Patents by Inventor Julian PRIES

Julian PRIES has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase-change memory
    Patent number: 11817146
    Abstract: A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: November 14, 2023
    Assignee: Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
    Inventors: Shuai Wei, Matthias Wuttig, Yudong Cheng, Julian Pries, Xiaoling Lu
  • Phase-change memory
    Publication number: 20220215878
    Abstract: A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).
    Type: Application
    Filed: April 21, 2020
    Publication date: July 7, 2022
    Applicant: Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
    Inventors: Shuai WEI, Matthias WUTTIG, Yudong CHENG, Julian PRIES, Xiaoling LU