Patents by Inventor Julien Bailat
Julien Bailat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11966201Abstract: A photovoltaic device includes an electrically-conductive front contact layer; an electrically-conductive back contact layer, the back contact layer being intended to be situated further from a source of incident light than the front contact layer; and a semiconductor-based PIN junction having a substantially amorphous intrinsic silicon layer sandwiched between a P-type doped semiconductor layer and an N-type doped semiconductor layer. The layer of the PIN junction situated closest to the back contact layer is a silicon-germanium alloy layer including at least 2 mol % of germanium.Type: GrantFiled: February 21, 2020Date of Patent: April 23, 2024Assignee: Nivarox-FAR S.A.Inventors: Julien Bailat, Elisa Favre, Jan-Willem Schüttauf
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Publication number: 20220171103Abstract: Black-coloured article (1) which is not a photovoltaic device, comprising:—a substantially transparent substrate (3);—a substantially transparent textured layer (5) provided upon a first surface (3a) of said substrate, said textured layer (5) having a textured surface (5a) oriented away from said substrate (3);—an absorption layer (7) comprising silicon-germanium alloy, said absorption layer (7) being situated upon said textured surface (5a) of said textured layer (5).Type: ApplicationFiled: February 21, 2020Publication date: June 2, 2022Applicant: Nivarox-FAR S.A.Inventors: Julien BAILAT, Elisa FAVRE
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Publication number: 20220004149Abstract: A photovoltaic device includes an electrically-conductive front contact layer; an electrically-conductive back contact layer, the back contact layer being intended to be situated further from a source of incident light than the front contact layer; and a semiconductor-based PIN junction having a substantially amorphous intrinsic silicon layer sandwiched between a P-type doped semiconductor layer and an N-type doped semiconductor layer. The layer of the PIN junction situated closest to the back contact layer is a silicon-germanium alloy layer including at least 2 mol % of germanium.Type: ApplicationFiled: February 21, 2020Publication date: January 6, 2022Applicant: Nivarox-FAR S.A.Inventors: Julien BAILAT, Elisa FAVRE, Jan-Willem SCHÜTTAUF
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Patent number: 8846434Abstract: A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a ?c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.Type: GrantFiled: September 17, 2010Date of Patent: September 30, 2014Assignee: Tel Solar AGInventors: Evelyne Vallat-Sauvain, Daniel Borrello, Julien Bailat, Johannes Meier, Ulrich Kroll, Stefano Benagli, Castens Lucie, Giovanni Monteduro, Miguel Marmelo, Jochen Hoetzel, Yassine Djeridane, Jerome Steinhauser, Jean-Baptiste Orhan
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Patent number: 8723020Abstract: The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.Type: GrantFiled: February 13, 2007Date of Patent: May 13, 2014Assignee: Universite de NeuchatelInventors: Julien Bailat, Christophe Ballif, Didier Domine
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Publication number: 20130340817Abstract: Solar cells or solar modules of the so-called tandem type, i.e. stacked arrangements of photovoltaic absorber devices on a substrate with a textured surface are described. The thin film solar cell has a substrate comprising a textured surface, and a front electrode layer comprising a transparent conductive oxide adjacent to the textured surface, wherein the electrode layer has a thickness less than the roughness of the textured surface.Type: ApplicationFiled: September 1, 2011Publication date: December 26, 2013Applicants: OERLIKON SOLAR AG, TRUBBACH, CORNING INCORPORATEDInventors: Julien Bailat, Karl William Koch, III, Glenn Eric Kohnke, Sasha Marjanovic, Johannes Meier
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Patent number: 8368122Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.Type: GrantFiled: November 18, 2009Date of Patent: February 5, 2013Assignee: Universite de NeuchatelInventors: Didier Domine, Peter Cuony, Julien Bailat
