Abstract: The invention relates to a light source comprising a photonic wire having a single-mode core and adapted to support an optical mode which is degenerate in polarization, comprising an emitter of a pair of photons which are intended to be entangled in polarization. The photonic wire comprises a cladding which is asymmetrical in rotation and extends along a principal transverse axis. Furthermore, the light source comprises a correction device adapted to induce by electrostatic effect a mechanical deformation of the photonic wire in a plane parallel to the substrate, along a deformation axis forming an angle of inclination of between 0° and 90°, these values being exclusive, with respect to the principal transverse axis, the mechanical deformation leading to mechanical strains experienced by the emitter, thus improving the degree of entanglement of the photon pair.

Abstract: A single-photon source including a monomode photonic wire wherein a single-photon emitter is located, the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis, including a lower part resting in contact with a support substrate and including the single-photon emitter.

Abstract: The invention relates to a light source 1 comprising a photonic wire 20 having a single-mode core 21 and adapted to support an optical mode which is degenerate in polarization, comprising an emitter 24 of a pair of photons which are intended to be entangled in polarization. The photonic wire 20 comprises a cladding 25 which is asymmetrical in rotation and extends along a principal transverse axis Atg. Furthermore, the light source 1 comprises a correction device 50 adapted to induce by electrostatic effect a mechanical deformation of the photonic wire 20 in a plane parallel to the substrate 10, along a deformation axis Ad forming an angle of inclination of between 0° and 90°, these values being exclusive, with respect to the principal transverse axis Atg, the mechanical deformation leading to mechanical strains experienced by the emitter 24, thus improving the degree of entanglement of the photon pair.

Abstract: A single-photon source including a monomode photonic wire wherein a single-photon emitter is located, the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis, including a lower part resting in contact with a support substrate and including the single-photon emitter.

Abstract: The optoelectronic arrangement comprises a semiconductor nanowire intended to participate in the processing, notably in a reception and/or an emission, of a light concerned and a mirror reflecting the light concerned. The semiconductor nanowire comprises a first section and a second section, and the mirror surrounds, at least longitudinally, the first section of the semiconductor nanowire, said second section extending out of the mirror.

Abstract: The present invention relates to a single photon source 1800 comprising a tapered nanowire 1802, where the nanowire 1802 is made of a semiconductor material, a first electrode 1828 and second electrode 1814, where the electrodes are electrically coupled to a photon emitter 1804 embedded in the nanowire 1802 and wherein the photon emitter 1804 is capable of emitting a single photon when an activation voltage is applied between the electrodes. In advantageous embodiments of the invention, the nanowire is encircled by air or vacuum, such that advantage can be taken of the resultant large ratio between a refractive index of the nanowire and the encircling material, air. Another advantageous feature might be that the first and second electrodes are optically transparent, such that they can be used as part of a reflective element or anti-reflective element.

Abstract: A laser device for emitting THz waves includes a heterostructure with a substantially cylindrical shape including a first layer in an optically nonlinear semiconductor material including emitters to emit in two whispering gallery modes that are confined in the first layer and enabling the generation within the first layer of radiation in an electromagnetic THz whispering gallery mode, a second and a third layer in a semiconductor material each presenting an optical index that is smaller than the index of the material used for the first layer and a metal layer situated at one end of the heterostructure. The heterostructure includes in its center a hole with a substantially cylindrical shape extending over the entire height of the heterostructure.

Abstract: The optoelectronic arrangement comprises a semiconductor nanowire intended to participate in the processing, notably in a reception and/or an emission, of a light concerned and a mirror reflecting the light concerned. The semiconductor nanowire comprises a first section and a second section, and the mirror surrounds, at least longitudinally, the first section of the semiconductor nanowire, said second section extending out of the mirror.

Abstract: A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.

Abstract: A laser device for emitting THz waves includes a heterostructure with a substantially cylindrical shape including a first layer in an optically nonlinear semiconductor material including emitters to emit in two whispering gallery modes that are confined in the first layer and enabling the generation within the first layer of radiation in an electromagnetic THz whispering gallery mode, a second and a third layer in a semiconductor material each presenting an optical index that is smaller than the index of the material used for the first layer and a metal layer situated at one end of the heterostructure. The heterostructure includes in its center a hole with a substantially cylindrical shape extending over the entire height of the heterostructure.

Abstract: The present invention relates to a single photon source 1800 comprising a tapered nanowire 1802, where the nanowire 1802 is made of a semiconductor material, a first electrode 1828 and second electrode 1814, where the electrodes are electrically coupled to a photon emitter 1804 embedded in the nanowire 1802 and wherein the photon emitter 1804 is capable of emitting a single photon when an activation voltage is applied between the electrodes. In advantageous embodiments of the invention, the nanowire is encircled by air or vacuum, such that advantage can be taken of the resultant large ratio between a refractive index of the nanowire and the encircling material, air. Another advantageous feature might be that the first and second electrodes are optically transparent, such that they can be used as part of a reflective element or anti-reflective element.

Abstract: A laser device having a wave emission within a frequency range of 0.5 to 5 THz, includes a semiconductor heterostructure having a cylindrical form with a circular cross-section and including: a first optically nonlinear semiconductor material layer including an emitting medium configured to emit at least two optical whispering gallery modes belonging to the near-infrared spectrum, the two whispering gallery modes being confined within the first layer and enabling the generation, within the first layer, of radiation within an electromagnetic whispering gallery mode having a frequency of 0.