Abstract: The present invention relates to a housing (1) for a heating, air-conditioning and/or ventilation device for a motor vehicle, configured to receive an air filter (3), said air filter (3) comprising a first filtering medium (30) which is delimited by at least two primary frame strips (300) and a second filtering medium (31) which is delimited by at least two secondary frame strips (310), according to which said housing (1) comprises at least one maintenance device (100) which is configured to retain one of said primary frame strips (300) when said first filtering medium (10) is mounted in said housing (1).

Abstract: A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.

Abstract: A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.

Abstract: The present invention concerns an air pulser (1) for a heating, ventilation and/or air conditioning device for a motor vehicle, according to which said air pulser (1) comprises: —an electric motor (10) comprising a drive shaft (100) and brushes (101) on which a wheel (11) is mounted; —said wheel (11) is capable of generating a main air flow (F1) in said heating, ventilation and/or air conditioning device; —a motor support (12) in which said electric motor (10) is housed and comprising an air channel (8) in which a secondary air flow (F2) from said main air flow (F1) is capable of circulating (F1), said air channel (8) comprising a first part (129) and a second part (144), said second part (144) comprising a curved shape so as to direct said secondary air flow (F2) onto said brushes (101) of said electric motor (10).

Abstract: The invention relates to an apparatus (1) for thermally conditioning an air flow for a motor vehicle, comprising at least one heat exchanger, an air blower (4) adapted for blowing a pressurised air flow to said exchanger, a conditioning housing (5) adapted for directing the pressurised air from said blower (4) to said heat exchanger, and at least one outlet for distributing the conditioned air in the passenger compartment of said vehicle, said apparatus (1) being characterised in that it comprises at least one wall (8) formed from a porous material.

Abstract: A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.

Abstract: A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.

Abstract: The invention relates to a heating, ventilation and/or air-conditioning device (1) for a motor vehicle, characterised in that it comprises at least one first air circulation channel (3), at least one second air circulation channel (4), and means (5, 6) for generating an air stream in the first air circulation channel (3) and/or in the second air circulation cannel (4), the device (1) also comprising means for the inflow of a cleaning product (13, 16) ending in the first air circulation channel (3) and/or in the second air circulation channel (4).

Abstract: A Light-emitting device comprises a monolithic matrix of III-nitride elements, the matrix comprising at least one first stack of quantum wells or of planes of quantum dots able to emit photons at at least one second wavelength by optical pumping by the photons emitted by the first stack, and a region separating the two stacks, and first and second electrodes arranged to allow an electrical current to pass through the stacks, the second stack is n-doped, the separating region comprises a tunnel junction having an n++-doped region arranged on the same side as the second stack and a p++-doped region arranged on the opposite side and the first stack is arranged between separating region and at least one n-doped layer. Method for manufacturing such device.

Abstract: A method of treating a solid lignocellulosic material (10) in which the solid lignocellulosic material (10) is subjected to a treatment, called a mechano-chemical treatment (1), of mixing and chemical degradation of the solid lignocellulosic material (10) so as to form an intermediate composition having a hydrated lignocellulosic material whose enzymatic digestibility is increased relative to the digestibility of the solid lignocellulosic starting material (10), then; the hydrated lignocellulosic material is subjected to a treatment, called a mechano-chemical treatment (2), in which a dispersion is formed, called an aqueous dispersion, of the hydrated lignocellulosic material (10) in an aqueous composition, the aqueous dispersion including at least one enzyme for degrading the hydrated lignocellulosic material (10).

Abstract: The invention relates to a process for protecting the surface of an SiC substrate. This process comprises deposition of a temporary protection layer with a thickness equal to at least two monolayers on the surface of the substrate to be protected, the protection layer being composed of gallium nitride. Advantageously, the protection layer of gallium nitride may be obtained by depositing gallium on the surface of the substrate, followed by nitridation of the gallium layer formed. The invention also relates to an “epiready” substrate. This substrate comprises an SiC substrate for which at least one surface is covered by a temporary protection layer, the said layer being composed of GaN and being two monolayers thick.

Abstract: The invention relates to a process for protecting the surface of an SiC substrate. This process comprises deposition of a temporary protection layer with a thickness equal to at least two monolayers on the surface of the substrate to be protected, the protection layer being composed of gallium nitride. Advantageously, the protection layer of gallium nitride may be obtained by depositing gallium on the surface of the substrate, followed by nitridation of the gallium layer formed. The invention also relates to an “epiready” substrate. This substrate comprises an SiC substrate for which at least one surface is covered by a temporary protection layer, the said layer being composed of GaN and being two monolayers thick.