Abstract: A method for manufacturing first and second transistors on a semiconductor substrate includes: depositing an interface layer on the semiconductor substrate; depositing a gate insulator layer on the interface layer; depositing a first ferroelectric layer on the gate insulator layer over a first region for the first transistor; depositing a metal gate layer on the gate insulator layer over a second region for the second transistor and on the first ferroelectric layer over the first region for the first transistor; and patterning the metal gate layer, first ferroelectric layer, gate insulator layer and interface layer to form a first gate stack for the first transistor which includes the metal gate layer, first ferroelectric layer, gate insulator layer and interface layer and a second gate stack for the second transistor which includes the metal gate layer, gate insulator layer and interface layer.

Abstract: A method for manufacturing first and second transistors on a semiconductor substrate includes: depositing an interface layer on the semiconductor substrate; depositing a gate insulator layer on the interface layer; depositing a first ferroelectric layer on the gate insulator layer over a first region for the first transistor; depositing a metal gate layer on the gate insulator layer over a second region for the second transistor and on the first ferroelectric layer over the first region for the first transistor; and patterning the metal gate layer, first ferroelectric layer, gate insulator layer and interface layer to form a first gate stack for the first transistor which includes the metal gate layer, first ferroelectric layer, gate insulator layer and interface layer and a second gate stack for the second transistor which includes the metal gate layer, gate insulator layer and interface layer.

Abstract: A ferroelectric field effect transistor includes a semiconductor substrate, with first and second source/drain regions being formed within the semiconductor substrate and being separated by a channel region. An interface layer is disposed on the channel region. A gate insulator layer is disposed on the interface layer. A ferroelectric layer is disposed on the gate insulator layer.

Abstract: A ferroelectric field effect transistor includes a semiconductor substrate, with first and second source/drain regions being formed within the semiconductor substrate and being separated by a channel region. An interface layer is disposed on the channel region. A gate insulator layer is disposed on the interface layer. A ferroelectric layer is disposed on the gate insulator layer.

Abstract: A device for assisting with the detection of a sought object on the ground, said object having a first preset height, comprising: a display device configured to display an image (12) generated from echoes measured by a device for imaging reflected waves, the image (12) representing the intensities of echoes generated by the observed zone and extending at least along a distance axis (d) representing the oblique distances separating the reflected-wave imaging device from echo-generating reflectors, the display device allowing a cursor (14) to be displayed superposed on said image on said screen; and a computational module configured to determine an expected length (w), along the distance axis (d), of an expected shadow (19, 20) projected in the image (12) by the sought object assuming that the sought object is positioned at a sighted position on the ground corresponding to the position of the observed zone associated with a position (P) designated by the cursor (14), the cursor (14) comprising at least one g

Abstract: A device for assisting with the detection of a sought object on the ground, said object having a first preset height, comprising: a display device configured to display an image (12) generated from echoes measured by a device for imaging reflected waves, the image (12) representing the intensities of echoes generated by the observed zone and extending at least along a distance axis (d) representing the oblique distances separating the reflected-wave imaging device from echo-generating reflectors, the display device allowing a cursor (14) to be displayed superposed on said image on said screen; and a computational module configured to determine an expected length (w), along the distance axis (d), of an expected shadow (19, 20) projected in the image (12) by the sought object assuming that the sought object is positioned at a sighted position on the ground corresponding to the position of the observed zone associated with a position (P) designated by the cursor (14), the cursor (14) comprising at least one g

Abstract: A method including carrying out, by means of an underwater vehicle moving above a given zone of the sea bed, observations on the basis of which the positions of elements of relief and of objects present on the bed are estimated. These observations are associated with fictitious objects, tied together by fictitious elastic links so as to constitute a fictitious elastic network. The network is in equilibrium as long as no action is exerted on one or the other of the fictitious objects constituting the network. The objects then occupy fixed positions, positions assigned to the corresponding observations. On the other hand, when two observations assumed to correspond to one and the same object are fused into a single observation, the two corresponding fictitious objects are brought closer together. This bringing closer together induces the appearance of stresses in the fictitious elastic network.

Abstract: A method including carrying out, by means of an underwater vehicle moving above a given zone of the sea bed, observations on the basis of which the positions of elements of relief and of objects present on the bed are estimated. These observations are associated with fictitious objects, tied together by fictitious elastic links so as to constitute a fictitious elastic network. The network is in equilibrium as long as no action is exerted on one or the other of the fictitious objects constituting the network. The objects then occupy fixed positions, positions assigned to the corresponding observations. On the other hand, when two observations assumed to correspond to one and the same object are fused into a single observation, the two corresponding fictitious objects are brought closer together. This bringing closer together induces the appearance of stresses in the fictitious elastic network.