second semiconductor layer to the connection surface of the control circuit.

Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a surface of a control circuit, a diode stack including first and second semiconductor layers of opposite conductivity types, so that the second layer is electrically connected to metal pads of the control circuit; b) forming in the active stack trenches delimiting a plurality of diodes connected to separate metal pads of the control circuit; c) depositing an insulating layer on the lateral walls of the trenches; d) partially removing the insulating layer to expose the sides of the portions of the first layer delimited by the trenches; and e) forming a metallization coating the lateral walls and the bottom of the trenches and contacting the sides of the portions of the first layer delimited by the trenches.

Abstract: An emissive display device including LEDs, including a plurality of pixels, each including: an elementary control cell formed inside and on top of a semiconductor substrate; a first LED capable of emitting in a first wavelength range, arranged on the upper surface of the elementary control cell and having a first conduction region connected to a first connection pad of the elementary control cell; and a second LED capable of emitting in a second wavelength range, having a surface area smaller than that of the first LED, arranged on the upper surface of the first LED opposite a central region of the first LED, and having a first conduction region connected to a second connection pad of the elementary control cell via a first conductive via crossing the first LED.

Abstract: A method of obtaining a doped semiconductor layer, including the successive steps of: a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element A1 and a second element A2, an ion implantation of a first element B which is a dopant for the alloy and of a second element C which is not a dopant for the alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of the alloy.

Abstract: An emissive display device including LEDs, including a plurality of pixels, each including: an elementary control cell formed inside and on top of a semiconductor substrate; a first LED capable of emitting in a first wavelength range, arranged on the upper surface of the elementary control cell and having a first conduction region connected to a first connection pad of the elementary control cell; and a second LED capable of emitting in a second wavelength range, having a surface area smaller than that of the first LED, arranged on the upper surface of the first LED opposite a central region of the first LED, and having a first conduction region connected to a second connection pad of the elementary control cell via a first conductive via crossing the first LED.

Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a surface of a control circuit, a diode stack including first and second semiconductor layers of opposite conductivity types, so that the second layer is electrically connected to metal pads of the control circuit; b) forming in the active stack trenches delimiting a plurality of diodes connected to separate metal pads of the control circuit; c) depositing an insulating layer on the lateral walls of the trenches; d) partially removing the insulating layer to expose the sides of the portions of the first layer delimited by the trenches; and e) forming a metallization coating the lateral walls and the bottom of the trenches and contacting the sides of the portions of the first layer delimited by the trenches.

Abstract: A method of manufacturing an optoelectronic device, including: a) transferring, onto a connection surface of a control circuit, an active diode stack including at least first and second semiconductor layers of opposite conductivity types, so that the second semiconductor layer in the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one insulating layer; b) forming in the active stack trenches delimiting a plurality of diodes, the trenches extending through the insulating layer and emerging onto the connection surface of the control circuit; and c) forming in the trenches metallizations connecting the second semiconductor layer to the connection surface of the control circuit.

Abstract: The invention relates to an apparatus comprising a functional component likely to be thermally overloaded during the operation thereof, and a system for cooling the component, comprising: a thermoelectric module comprising a cold surface and a hot surface, the cold surface being thermally coupled with the component; a heat sink thermally coupled with the hot surface of the module, the heat sink including an exchange surface with the surrounding environment and at least one cell containing a phase-change material (PCM), the PCM material contained in the cell or cells being suitable for melting when the heat released from the cold surface of the module is that of the thermally overloaded component, the exchange surface being suitable for bringing the PCM material from the molten phase to the solid phase thereof when the heat released from the cold surface of the module is that of the operational component which is not thermally overloaded.

Abstract: The invention relates to an apparatus comprising a functional component likely to be thermally overloaded during the operation thereof, and a system for cooling the component, comprising: a thermoelectric module comprising a cold surface and a hot surface, the cold surface being thermally coupled with the component; a heat sink thermally coupled with the hot surface of the module, the heat sink including an exchange surface with the surrounding environment and at least one cell containing a phase-change material (PCM), the PCM material contained in the cell or cells being suitable for melting when the heat released from the cold surface of the module is that of the thermally overloaded component, the exchange surface being suitable for bringing the PCM material from the molten phase to the solid phase thereof when the heat released from the cold surface of the module is that of the operational component which is not thermally overloaded.

Abstract: The device for generating current and/or voltage includes means for making a fluid flow between an inlet and an outlet of the device, and a thermoelectric module having a first active surface exposed to the fluid. The thermoelectric module includes apertures, and is placed in the path of the fluid between the inlet and the outlet of the device, the first active surface being substantially perpendicular to the direction of flow of the fluid.

Abstract: The device for generating current and/or voltage includes means for making a fluid flow between an inlet and an outlet of the device, and a thermoelectric module having a first active surface exposed to the fluid. The thermoelectric module includes apertures, and is placed in the path of the fluid between the inlet and the outlet of the device, the first active surface being substantially perpendicular to the direction of flow of the fluid.