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Publication number: 20120227799Abstract: A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a ?c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.Type: ApplicationFiled: September 17, 2010Publication date: September 13, 2012Applicant: OERLIKON SOLAR AG, TRUEBBACHInventors: Evelyne Vallat-Sauvain, Daniel Borrello, Julien Bailat, Johannes Meier, Ulrich Kroll, Stefano Benagli, Castens Lucie, Giovanni Monteduro, Miguel Marmelo, Jochen Hoetzel, Yassine Djeridane, Jerome Steinhauser, Jean-Baptiste Orhan
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Publication number: 20110259410Abstract: A thin-film tandem photovoltaic cell comprises on a glass substrate a front TCO (3), an amorphous silicon cell as top cell (5), a semi-transparent reflector layer (7), a microcrystalline silicon bottom cell (9). Thereby, the semi-transparent reflector layer (7) is of n-doped silicon oxide with an index of refraction below 1.7. The thickness of the amorphous silicon top cell (5) is below 200 nm.Type: ApplicationFiled: January 18, 2010Publication date: October 27, 2011Applicant: OERLIKON SOLAR AG, TRUEBBACHInventors: Julien Bailat, Castens Lucie
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Publication number: 20110260164Abstract: A multiple-junction photoelectric device includes a substrate with a first conducting layer thereon, at least two elementary photoelectric devices of p-i-n or p-n configuration, with a second conducting layer thereon, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, opposite top and bottom faces, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so ?90bottom is smaller than ?90top by at least 3°, preferably 6°, more preferably 10°, and even more preferably 15°; where ?90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination equal to or less than this angle, and ?90bottom is the angle for which 90% of the elementary surfaces of the bottom face of the intermediate layer have an inclination equal to or less than this angle.Type: ApplicationFiled: November 18, 2009Publication date: October 27, 2011Applicant: UNIVERSITE DE NEUCHATELInventors: Didier Domine, Peter Cuony, Julien Bailat
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Publication number: 20110240107Abstract: Micromorph tandem cells with stabilized efficiencies of 11.0% have been achieved on as-grown LPCVD ZnO front TCO at bottom cell thickness of just 1.3 ?m in combination with an antireflection concept. Applying an advanced LPCVD ZnO front TCO stabilized tandem cells of 10.6% have been realized at a bottom cell thickness of only 0.8 ?m. Implementing intermediate reflectors in Micromorph tandem cell devices allow for, compared to commercial SnO2, reduced optical losses when LPCVD ZnO is used. At present highest stabilized cell efficiency reached 11.3% incorporating an in-situ intermediate reflector with a bottom cell thickness of 1.6 ?m.Type: ApplicationFiled: April 4, 2011Publication date: October 6, 2011Applicant: OERLIKON SOLAR AG, TRUBBACHInventors: Johannes Meier, Stefano Benagli, Julien Bailat, Daniel Borrello, Jerome Steinhauser, Jochen Hötzel, Lucie Castens, Jean-Baptiste Orhan, Yassine Djeridane, Evelyne Vallat-Sauvain, Ulrich Kroll
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Publication number: 20110030760Abstract: The photovoltaic device comprises a substrate, deposited on said substrate, a first contact layer; a second contact layer; between said first and second contact layers: a first layer stack comprising a first p-doped layer, a first at least substantially intrinsic layer of amorphous hydrogenated silicon and a first n-doped layer; a second layer stack comprising a second p-doped layer, a second at least substantially intrinsic layer of microcrystalline hydrogenated silicon and a second n-doped layer. The thickness of the first at least substantially intrinsic layer is between 160 nm and 400 nm, and the thickness of the second at least substantially intrinsic layer is between 1 ?m and 2 ?m.Type: ApplicationFiled: April 17, 2009Publication date: February 10, 2011Applicant: OERLIKON TRADING AG, TRUEBBACHInventors: Johannes Meier, Ulrich Kroll, Julien Bailat
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Publication number: 20100126575Abstract: The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.Type: ApplicationFiled: February 13, 2007Publication date: May 27, 2010Applicant: UNIVERSITE DE NEUCHATELInventors: Julien Bailat, Christophe Ballif, Didier Domine