Abstract: The invention relates to a neural network comprising: synaptic chains, each synaptic chain comprising synapses, each synapse being a spintronic resonator, the spintronic resonators being in series, each spintronic resonator having an adjustable resonance frequency, ordered layers of neurons, each neuron being a radiofrequency oscillator oscillating at its own frequency, a lower layer being connected to an upper layer by an interconnection comprising an assembly of synaptic chains connected to rectifying circuits, each resonance frequency of the assembly of synaptic chains corresponding to the frequency of a radiofrequency oscillator of the lower layer.

Abstract: A neuromorphic circuit implementing a spiking neural network and including bidirectional synapses made by a set of memristors arranged in an array, neurons firing spikes at a variable rate and connected to neurons via a synapse, and a neural network training module including, for at least one bidirectional synapse, an estimation unit obtaining an estimation of the time derivative of the spike rate of each neuron, an interconnection having at least two positions between the synapse and each neuron, and a controller sending a control signal to the interconnection after a spike, the signal changing the position of the interconnection, so as to connect the estimation unit and the synapse.

Abstract: The present invention relates to a neuromimetic network comprising a set of neurons and a set of synapses, at least one neuron comprising a first stack of superimposed layers, the first stack successively comprising: a first electrode, a first barrier layer made of an electrically insulating material, and a second electrode, the first electrode, the first barrier layer and the second electrode forming a first ferroelectric tunnel junction, at least one synapse comprising a second stack of superimposed layers, the second stack successively comprising: a third electrode, a second barrier layer made of an electrically insulating material, and a fourth electrode, the third electrode, the second barrier layer and the fourth electrode forming a second ferroelectric tunnel junction.

Abstract: The invention relates to a neural network comprising: synaptic chains, each synaptic chain comprising synapses, each synapse being a spintronic resonator, the spintronic resonators being in series, each spintronic resonator having an adjustable resonance frequency, ordered layers of neurons, each neuron being a radiofrequency oscillator oscillating at its own frequency, a lower layer being connected to an upper layer by an interconnection comprising an assembly of synaptic chains connected to rectifying circuits, each resonance frequency of the assembly of synaptic chains corresponding to the frequency of a radiofrequency oscillator of the lower layer.

Abstract: A device for generating a random electric signal, including an input duct, an output duct, a generator of magnetic particles generating magnetic particles in the input duct, a diffusion chamber connected to the input duct and the output duct, wherein the diffusion chamber is designed to diffuse the generated magnetic particles, a displacement unit for displacement of the generated magnetic particles towards the diffusion chamber, and a converter that is designed to generate an electrical signal proportional to a characteristic, wherein the characteristic is the particle density in the diffusion chamber or the passage of magnetic particles at a predetermined location of an output duct connected to the diffusion chamber.

Abstract: The invention relates to a synaptic chain of neural networks, the synaptic chain comprising synapses, each synapse being a spintronic resonator, the spintronic resonators being electrically connected in series by a transmission line and being alternately connected.

Abstract: The present invention relates to a neuromimetic network comprising a set of neurons and a set of synapses, at least one neuron comprising a first stack of superimposed layers, the first stack successive1y comprising: a first electrode, a first barrier layer made of an electrically insulating material, and a second electrode, the first electrode, the first barrier layer and the second electrode forming a first ferroelectric tunnel junction, at least one synapse comprising a second stack of superimposed layers, the second stack successive1y comprising: a third electrode, a second barrier layer made of an electrically insulating material, and a fourth electrode, the third electrode, the second barrier layer and the fourth electrode forming a second ferroelectric tunnel junction.

Abstract: Disclosed is a modular stochastic machine capable of carrying out probability calculations and including: at least one stochastic distribution module corresponding to a plurality of random variables and capable of receiving an input of values of specified variables in order to return, as output, a representation of the distribution of at least one non-specified variable determined by the values of the specified variables; and at least two stochastic variable modules each corresponding to a single random variable and including: both a stochastic multiplier capable of receiving, as input, representations of distributions in order to return, as output, a representation of the product distribution, as well as a stochastic proportional normalizer capable of receiving, as input, a representation of a distribution in order to return, as output, a proportionally normalized representation.

Abstract: A device for generating a random electric signal, including an input duct, an output duct, a generator of magnetic particles generating magnetic particles in the input duct, a diffusion chamber connected to the input duct and the output duct, wherein the diffusion chamber is designed to diffuse the generated magnetic particles, a displacement unit for displacement of the generated magnetic particles towards the diffusion chamber, and a converter that is designed to generate an electrical signal proportional to a characteristic, wherein the characteristic is the particle density in the diffusion chamber or the passage of magnetic particles at a predetermined location of an output duct connected to the diffusion chamber.

Abstract: This circuit includes a random network, said random network including: nodes, each node being formed with a pad forming an electric contact borne on a face of a substrate; and links between nodes, each link being formed with at least one unidimensional nanometric object with variable and non-volatile resistance having a configured resistance subsequently to the application of a suitable stimulus between at least one pair of pads connected through said link.

Abstract: An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.

Abstract: This circuit includes a random network, said random network including: nodes, each node being formed with a pad forming an electric contact borne on a face of a substrate; and links between nodes, each link being formed with at least one unidimensional nanometric object with variable and non-volatile resistance having a configured resistance subsequently to the application of a suitable stimulus between at least one pair of pads connected through said link.

Abstract: A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Abstract: An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.

Abstract: A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Abstract: The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Abstract: The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Abstract: The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.

Abstract: The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.