Patents by Inventor Julien Gatineau

Julien Gatineau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200032397
    Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; p>1; each R is independently hydrogen or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and each L? is independently NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 30, 2020
    Inventors: Satoko GATINEAU, Daehyeon KIM, Wontae NOH, Julien GATINEAU, Jean-Marc GIRARD
  • Patent number: 10465289
    Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and each L? is independently NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: November 5, 2019
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude at l'Exploitation des Procédés Georges Claude
    Inventors: Satoko Gatineau, Daehyeon Kim, Wontae Noh, Julien Gatineau, Jean-Marc Girard
  • Publication number: 20190249305
    Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 15, 2019
    Inventors: Satoko GATINEAU, Wontae Noh, Daehyeon Kim, Julien Gatineau, Jean-Marc Girard
  • Patent number: 10364259
    Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4-[(ER2)2—NR]—, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group and adjacent R?s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: July 30, 2019
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Daehyeon Kim, Satoko Gatineau, Wontae Noh, Julien Gatineau, Jean-Marc Girard
  • Patent number: 10337104
    Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: July 2, 2019
    Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Satoko Gatineau, Wontae Noh, Daehyeon Kim, Julien Gatineau, Jean-Marc Girard
  • Patent number: 10309010
    Abstract: Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1?R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: June 4, 2019
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Satoko Gatineau, Changhee Ko, Jean-Marc Girard, Julien Gatineau
  • Publication number: 20190027357
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Application
    Filed: August 21, 2018
    Publication date: January 24, 2019
    Inventors: Jean-Marc Girard, Changhee Ko, Ivan Oshchepkov, Kazutaka Yanagita, Shingo Okubo, Naoto Noda, Julien Gatineau, Yann Martelat
  • Patent number: 9790591
    Abstract: Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R5Cp)2(L), wherein each R is independently H, an alkyl group, or R?3Si, with each R? independently being H or an alkyl group; L is selected from the group consisting of formamidinates (NR,R?-fmd) or amidinates (NR,R?R?-amd).
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: October 17, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Changhee Ko, Julien Gatineau, Clément Lansalot-Matras, Julien Lieffrig, Hana Ishii
  • Publication number: 20170186597
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 29, 2017
    Inventors: Jean-Marc GIRARD, Changhee KO, Ivan OSHCHEPKOV, Kazutaka YANAGITA, Shingo OKUBO, Naoto NODA, Julien GATINEAU
  • Patent number: 9633838
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: April 25, 2017
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Jean-Marc Girard, Changhee Ko, Ivan Oshchepkov, Kazutaka Yanagita, Shingo Okubo, Naoto Noda, Julien Gatineau
  • Publication number: 20170107623
    Abstract: Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4-[(ER2)2—NR]—, wherein M is Ti, Zr, or Hf bonded in an ?5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group and adjacent R's may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: December 30, 2016
    Publication date: April 20, 2017
    Applicant: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Daehyeon KIM, Satoko GATINEAU, Wontae NOH, Julien GATINEAU, Jean-Marc GIRARD
  • Publication number: 20170107617
    Abstract: Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; o and p is independently 0, 1 or 2; o+p>1; each R is independently hydrogen or or a C1-C4 hydrocarbon group; each L is independently a?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and each L? is independently NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: December 30, 2016
    Publication date: April 20, 2017
    Applicant: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Satoko GATINEAU, Daehyeon KIM, Wontae NOH, Julien GATINEAU, Jean-Marc GIRARD
  • Publication number: 20170107618
    Abstract: Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a ?1 anionic ligand selected from the group consisting of NR?2, OR?, Cp, amidinate, ?-diketonate, or keto-iminate, wherein R? is a H or a C1-C4 hydrocarbon group; and L? is NR? or O, wherein R? is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: December 30, 2016
    Publication date: April 20, 2017
    Applicant: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Satoko GATINEAU, Wontae NOH, Daehyeon KIM, Julien GATINEAU, Jean-Marc GIRARD
  • Patent number: 9543144
    Abstract: Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions are disclosed.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: January 10, 2017
    Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Hana Ishii, Nathanaelle Schneider, Julien Gatineau
  • Patent number: 9416443
    Abstract: The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: August 16, 2016
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Julien Gatineau, Clément Lansalot-Matras
  • Publication number: 20160137675
    Abstract: Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R5Cp)2(L), wherein each R is independently H, an alkyl group, or R?3Si, with each R? independently being H or an alkyl group; L is selected from the group consisting of formamidinates (NR,R?-fmd) or amidinates (NR, R?-amd).
    Type: Application
    Filed: November 30, 2015
    Publication date: May 19, 2016
    Inventors: Changhee KO, Julien GATINEAU, Clément LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII
  • Publication number: 20160111272
    Abstract: Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 21, 2016
    Inventors: Jean-Marc GIRARD, Changhee KO, Ivan OSHCHEPKOV, Kazutaka YANAGITA, Shingo OKUBO, Naoto NODA, Julien GATINEAU
  • Publication number: 20160040289
    Abstract: Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed.
    Type: Application
    Filed: March 12, 2014
    Publication date: February 11, 2016
    Inventors: Julien GATINEAU, Changhee KO, Jiro YOKOTA, Clément LANSALOT-MATRAS
  • Publication number: 20160032454
    Abstract: Bis(alkylimido)-bis(alkylamido)tungsten compounds, their synthesis, and their use for the deposition of tungsten-containing films are disclosed.
    Type: Application
    Filed: March 15, 2013
    Publication date: February 4, 2016
    Inventors: Julien GATINEAU, Changhee KO, Jiro YOKOTA, Clément LANSALOT-MATRAS
  • Patent number: 9240319
    Abstract: Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT1 or flat panel type devices. Also disclosed are methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chalcogenide-containing precursors to form chalcogenide-containing films.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: January 19, 2016
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Julien Gatineau, Mao Minoura, Hana Ishii