Patents by Inventor Julien Venturini

Julien Venturini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9700959
    Abstract: A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: July 11, 2017
    Assignee: LASER SYSTEMS & SOLUTIONS OF EUROPE
    Inventors: Julien Venturini, Bruno Godard, Cyril Dutems, Marc Bucchia
  • Publication number: 20120171876
    Abstract: A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.
    Type: Application
    Filed: March 29, 2010
    Publication date: July 5, 2012
    Applicant: EXCICO FRANCE
    Inventors: Julien Venturini, Bruno Godard, Cyril Dutems, Marc Bucchia
  • Publication number: 20120037603
    Abstract: A method for irradiating semiconductor material including irradiating a region of a semiconductor material layer surface with a first laser having laser irradiation parameters to melt at least a part of the region and controlling the irradiation process by adapting the irradiation parameters by determining the depth of the melted region part. An apparatus for irradiating semiconductor material is disclosed which has a first laser for irradiating a region of a semiconductor layer surface to melt at least a part of the region. The laser having laser irradiation parameters and a controller for controlling the irradiation process by adapting the laser irradiation parameters by determining the depth of the melted region part.
    Type: Application
    Filed: December 21, 2009
    Publication date: February 16, 2012
    Applicant: EXCICO FRANCE
    Inventor: Julien Venturini