Abstract: What is specified is a method for producing a coating comprising the following steps: —providing a material source having a top surface and a main coating direction, —providing a substrate holder having a top surface, —providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, —attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, —setting the length of the rotating arm in such a manner that a normal angle (?) throughout the method is at least 30° and at most 75°, —applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.

Abstract: The invention relates to an optoelectronic component. The component includes a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. The adhesion layer comprises a titanium oxide, wherein in the titanium oxide the oxygen has the oxidation state W0, with W0=?2, and the titanium has the oxidation state WT, with 0 <WT<+4.

Abstract: An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.

Abstract: The invention relates to an optoelectronic component. The component comprises a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. The adhesion layer comprises a titanium oxide, wherein in the titanium oxide the oxygen has the oxidation state WO, with WO=?2, and the titanium has the oxidation state WT, with 0<WT<+4.

Abstract: An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.

Abstract: What is specified is a method for producing a coating comprising the following steps: —providing a material source having a top surface and a main coating direction, —providing a substrate holder having a top surface, —providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, —attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, —setting the length of the rotating arm in such a manner that a normal angle (?) throughout the method is at least 30° and at most 75°, —applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.

Abstract: What is specified is a method for producing a coating comprising the following steps: —providing a material source having a top surface and a main coating direction, —providing a substrate holder having a top surface, —providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, —attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, —setting the length of the rotating arm in such a manner that a normal angle (?) throughout the method is at least 30° and at most 75°, —applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.

Abstract: What is specified is a method for producing a coating comprising the following steps:—providing a material source having a top surface and a main coating direction,—providing a substrate holder having a top surface,—providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate,—attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm,—setting the length of the rotating arm in such a manner that a normal angle (?) throughout the method is at least 30° and at most 75°,—applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.