Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: A method for shielding a system-in-package (SIP) assembly from electromagnetic interference (EMI) includes laminating a pre-form EMI shielding film onto the assembly in a single lamination process. The EMI shielding film may be moldable in a vacuum lamination process to cover the SIP assembly and to substantially fill trenches formed in the assembly between adjacent component modules. The SIP assembly is accordingly shielded from EMI through the application of a single EMI shielding film.

Abstract: A conductive composition that is sinterable comprises (i) micron- or submicron-sized silver flakes or powders and (ii) a fluxing agent, or an oxygenated solvent, or a peroxide. The composition can be used to adhere semiconductor dies with silver backing to copper-, silver-, or gold lead-frames at sintering temperatures of ?250° C. without the application of pressure.

Abstract: A sintering film comprising one or more metals, one or more metal alloys, or blends of one or more metals and one or more metal alloys, is prepared optionally using a solid or semi-solid organic binder. The organic binder can have fluxing functionality; the organic binder can be one that will partially or completely decompose upon sintering of the metal or metal alloy in the composition. In one embodiment, the sintering film is provided on an end use substrate, such as a silicon die or wafer, or a metal circuit board or foil, or the sintering film is provided on a carrier, such as a metal mesh. Preparation is accomplished by dispersing the metal or metal alloy in a suitable solvent, with or without a binder, and exposing the composition to high temperature to evaporate off the solvent and partially sinter the metal or metal alloy.

Abstract: A conductive composition comprises (i) micro- or submicro-sized silver flake having a tap density of 4.6 g/cc or higher and (ii) a solvent that dissolves any fatty acid lubricant or surfactant present on the surface of the silver. In one embodiment, (iii) a small amount of peroxide is present. No organic resin is present in the composition.

Abstract: A conductive composition that is sinterable comprises (i) micron- or submicron-sized silver flakes or powders and (ii) a fluxing agent, or an oxygenated solvent, or a peroxide. The composition can be used to adhere semiconductor dies with silver backing to copper-, silver-, or gold lead-frames at sintering temperatures of ?250° C. without the application of pressure.