Abstract: This disclosure concerns optoelectronic transceivers. In one example, a transceiver is implemented as an uncompensated architecture that is substantially compliant with the SFP MSA and is capable of effective operation at a data rate of about 8.5 Gb/s. The transceiver includes a TOSA, ROSA, a printed circuit board, an LDPA disposed on the printed circuit board and configured for communication with the TOSA and the ROSA. Finally, the transceiver includes SFP compliant optical and electrical connections.

Abstract: A package for maintaining alignment of components includes a frame and a beam with the beam attached to the frame and one end of the beam. One or more components are mounted to the beam. The frame and a portion of the beam are separated from each other by a channel which allows portions of the beam to flex substantially independently of the frame when a force is applied to the frame. Thus, the effects resulting from forces applied to the frame are not experienced by the beam, or are at least attenuated, so that the alignment of the components mounted on the beam is substantially preserved.

Abstract: A transmit optical subassembly (TOSA) includes a spot-size-converted (SSC) semiconductor laser coupled to an optical fiber without a lens or isolator. The spot-size-converted semiconductor laser includes an active region and an expander region that expands the spot size of the laser while maintaining efficient active laser performance. The SSC laser is coupled to a submount and passively aligned to an optical fiber positioned within a V-shaped groove formed within the submount. The SSC laser includes a narrow far field advantageous for providing a high coupling efficiency and high quality data transmission. The SSC laser is resistant to back reflection and produces a 1.3 or 1.55 micron optical wavelength and a data rate ranging from 1 to 10 Gbps. The TOSA provides high coupled power due to narrow far field, with potential extra reflection resistance due to absorption and mode transfer losses in coupling reflections through the expander back into the active region.

Abstract: The invention is a semiconductor optical device and a method of manufacture. The device includes a first waveguide having an edge, and a second waveguide adjacent to at least a portion of the first waveguide including the edge so that light is coupled from the first to the second waveguide. The second waveguide has a modal index which is essentially constant at least at the edge of the first waveguide. The method includes forming at least the second waveguide by Selective Area Growth (SAG) using oxide pads of a particular geometry to achieve the essentially constant modal index. In one embodiment, the device is an expanded beam laser with an expander portion which is less than 300 microns.

Abstract: The invention is a method of fabricating a semiconductor device involving selectively etching at least a first semiconductor layer on a semiconductor wafer so as to perform a lateral taper etch in said layer, forming a second layer over the resulting etched region so as to planarize the etched area, and subsequently performing a second etch over a portion of the etched region so as to form a mesa geometry. This material allows device fabrication with a lateral taper, beneficial to monolithic integration of devices, such as expanded beam lasers, while reducing or eliminating unwanted increases in mesa width (mesa bulge) resulting from the lateral taper.