Abstract: An electronic device includes an integrated circuit with a MOS transistor and a heating circuit electrically coupled to at least two points of one of the source or drain semiconductive region of the transistor. A portion of the source or drain semiconductive region between the two points forms a resistive element. The heating circuit is configured to cause a current to circulate through the resistive element between the two points to heat an active region of the transistor.

Abstract: An electronic device includes an integrated circuit with a MOS transistor and a heating circuit electrically coupled to at least two points of one of the source or drain semiconductive region of the transistor. A portion of the source or drain semiconductive region between the two points forms a resistive element. The heating circuit is configured to cause a current to circulate through the resistive element between the two points to heat an active region of the transistor.

Abstract: A first assembly of critical cells is to be monitored. An equivalent capacitance of output cells coupled to the critical path is determined. Logic level inputs of the critical cells for signal propagation are also determined. A second assembly of control logic cells is provided which copies the first assembly in terms of number of cells, type of cells and cell connection such that each of the control cells is a homolog of a corresponding critical cell. Charge cells are provided at the outputs of the control cells having an equivalent capacitance in accordance with the determined capacitance of the output cells. For each control cell, logic levels are asserted in accordance with the determined configuration of the critical path. A signal generator applies a signal the input of the second assembly and a signal receiver is coupled to the output of the second assembly.

Abstract: A first assembly of critical cells is to be monitored. An equivalent capacitance of output cells coupled to the critical path is determined. Logic level inputs of the critical cells for signal propagation are also determined. A second assembly of control logic cells is provided which copies the first assembly in terms of number of cells, type of cells and cell connection such that each of the control cells is a homolog of a corresponding critical cell. Charge cells are provided at the outputs of the control cells having an equivalent capacitance in accordance with the determined capacitance of the output cells. For each control cell, logic levels are asserted in accordance with the determined configuration of the critical path. A signal generator applies a signal the input of the second assembly and a signal receiver is coupled to the output of the second assembly.

Abstract: A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.

Abstract: A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.