Abstract: A device for magnetizing laser plasma by unit of a pulsed magnetic field, which includes: a laser source for emitting a laser pulse; a vacuum chamber in which a target capable of generating a laser plasma during an interaction of the laser pulse with the target is arranged; and a coil capable of generating a pulsed magnetic field in the laser plasma, the device being characterised in that the coil is arranged in a reentrant chamber containing a coolant.

Abstract: The invention relates to a method for generating a focused charged-particle beam, comprising at least the steps of: a) generating a charged-particle beam (10); b) emitting a laser pulse (40); c) generating a focusing magnetic field structure in a target (50) by means of an interaction between the laser pulse and the target; and d) making the charged-particle beam penetrate the focusing magnetic field structure at least partially.

Abstract: A device for magnetizing laser plasma by unit of a pulsed magnetic field, which includes: a laser source for emitting a laser pulse; a vacuum chamber in which a target capable of generating a laser plasma during an interaction of the laser pulse with the target is arranged; and a coil capable of generating a pulsed magnetic field in the laser plasma, the device being characterised in that the coil is arranged in a reentrant chamber containing a coolant.

Abstract: The invention relates to a method for generating a focused charged-particle beam, comprising at least the steps of: a) generating a charged-particle beam (10); b) emitting a laser pulse (40); c) generating a focusing magnetic field structure in a target (50) by means of an interaction between the laser pulse and the target; and d) making the charged-particle beam penetrate the focusing magnetic field structure at least partially.

Abstract: In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 ?m. In particular examples, the distance is less than about 1 ?m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

Abstract: In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 ?m. In particular examples, the distance is less than about 1 ?m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

Abstract: In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 ?m. In particular examples, the distance is less than about lam. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

Abstract: The present invention concerns a system for the focusing and/or a collimation of an ion beam, in particular a beam of accelerated protons, wherein the system has a lens with a lens body that is permeable to the ion beam, wherein means for the generation of an in particular electrostatic field, propagating within the lens body and focusing the ion beam, are provided, wherein the lens body has a wall of low thickness, wherein the means for the field generation comprise a source of electromagnetic radiation, whose emitted beam is directed onto the outer side of the wall of the lens body, wherein the thickness of the wall and the quality of the electromagnetic radiation is chosen such that the radiation generates free electrons that emerge from the wall and accumulate on the exit side of the wall in an electron cloud.

Abstract: The present invention concerns a system for the focusing and/or a collimation of an ion beam, in particular a beam of accelerated protons, wherein the system has a lens with a lens body that is permeable to the ion beam, wherein means for the generation of an in particular electrostatic field, propagating within the lens body and focusing the ion beam, are provided, wherein the lens body has a wall of low thickness, wherein the means for the field generation comprise a source of electromagnetic radiation, whose emitted beam is directed onto the outer side of the wall of the lens body, wherein the thickness of the wall and the quality of the electromagnetic radiation is chosen such that the radiation generates free electrons that emerge from the wall and accumulate on the exit side of the wall in an electron cloud.