Patents by Inventor Julien DELCHEVALRIE

Julien DELCHEVALRIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Treatment of a thin film by hydrogen plasma and polarisation in order to improve the crystalline quality thereof
    Patent number: 11898239
    Abstract: Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: February 13, 2024
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Julien Delchevalrie, Jean-Charles Arnault, Samuel Saada, Romain Bachelet
  • TREATMENT OF A THIN FILM BY HYDROGEN PLASMA AND POLARISATION IN ORDER TO IMPROVE THE CRYSTALLINE QUALITY THEREOF
    Publication number: 20220325405
    Abstract: Methods for treating a thin film made from a conductive or semiconductive material may improve the crystalline quality thereof. Such methods may include: supplying a substrate including, on one of the faces thereof, a thin film of the material; and biased plasma treating the assembly formed by the substrate and the thin film at a given temperature and for a given time, so as to obtain a crystalline reorganization over a depth of the thin film, the biased plasma treatment including an electrical biasing of the thin film and an exposure of the film thus biased to a hydrogen plasma, the biased plasma treatment being implemented at a temperature that is below the melting points of the thin film and of the substrate.
    Type: Application
    Filed: September 11, 2020
    Publication date: October 13, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Julien DELCHEVALRIE, Jean-Charles ARNAULT, Samuel SAADA, Romain BACHELET