Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

Abstract: A control method for use in an engine braking maneuver for an internal combustion engine (ICE) system including a turbocharger having a variable-nozzle turbine (VNT), the ICE system further including an exhaust flap disposed in an exhaust line downstream of the variable-nozzle turbine. Prior to closing the exhaust flap, the VNT vanes are first parked in a fully open position. After the exhaust flap closes, the vanes are pivoted to a fully closed position and are continuously urged against a hard stop as long as the exhaust flap is closed. Termination of engine braking entails pivoting the vanes back to the fully open position, whereupon the exhaust flap is opened.

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

Abstract: Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

Abstract: The disclosure relates to a method for verifying a printed pattern. In an example embodiment, the method includes defining sectors of at least a portion of the features in the reference pattern, determining a contour of the printed pattern, and superimposing the contour of the printed pattern on the reference pattern. The method also includes determining surface areas of sectors of the printed pattern that correspond to the sectors of the reference pattern and calculating one or more parameters as a function of at least one of the surface areas, the parameters being related to a single sector or to multiple sectors. The method additionally includes evaluating the parameters with respect to a reference value.

Abstract: Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

Abstract: The disclosure is directed to a method for designing a lithographic mask to print a pattern of structural features, wherein an OPC-based methodology may be used for producing one or more simulated patterns as they would be printed through the optimized mask. A real mask is then produced according to the optimized design, and an actual print is made through the mask. To evaluate the printed pattern and the PW on wafer more accurately, experimental contours are extracted from the CD-SEM measurements of the printed pattern. The verification of the mask is based on a comparison between on the one hand the contour obtained from the printed pattern, and on the other hand the intended pattern and/or the simulated contour. A direct comparison can be made between simulation and experiment, without losing all the pieces of info contained in each single CD-SEM picture.

Abstract: The disclosure relates to a method for verifying a printed pattern. In an example embodiment, the method includes defining sectors of at least a portion of the features in the reference pattern, determining a contour of the printed pattern, and superimposing the contour of the printed pattern on the reference pattern. The method also includes determining surface areas of sectors of the printed pattern that correspond to the sectors of the reference pattern and calculating one or more parameters as a function of at least one of the surface areas, the parameters being related to a single sector or to multiple sectors. The method additionally includes evaluating the parameters with respect to a reference value.

Abstract: The disclosure is directed to a method for designing a lithographic mask to print a pattern of structural features, wherein an OPC-based methodology may be used for producing one or more simulated patterns as they would be printed through the optimized mask. A real mask is then produced according to the optimized design, and an actual print is made through the mask. To evaluate the printed pattern and the PW on wafer more accurately, experimental contours are extracted from the CD-SEM measurements of the printed pattern. The verification of the mask is based on a comparison between on the one hand the contour obtained from the printed pattern, and on the other hand the intended pattern and/or the simulated contour. A direct comparison can be made between simulation and experiment, without losing all the pieces of info contained in each single CD-SEM picture.

Abstract: An electro-pneumatic actuator for a waste gate includes an electric actuator to impart linear motion to an actuator shaft, and a pneumatic chamber defining a passage extending therethrough, the actuator shaft extending through the passage, the pneumatic chamber being sealed with respect to the actuator shaft. A piston is disposed in the pneumatic chamber and arranged for movement in the pneumatic chamber, the piston being affixed to the actuator shaft such that the actuator shaft and the piston move together as a unit. There is a port into the pneumatic chamber for feeding a gas into the pneumatic chamber or exhausting the gas therefrom so as to exert a pressure force on the piston and thereby provide a pneumatic assist to the force exerted on the actuator shaft.

Abstract: An assembly can include vanes and a base configured to seat the vanes at a radial distance about an axis where each vane includes a leading edge and a trailing edge, a pair of lateral surfaces that meet at the leading edge and at the trailing edge, an extension that extends from one of the lateral surfaces and that has a contact surface, and a stop surface to form a contact with a contact surface of another vane to define a minimum flow distance between the vane and the other vane. Various other examples of devices, assemblies, systems, methods, etc., are also disclosed.

Abstract: A variable-vane assembly for a turbocharger includes an annular nozzle ring supporting an array of rotatable vanes, an insert having a tubular portion sealingly received into the bore of the turbine housing and having a nozzle portion extending radially out from one end of the tubular portion and being axially spaced from the nozzle ring with the vanes therebetween, and an annular retainer ring disposed radially outward of the nozzle ring and extending generally radially inwardly. The nozzle ring's face is stepped, and a radially inner edge of the retainer ring engages the face of the nozzle ring radially outward of the step, the radially inner edge of the retainer ring having an axial thickness that is less than the step height such that a remaining portion of the step is presented to the exhaust gas flowing through the nozzle.

Abstract: An electro-pneumatic actuator for a waste gate includes an electric actuator to impart linear motion to an actuator shaft, and a pneumatic chamber defining a passage extending therethrough, the actuator shaft extending through the passage, the pneumatic chamber being sealed with respect to the actuator shaft. A piston is disposed in the pneumatic chamber and arranged for movement in the pneumatic chamber, the piston being affixed to the actuator shaft such that the actuator shaft and the piston move together as a unit. There is a port into the pneumatic chamber for feeding a gas into the pneumatic chamber or exhausting the gas therefrom so as to exert a pressure force on the piston and thereby provide a pneumatic assist to the force exerted on the actuator shaft.

Abstract: A variable-vane assembly for a turbocharger includes an annular nozzle ring supporting an array of rotatable vanes, an insert having a tubular portion sealingly received into the bore of the turbine housing and having a nozzle portion extending radially out from one end of the tubular portion and being axially spaced from the nozzle ring with the vanes therebetween, and an annular retainer ring disposed radially outward of the nozzle ring and extending generally radially inwardly. The nozzle ring's face is stepped, and a radially inner edge of the retainer ring engages the face of the nozzle ring radially outward of the step, the radially inner edge of the retainer ring having an axial thickness that is less than the step height such that a remaining portion of the step is presented to the exhaust gas flowing through the nozzle.

Abstract: A variable-vane assembly for a variable nozzle turbine comprises a nozzle ring supporting a plurality of vanes affixed to vane arms that are engaged in recesses in the inner edge of a unison ring. The unison ring is rotatable about the axis of the nozzle ring so as to pivot the vane arms, thereby pivoting the vanes in unison. The unison ring is radially restrained by a combination of radial guide rollers and fixed axial-radial guide pins secured to the nozzle ring, and is axially restrained by one or more axial stops affixed to the nozzle ring.

Abstract: An assembly can include vanes and a base configured to seat the vanes at a radial distance about an axis where each vane includes a leading edge and a trailing edge, a pair of lateral surfaces that meet at the leading edge and at the trailing edge, an extension that extends from one of the lateral surfaces and that has a contact surface, and a stop surface to form a contact with a contact surface of another vane to define a minimum flow distance between the vane and the other vane. Various other examples of devices, assemblies, systems, methods, etc., are also disclosed.