Patents by Inventor Julian SASAKI

Julian SASAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SOT reader using BiSb topological insulator
    Patent number: 11875827
    Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.
    Type: Grant
    Filed: March 25, 2022
    Date of Patent: January 16, 2024
    Assignee: Western Digital Technologies, Inc.
    Inventors: Quang Le, Brian R. York, Xiaoyong Liu, Son T. Le, Cherngye Hwang, Michael A. Gribelyuk, Xiaoyu Xu, Kuok San Ho, Hisashi Takano, Julian Sasaki, Huy H. Ho, Khang H. D. Nguyen, Nam Hai Pham
  • SOT Reader Using BiSb Topological Insulator
    Publication number: 20230306993
    Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.
    Type: Application
    Filed: March 25, 2022
    Publication date: September 28, 2023
    Inventors: Quang LE, Brian R. YORK, Xiaoyong LIU, Son T. LE, Cherngye HWANG, Michael A. GRIBELYUK, Xiaoyu XU, Kuok San HO, Hisashi TAKANO, Julian SASAKI, Huy H. HO, Khang H. D. NGUYEN, Nam Hai PHAM