Patents by Inventor Julien Voillot

Julien Voillot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TUNNEL MAGNETORESISTANCE (TMR) ELEMENT HAVING COBALT IRON AND TANTALUM LAYERS
    Publication number: 20210383953
    Abstract: In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.
    Type: Application
    Filed: August 18, 2021
    Publication date: December 9, 2021
    Applicant: Allegro MicroSystems, LLC
    Inventors: Paolo Campiglio, Amal Hamdache, Julien Voillot
  • Layout of magnetoresistance element
    Patent number: 11187764
    Abstract: In one aspect, a bridge includes a first magnetoresistance element that includes a first set of pillars, a second magnetoresistance element that includes a second set of pillars, a third magnetoresistance element that includes a third set of pillars and a fourth magnetoresistance element that includes a fourth set of pillars. The first set of pillars and the fourth set of pillars are disposed in a first matrix and the second set of pillars and the third set of pillars are disposed in a second matrix. The second magnetoresistance element is in series with the first magnetoresistance element, the third magnetoresistance element is in parallel with the first magnetoresistance element and the fourth magnetoresistance element is in series with the third magnetoresistance element.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: November 30, 2021
    Assignee: Allegro MicroSystems, LLC
    Inventors: Rémy Lassalle-Balier, Amal Hamdache, Julien Voillot, Paolo Campiglio
  • LAYOUT OF MAGNETORESISTANCE ELEMENT
    Publication number: 20210293911
    Abstract: In one aspect, a bridge includes a first magnetoresistance element that includes a first set of pillars, a second magnetoresistance element that includes a second set of pillars, a third magnetoresistance element that includes a third set of pillars and a fourth magnetoresistance element that includes a fourth set of pillars. The first set of pillars and the fourth set of pillars are disposed in a first matrix and the second set of pillars and the third set of pillars are disposed in a second matrix. The second magnetoresistance element is in series with the first magnetoresistance element, the third magnetoresistance element is in parallel with the first magnetoresistance element and the fourth magnetoresistance element is in series with the third magnetoresistance element.
    Type: Application
    Filed: March 20, 2020
    Publication date: September 23, 2021
    Applicant: Allegro MicroSystems, LLC
    Inventors: Rémy Lassalle-Balier, Amal Hamdache, Julien Voillot, Paolo Campiglio
  • Tunnel magnetoresistance (TMR) element having cobalt iron and tantalum layers
    Patent number: 11127518
    Abstract: In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: September 21, 2021
    Assignee: ALLEGRO MICROSYSTEMS, LLC
    Inventors: Paolo Campiglio, Amal Hamdache, Julien Voillot
  • TUNNEL MAGNETORESISTANCE (TMR) ELEMENT HAVING COBALT IRON AND TANTALUM LAYERS
    Publication number: 20210065949
    Abstract: In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.
    Type: Application
    Filed: September 18, 2019
    Publication date: March 4, 2021
    Applicant: Allegro MicroSystems, LLC
    Inventors: Paolo Campiglio, Amal Hamdache, Julien Voillot