Abstract: An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to a front side of the substrate, opposite the back side of the substrate.

Abstract: A heater assembly that that is effective at maintaining heating lamps at acceptable temperatures is disclosed. The heater assembly utilizes radiative heat transfer to transfer unwanted heat buildup in the heating lamps to a cooling base. One or more high emissivity films are disposed between the heating lamps and the cooling base to facilitate heat transfer. Further, a reflective coating is applied to a portion of the heating lamps to reflect heat away from the cooling base. The heater assembly may be utilized in a high vacuum environment as it does not rely on convective cooling.

Abstract: An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy, equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to the back side of the substrate.

Abstract: A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

Abstract: An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy, equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to the back side of the substrate.

Abstract: An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to a front side of the substrate, opposite the back side of the substrate.

Abstract: A method may include providing a substrate on a clamp, and directing radiation from an illumination source to the substrate when the substrate is disposed on the clamp during substrate processing, wherein the radiation is characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

Abstract: A method may include providing a substrate in a process chamber, directing radiation from an illumination source to the substrate when the substrate is disposed in the process chamber, and processing the substrate by providing a processing species to the substrate, separate from the radiation, when the substrate is disposed in the process chamber. As such, the radiation may be characterized by a radiation energy, wherein at least a portion of the radiation energy is equal to or greater than 2.5 eV.

Abstract: A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.

Abstract: A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.

Abstract: A substrate assembly may include a substrate base; and a low emission implantation mask, disposed on the substrate base. The low emission implantation mask may include a carbon-containing material, the carbon-containing material comprising an isotopically purified carbon, formed from a 12C carbon isotope precursor.

Abstract: A heating system for heating a substrate. The heating system may include a susceptor, where the susceptor has a substrate support surface. The heating system may further include a heat transfer layer, disposed on the substrate support surface, where the heat transfer layer comprising an array of aligned carbon nanotubes.

Abstract: A system and method for reduced workpiece adhesion during removal from a semiconductor processing station. The system provides an electrostatic charge detector that measures the residual charge on an electrostatically clamped workpiece prior to removal from a processing station inside the semiconductor processing tool. One embodiment uses an algorithm that to predict when to remove the workpiece without electrostatic adhesion based upon the decay rate of the residual electrostatic charge (Q) on the workpiece. Other embodiments also provide for a processing station static charge buildup health check and an excessive static charge check on incoming workpieces.

Abstract: An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12C layer, the 12C layer having an outer surface, facing the cavity.

Abstract: An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12C layer, the 12C layer having a first thickness, ranging between 1 mm to 5 mm.

Abstract: An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12C layer, the 12C layer having an outer surface, facing the cavity.

Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).

Abstract: An apparatus to support a substrate may include a base and an insulator portion adjacent to the base and configured to support a surface of the substrate. The apparatus may also include an electrode system to apply a clamping voltage to the substrate, wherein the insulator portion is configured to provide a gas to the substrate through at least one channel that has a channel width, wherein a product of the gas pressure and channel width is less than a Paschen minimum for the gas, where the Paschen minimum is a product of pressure and separation of surfaces of an enclosure at which a breakdown voltage of the gas is a minimum.

Abstract: A system and method for reduced workpiece adhesion during removal from a semiconductor processing station. The system provides an electrostatic charge detector that measures the residual charge on an electrostatically clamped workpiece prior to removal from a processing station inside the semiconductor processing tool. One embodiment uses an algorithm that to predict when to remove the workpiece without electrostatic adhesion based upon the decay rate of the residual electrostatic charge (Q) on the workpiece. Other embodiments also provide for a processing station static charge buildup health check and an excessive static charge check on incoming workpieces.

Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).