Patents by Inventor Julien LIEFFRIG

Julien LIEFFRIG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
    Patent number: 9499571
    Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: November 22, 2016
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clement Lansalot-Matras, Julien Lieffrig, Hana Ishii, Christian Dussarrat
  • TITANIUM-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF TITANIUM-CONTAINING FILMS
    Publication number: 20160137675
    Abstract: Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R5Cp)2(L), wherein each R is independently H, an alkyl group, or R?3Si, with each R? independently being H or an alkyl group; L is selected from the group consisting of formamidinates (NR,R?-fmd) or amidinates (NR, R?-amd).
    Type: Application
    Filed: November 30, 2015
    Publication date: May 19, 2016
    Inventors: Changhee KO, Julien GATINEAU, Clément LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII
  • TANTALUM- OR VANADIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF TANTALUM- OR VANADIUM-CONTAINING FILMS
    Publication number: 20160083405
    Abstract: Tantalum- or Vanadium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Tantalum- or Vanadium-containing films on one or more substrates via vapor deposition processes using the disclosed Tantalum- or Vanadium-containing film forming compositions. The disclosed Tantalum- or Vanadium-containing film forming compositions comprising a precursor having the formula M(R5Cp)2(L), wherein M is Ta or V; each R is independently H, an alkyl group, or R?3Si, with each R? independently being H or an alkyl group; and L is selected from the group consisting of formamidinates (NR, R?-fmd), amidinates (NR, R?, R?-amd), or guanidinates (NR, R?, NR?, R??-gnd).
    Type: Application
    Filed: November 30, 2015
    Publication date: March 24, 2016
    Inventors: Clément LANSALOT-MATRAS, Julien Lieffrig, Jooho Lee, Wontae Noh
  • SILICON- AND ZIRCONIUM-CONTAINING COMPOSITIONS FOR VAPOR DEPOSITION OF ZIRCONIUM-CONTAINING FILMS
    Publication number: 20150176120
    Abstract: Disclosed are Silicon- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing thin films on substrates via vapor deposition processes.
    Type: Application
    Filed: December 23, 2014
    Publication date: June 25, 2015
    Inventors: Clement LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII, Christian DUSSARRAT
  • GERMANIUM- AND ZIRCONIUM-CONTAINING COMPOSITIONS FOR VAPOR DEPOSITION OF ZIRCONIUM-CONTAINING FILMS
    Publication number: 20150110958
    Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: December 23, 2014
    Publication date: April 23, 2015
    Inventors: Clement LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII, Christian DUSSARRAT