Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of monolithic wafers and disaggregated integrated circuit (IC) dies, adjacent layers being coupled together by first interconnects having a pitch less than 10 micrometers between adjacent first interconnects, the disaggregated IC dies arranged with portions of the monolithic wafers into modular sub-assemblies; and a package substrate coupled to the modular sub-assemblies by second interconnects having a pitch greater than 10 micrometers between adjacent second interconnects. The disaggregated IC dies are surrounded laterally by a dielectric material, and the disaggregated IC dies are arranged with portions of the monolithic wafers such that a voltage regulator circuit in a first layer of the plurality of layers, a compute circuit in a second layer of the plurality of layers, and a memory circuit in a third layer of the plurality of layers are conductively coupled together in an intra-modular power delivery circuitry.

Abstract: In one embodiment, an integrated circuit apparatus includes a plurality of metallization layers, each metallization layer comprising voltage supply lines and signal lines. The apparatus also includes logic circuits formed between respective pairs of metallization layers, with each logic circuit comprising non-CMOS logic devices to perform an operation on a respective bit of an input set of bits. The non-CMOS logic devices may include one or more of ferroelectric field-effect transistor (FeFET) devices or spintronic logic devices (e.g., magnetoelectric spin orbit (MESO) devices or ferroelectric spin orbit logic (FSOL) devices), and each logic circuit may be formed on a different vertical plane within the apparatus.

Abstract: In one embodiment, a processor includes: a first plurality of intellectual property (IP) circuits to execute operations; and a second plurality of integrated voltage regulators, where the second plurality of integrated voltage regulators are oversubscribed with respect to the first plurality of IP circuits. Other embodiments are described and claimed.

Abstract: Technologies for majority gates are disclosed. In one embodiment, a ferroelectric layer has three inputs and an output adjacent a surface of the ferroelectric. When a voltage is applied to each input, the inputs and a ground plane below the ferroelectric layer form a capacitor. The ferroelectric layer becomes polarized based on the applied voltages at the inputs. The portion of the ferroelectric layer near the output becomes polarized in the direction of polarization of the majority of the inputs. The output voltage then reflects the majority voltage of the inputs.

Abstract: In one embodiment, a first integrated circuit component, a second integrated circuit component, and an electrical interconnect coupling the first integrated circuit component and the second integrated circuit component. The interconnect comprises one or more spintronic logic devices.

Abstract: A microelectronic assembly is provided comprising: a first plurality of integrated circuit (IC) dies in a first layer; a second plurality of IC dies in a second layer between the first layer and a third layer; and a third plurality of IC dies in the third layer. In some embodiments, the second plurality of IC dies comprises IC dies in an array of rows and columns, each IC die of the second plurality of IC dies is coupled to more than one IC die of the first plurality of IC dies, and the third plurality of IC dies is to provide electrical coupling between adjacent ones of the second plurality of IC dies.

Abstract: In one embodiment, a processor includes: a first plurality of intellectual property (IP) circuits to execute operations; and a second plurality of integrated voltage regulators, where the second plurality of integrated voltage regulators are oversubscribed with respect to the first plurality of IP circuits. Other embodiments are described and claimed.

Abstract: Embodiments disclosed herein include dies and die modules. In an embodiment, a die comprises a substrate with a first surface and a second surface opposite from the first surface. In an embodiment the substrate comprises a semiconductor material. In an embodiment, first bumps with a first pitch are on the first surface of the substrate. In an embodiment, a first layer surrounds the first bumps, where the first layer comprises a dielectric material. In an embodiment, second bumps with a second pitch are on the substrate. In an embodiment, the second pitch is greater than the first pitch. In an embodiment, a second layer surrounds the second bumps, where the second layer comprises a dielectric material.

Abstract: Techniques and mechanisms for mitigating stress on hybrid bonded interfaces in a multi-tier arrangement of integrated circuit (IC) dies. In an embodiment, first dies are bonded at a host die each via a respective one of first hybrid bond interfaces, wherein a second one or more dies are coupled to the host die each via a respective one of the first dies, and via a respective second hybrid bond interface. Stress at one of the hybrid bond interfaces is mitigated by properties of a first dielectric layer that extends to that hybrid bond interface. In another embodiment, stress at a given one of the hybrid bond interfaces is mitigated by properties of a dummy chip—or alternatively, properties of a patterned encapsulation structure—which is formed on the given hybrid bond interface.

Abstract: A composite integrated circuit (IC) structure includes at least a first IC die in a stack with a second IC die. Each die has a device layer and metallization layers interconnected to transistors of the device layer and terminating at features. First features of the first IC die are primarily of a first composition with a first microstructure. Second features of the second IC die are primarily of a second composition or a second microstructure. A first one of the second features is in direct contact with one of the first features. The second composition has a thermal conductivity at least an order of magnitude lower than that of the first composition and first microstructure. The first composition may have a thermal conductivity at least 40 times that of the second composition or second microstructure.

