Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: A conversion element, a radiation-emitting semiconductor device and a method for producing a conversion element are disclosed. In an embodiment a conversion element includes a ceramic luminescent material and a flux material, wherein the flux material has a boiling temperature above 1500° C. and/or a melting temperature below 1500° C., and wherein the flux material has a concentration in the conversion element between at least 0.01 wt % and at most 1 wt %.

Abstract: A method is provided for producing a pulverulent precursor material of the general formula M1xM2y(Si,Al)12(O,N)16 or M12-zM2zSi8Al4N16 having the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m2/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.

Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0?b?1 and 0?c? and 0?d?1 and 0?e?1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Abstract: A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1?y) AlSiN3:X1 II:(CabSraLi1?a?b) AISi (N1?cFc)3:X2 III: Z5??Al4?2?Si8+2?N18: X3 IV: (Zi?dLid)5??Al4?2?Si8+2?(N1?XFX)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.

Abstract: A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0?b?1 and 0?c? and 0?d?1 and 0?e?1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Abstract: A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1-y)AlSiN3:X1 II: (CabSraLi1-a-b)AlSi(N1-cFc)3:X2 III: Z5-?Al4-2?Si8+2?N18: X3 IV: (Zi-dLid)5-?Al4-2?Si8+2?(N1-xFx)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.

Abstract: A method is provided for producing a pulverulent precursor material of the general formula M1xM2y(Si,Al)12(O,N)16 or M12-zM2zSi8Al4N16 having the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m2/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.