Abstract: We describe a capnometer for detecting a concentration of a component in a gas, wherein said gas is inhaled and/or exhaled by a patient, said capnometer comprising: an air flow region through which said gas passes to and/or from said patient's lung; a mid-IR semiconductor emitter configured to provide IR light at a wavelength in the range 3-5 ?m; a mid-IR semiconductor detector to detect said IR light; a reflector to reflect said IR light emitted by said emitter; wherein said emitter, said detector and said reflector are arranged such that said IR light emitted by said emitter passes through said air flow region via said reflector to said detector.

Abstract: We describe a capnometer for detecting a concentration of a component in a gas, wherein said gas is inhaled and/or exhaled by a patient, said capnometer comprising: an air flow region through which said gas passes to and/or from said patient's lung; a mid-IR semiconductor emitter configured to provide IR light at a wavelength in the range 3-5 ?m; a mid-IR semiconductor detector to detect said IR light; a reflector to reflect said IR light emitted by said emitter; wherein said emitter, said detector and said reflector are arranged such that said IR light emitted by said emitter passes through said air flow region via said reflector to said detector.

Abstract: We describe a capnometer for detecting a concentration of a component in a gas, wherein said gas is inhaled and/or exhaled by a patient, said capnometer comprising: an air flow region through which said gas passes to and/or from said patient's lung; a mid-IR semiconductor emitter configured to provide IR light at a wavelength in the range 3-5 ?m; a mid-IR semiconductor detector to detect said IR light; a reflector to reflect said IR light emitted by said emitter; wherein said emitter, said detector and said reflector are arranged such that said IR light emitted by said emitter passes through said air flow region via said reflector to said detector. The reflector is selected from a Fresnel reflector and a reflective diffractive optical element, such as.a Fresnel zone plate.

Abstract: We describe a capnometer for detecting a concentration of a component in a gas, wherein said gas is inhaled and/or exhaled by a patient, said capnometer comprising: an air flow region through which said gas passes to and/or from said patient's lung; a mid-IR semiconductor emitter configured to provide IR light at a wavelength in the range 3-5 ?m;a mid-IR semiconductor detector to detect said IR light; a reflector to reflect said IR light emitted by said emitter; wherein said emitter, said detector and said reflector are arranged such that said IR light emitted by said emitter passes through said air flow region via said reflector to said detector.

Abstract: We describe a capnometer for detecting a concentration of a component in a gas, wherein said gas is inhaled and/or exhaled by a patient, said capnometer comprising: an air flow region through which said gas passes to and/or from said patient's lung; a mid-IR semiconductor emitter configured to provide IR light at a wavelength in the range 3-5 ?m;a mid-IR semiconductor detector to detect said IR light; a reflector to reflect said IR light emitted by said emitter; wherein said emitter, said detector and said reflector are arranged such that said IR light emitted by said emitter passes through said air flow region via said reflector to said detector.

Abstract: The disclosed technology relates generally hybrid displays with pixels that include both inorganic light emitting diodes (ILEDs) and organic light emitting diodes (OLEDs). The disclosed technology provides a hybrid display that uses a mixture of ILEDs and OLEDs in each pixel. In certain embodiments, each pixel in the hybrid display includes a red ILED, a blue ILED, and a green OLED. In this instance, the OLED process would not require a high resolution shadow mask, thereby enhancing the manufacturability of OLEDs for larger format displays. Additionally, the OLED process in this example would not require any fine lithography. The OLED subpixel (e.g., green subpixel) can be larger and the ILEDs can be small (e.g., micro-red and micro-blue ILEDs). The use of small ILEDs allows for other functions to be added to the pixel, such as micro sensors and micro integrated circuits.

Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

Abstract: The disclosed technology relates generally hybrid displays with pixels that include both inorganic light emitting diodes (ILEDs) and organic light emitting diodes (OLEDs). The disclosed technology provides a hybrid display that uses a mixture of ILEDs and OLEDs in each pixel. In certain embodiments, each pixel in the hybrid display includes a red ILED, a blue ILED, and a green OLED. In this instance, the OLED process would not require a high resolution shadow mask, thereby enhancing the manufacturability of OLEDs for larger format displays. Additionally, the OLED process in this example would not require any fine lithography. The OLED subpixel (e.g., green subpixel) can be larger and the ILEDs can be small (e.g., micro-red and micro-blue ILEDs). The use of small ILEDs allows for other functions to be added to the pixel, such as micro sensors and micro integrated circuits.

Abstract: A composition comprises a low molecular weight polyelectrolyte, a high molecular weight polymer, a light-emitting material and a salt. The viscosity average molecular weight of the high molecular weight polymer in at least one solvent is at least 5 times greater than the viscosity average molecular weight of the low molecular weight polyelectrolyte in the at least one solvent, and the high molecular weight polymer and the low molecular weight polymer are preferably different molecular weight polymers of the same polyelectrolyte material, such as polyethylene oxide. The composition is used to provide a light emitting layer (103) in a light-emitting electrochemical cell between an anode (101) for injecting positive charge carriers and a cathode (105) for injecting negative charge carriers.

Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

Abstract: An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface-modification layers consist essentially of a partially fluorinated fullerene.

Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.

Abstract: The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

Abstract: An organic electroluminescence element having a cathode as a top electrode, and excelling in luminance efficiency, drive voltage, and operational life is provided. The organic electroluminescence element includes an anode over a substrate and a luminescent layer over the anode. The luminescent layer comprises an organic material. An electron injection layer is over the luminescent layer for injecting electrons into the luminescent layer. The electron injection layer is a metal including at least one of an alkaline metal and an alkaline earth metal. A fullerene layer is over the electron injection layer and includes fullerenes and at least one of an alkaline metal and an alkaline earth metal. The at least one of the alkaline metal and the alkaline earth metal included in the fullerene layer has a lower work function than a lowest unoccupied molecular orbit energy level of the fullerenes. A cathode is over the fullerene layer.

Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.

Abstract: A composition for ink jet printing an opto-electrical device, the composition comprising: an electroluminescent or charge transporting organic material; and a high boiling point solvent having a boiling point higher than water.

Abstract: An optocoupler including: a substrate comprising a photodetector; a transparent electrically-insulating layer disposed over the photodetector; and an organic electroluminescent device having an organic electroluminescent layer disposed between a first and a second electrode disposed over the transparent electrically-insulating layer; the photodetector arranged to detect light emitted from the organic electroluminescent device; wherein the optocoupler comprises a second current path between the first and second electrodes in addition to a first current path between the first and second electrode which in operation causes the organic electroluminescent layer to emit light.

Abstract: A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode over a substrate using a solution processing technique; forming a workfunction modifying layer over the source and drain electrodes using a solution processing technique; and depositing an organic semi-conductive material in a channel region between the source and drain electrode using a solution processing technique.

Abstract: An active matrix display comprises a display area of the matrix comprising drive circuitry including a control circuit comprising chiplets outside the display area. The output of the control circuit is distributed among the plurality of chiplets. This arrangement is advantageous in that the chiplets allow for a much smaller fan-in and fan-out structure, thus allowing a much larger percentage of the substrate to be devoted to display area.

Abstract: An optical sensor array comprises a photo-sensitive area formed by an array of chiplets having individual light-sensitive elements, each element configured to produce a signal or signals in response to incident light. The displacement of a chiplet from a predetermined position is derivable from the output signal or signals of the element or elements associated with the chiplet. The arrangement provides a method of measuring the displacement of at least one chiplet in an active display.