Abstract: In some embodiments, an electronic device optionally identifies a person's face, and optionally performs an action in accordance with the identification. In some embodiments, an electronic device optionally determines a gaze location in a user interface, and optionally performs an action in accordance with the determination. In some embodiments, an electronic device optionally designates a user as being present at a sound-playback device in accordance with a determination that sound-detection criteria and verification criteria have been satisfied. In some embodiments, an electronic device optionally determines whether a person is further or closer than a threshold distance from a display device, and optionally provides a first or second user interface for display on the display device in accordance with the determination. In some embodiments, an electronic device optionally modifies the playing of media content in accordance with a determination that one or more presence criteria are not satisfied.

Abstract: A compound, represented by formula (I): wherein R, R1, R2 and R4 are independently of one another a hydrogen atom or a C1-C6 linear or branched alkyl, or a C1-C6 linear or branched alkenyl, or a C1-C6 linear or branched alkynyl; R3 is a hydrogen atom, OR4 or a C1-C6 linear or branched alkyl, or a C1-C6 linear or branched alkenyl, or a C1-C6 linear or branched alkynyl; and n=4 to 11; its functions and isolation process thereof.

Abstract: Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.

Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

Abstract: A quantum dot vertical cavity surface-emitting laser has a low threshold gain. Top and bottom mirrors have a low mirror loss, with at least one of the mirrors being laterally oxidized to form semiconductor/oxide mirror pairs. In one embodiment, mode control layers reduce the optical field intensity in contact layers, reducing optical absorption. In one embodiment, delamination features are included to inhibit the tendency of laterally oxidized mirrors from delaminating.

Abstract: An optical device with a wavelength of operation, the device comprising a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a contact region of a first conductivity type and a second conductivity type wherein the light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

Abstract: An optical device includes a light emitting region which emits light at the wavelength of operation, the light emitting region includes at least one active region. An n-type conductivity contact region is positioned on one surface of the active region and a p-type conductivity contact region is positioned on an opposite surface. The p surface of a p/n tunnel junction is positioned on the opposite surface of the p-type conductivity contact region and an n-type conductivity contact region is positioned on the n surface. The light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.

Abstract: A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.

Abstract: A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.

Abstract: A waveguide device for optical amplification and light amplification by stimulated emission radiation comprises an optical medium formed from a bulk glass. The optical medium is fused to a planar substrate to form a lower cladding. The bulk glass is subsequently thinned, patterned and coated with an upper cladding to form waveguide channels with sufficient mode confinement and mode field dimension compatible with direct coupling to optical fibers to achieve low insertion loss and a reduced polarization dependent loss, while obviating the need for critical fiber alignment using lensed or tapered fibers. The bulk glass is preferably an Er-doped or Er—Yb co-doped bulk glass, which when fused to quartz, or other low refractive index glass or cladding, provides a gain region less than about 5 cm long that is strongly index-guided to better confine the pump beam, and in the case of an amplifier, the signal beam.

Abstract: A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.

Abstract: A quantum dot vertical cavity surface-emitting laser has a low threshold gain. Top and bottom mirrors have a low mirror loss, with at least one of the mirrors being laterally oxidized to form semiconductor/oxide mirror pairs. In one embodiment, mode control layers reduce the optical field intensity in contact layers, reducing optical absorption. In one embodiment, delamination features are included to inhibit the tendency of laterally oxidized mirrors from delaminating.

Abstract: An electro-optical device includes a vertical cavity surface emitting laser, a heterojunction light emitting device and heterojunction phototransistor on a semiconductor substrate. Layers of the heterojuncticn phototransistor and the heterojunction light-emitting device are electrically and optically coupled so there is regenerative optical and electrical feedback between them. Layers of the heterojunction light-emitting devices are proton implanted to control the feedback. Plural such devices are electrically and optically coupled together to perform logic functions, such as EXCLUSIVE OR, in response to optical signals.

Abstract: The present invention pertains to electronically controlled optical switching and interconnection arrangements enabling generation and processing of optical pulses including rerouting, serializing, modulation, and other processing or transformation of such pulses.

Abstract: An electro-optical device includes a vertical cavity surface emitting laser, a heterojunction light emitting device and heterojunction phototransistor on a semiconductor substrate. Layers of the heterojunction phototransistor and the heterojunction light-emitting device are electrically and optically coupled so there is regenerative optical and electrical feedback between them. Layers of the heterojunction light-emitting devices are proton implanted to control the feedback. Plural such devices are electrically and optically coupled together to perform logic functions, such as EXCLUSIVE OR, in response to optical signals.

Abstract: An electro-optical device includes a vertical cavity surface emitting laser a heterojunction light emitting device and heterojunction phototransistor on a semiconductor substrate. Layers of the heterojunction phototransistor and the heterojunction light-emitting device are electrically and optically coupled so there is regenerative optical and electrical feedback between them. Layers of the heterojunction light-emitting devices are proton implanted to control the feedback. Plural such devices are electrically and optically coupled together to perform logic functions, such as EXCLUSIVE OR, in response to optical signals.

Abstract: Junction field effect transistors are described with unusually short gates and a self-aligned structure which permits close approach of the source and drain electrodes to the p-n junction. Such devices have high speed, high gain and are usefully combined with other field effect transistors in integrated circuits.

Abstract: An integrated photodetector-amplifier is described which is planar and exhibits excellent circuit characteristics including low input capacitance, high speed, and high sensitivity. Also, certain self-alignment features and a planar technology made fabrication of the circuits simpler and easier than most such circuits.

Abstract: Various integrated device structures are described which incorporate novel substrate materials and channel confinement schemes. For example, devices are described for p-type substrates and novel buffer layers. Such substrates are easier to grow and provide good isolation and low-trap density at the interface between substrate and buffer layer.