Abstract: Hybrid bonded 3D die stacks with improved thermal performance, related apparatuses, systems, and methods of fabrication are disclosed. Such hybrid bonded 3D die stacks include multiple levels of dies including a level of the 3D die stack with one or more integrated circuit dies and one or more thermal dies both directly bonded to another level of the 3D die stack.

Abstract: An apparatus and method is described that digitally coordinates dynamically adaptable clock and voltage supply to significantly reduce the energy consumed by a processor without impacting its performance or latency. A signal is generated that indicates a long latency operation. This signal is used to reduce power supply voltage and frequency of the adaptable clock. An early resume indicator is generated a few nanoseconds before normal operations are about to resume. This early resume signal is used to power up the power-downed voltage regulator, and/or can increase frequency and/or supply voltage back to normal level before normal processor operations are about to resume.

Abstract: A microelectronic assembly is provided, comprising: a first integrated circuit (IC) die at a first level, a second IC die at a second level, and a third IC die at a third level, the second level being in between the first level and the third level. A first interface between the first level and the second level is electrically coupled with high-density interconnects of a first pitch and a second interface between the second level and the third level is electrically coupled with interconnects of a second pitch. In some embodiments, at least one of the first IC die, second IC die, and third IC die comprises another microelectronic assembly. In other embodiments, at least one of the first IC die, second IC die, and third IC die comprises a semiconductor die.

Abstract: A thermal management scheme, for a multichip module, that is aware of various dies in a stack (horizontal and/or vertical) and heat generated from them, local hot spots in a victim die, and hot spots in aggressor die(s). Each victim die receives telemetry information from thermal sensors located in aggressor dies as well as local thermal sensors in the victim die. The telemetry information is used to enable a virtual sensing scheme where temperature for a target die (e.g., a victim die) and/or its intellectual property (IP) domain is estimated or calculated. The estimated or calculated temperature is then used for performance management of the victim and/or aggressor dies in the stack.

Abstract: A system on a chip is described that comprises a processor and a set of memory components that store instructions, which when executed by the processor cause the system on a chip to: generate, by a set of data collectors of a telemetry subsystem, a set of streams of telemetry metadata describing operation of the processor, forward one or more streams of telemetry metadata from the set of streams of telemetry metadata to a set of machine learning-driven adaptation decision models, receive, from the set of machine learning-driven adaptation decision models, a set of configuration parameters for controlling operation of the processor based on the one or more streams of telemetry metadata, and modify operation of the processor based on the set of configuration parameters.

Abstract: An apparatus and method is described that digitally coordinates dynamically adaptable clock and voltage supply to significantly reduce the energy consumed by a processor without impacting its performance or latency. A signal is generated that indicates a long latency operation. This signal is used to reduce power supply voltage and frequency of the adaptable clock. An early resume indicator is generated a few nanoseconds before normal operations are about to resume. This early resume signal is used to power up the power-downed voltage regulator, and/or can increase frequency and/or supply voltage back to normal level before normal processor operations are about to resume.

Abstract: Method, apparatus, and program means for performing bitstream buffer manipulation with a SIMD merge instruction. The method of one embodiment comprises determining whether any unprocessed data bits for a partial variable length symbol exist in a first data block is made. A shift merge operation is performed to merge the unprocessed data bits from the first data block with a second data block. A merged data block is formed. A merged variable length symbol comprised of the unprocessed data bits and a plurality of data bits from the second data block is extracted from the merged data block.

Abstract: In one embodiment, a processor includes: a first plurality of intellectual property (IP) circuits to execute operations; and a second plurality of integrated voltage regulators, where the second plurality of integrated voltage regulators are oversubscribed with respect to the first plurality of IP circuits. Other embodiments are described and claimed.

Abstract: A system on a chip is described that comprises a processor and a set of memory components that store instructions, which when executed by the processor cause the system on a chip to: generate, by a set of data collectors of a telemetry subsystem, a set of streams of telemetry metadata describing operation of the processor, forward one or more streams of telemetry metadata from the set of streams of telemetry metadata to a set of machine learning-driven adaptation decision models, receive, from the set of machine learning-driven adaptation decision models, a set of configuration parameters for controlling operation of the processor based on the one or more streams of telemetry metadata, and modify operation of the processor based on the set of configuration parameters.

Abstract: Method, apparatus, and program means for performing bitstream buffer manipulation with a SIMD merge instruction. The method of one embodiment comprises determining whether any unprocessed data bits for a partial variable length symbol exist in a first data block is made. A shift merge operation is performed to merge the unprocessed data bits from the first data block with a second data block. A merged data block is formed. A merged variable length symbol comprised of the unprocessed data bits and a plurality of data bits from the second data block is extracted from the merged data block.