Abstract: A device comprising a gate pad, a source pad and a passive actuator arranged to form a reversible mechanical and electrical connection between the gate pad and the source pad only if the temperature in the passive actuator exceeds a threshold value.

Abstract: The present invention concerns a method and a device for increasing the reliability of a power module composed of plural power semiconductors that are connected in parallel, the power semiconductors being connected to the external pins of the package of the power module through metallic connections. The invention: —selects one power semiconductor among the power semiconductors connected in parallel according to a criterion, —applies a same input patient to the not selected power semiconductors connected in parallel, —increases the temperature of the selected power semiconductor in order to reach a target temperature of the power semiconductor during a time duration in order to achieve and interface grain homogenisation of the metallic connections of the selected power semiconductor, —applies the same input pattern to the selected power semiconductor after the time duration.

Abstract: The present invention concerns a method and a device for increasing the reliability of a power module composed of plural power semiconductors that are connected in parallel, the power semiconductors being connected to the external pins of the package of the power module through metallic connections. The invention - selects one power semiconductor among the power semiconductors connected in parallel according to a criterion. - applies a same input patient to the not selected power semiconductors connected in parallel. - increases the temperature of the selected power semiconductor in order to reach a target temperature of tlic power semicon- ductor dunng a time duration m order to achieve and interface grain homogenisation of the metallic connections of tlic selected power semiconductor. - applies the same input pattern to tlic selected pow er semiconductor after tlic time duration.

Abstract: A device comprising a gate pad, a source pad and a passive actuator arranged to form a reversible mechanical and electrical connection between the gate pad and the source pad only if the temperature in the passive actuator exceeds a threshold value.

Abstract: The present invention concerns a method and device for monitoring the gate signal of a power semiconductor (SI), the gate signal of the power semiconductor (SI) being provided by a gate driver (12), generates an expected signal (VGexp) that corresponds to the signal outputted by the gate driver (12) when no deterioration of the gate driver (12) and/or of the power semiconductor (SI) and/or of a load linked to the power semiconductor (SI) exists, compares the expected signal (VGexp) and the signal (VGmeas) outputted by the gate driver (12), determines if a deterioration of the gate driver (12) and/or of the power semiconductor (SI) and/or of a load linked to the power semiconductor (SI) exists using the result of the comparing of the expected signal (VGexp) and the signal (VGmeas) outputted by the gate driver (12).

Abstract: A method to establish a degradation state of electrical connections in a power semiconductor device comprising: measuring at least two voltage drop values under two respective current values for the same temperature value. The two current values are strictly different or the measurements are made under two distinct gate levels of a transistor; saving the measured values as calibration data; monitoring operational conditions of said power semiconductor device; measuring at least two voltage drop values under respective same current values as preceding, and at two respective moments during which the monitored operational conditions corresponding to two respective predefined sets of criteria related to states of operation and to a common temperature; saving the at least two values as operational data; calculating a numerical index in a manner to estimate a degradation state of said power semiconductor device.

Abstract: The present invention concerns a device and a method for controlling the switching from a conducting state to a non conducting state or from a non conducting state to a conducting state of a semiconductor power switch providing current to a load, the device receiving an input signal that is intended to drive the semiconductor power switch. The invention: —senses the derivative of the drain to source current going through the semiconductor power switch in order to obtain a voltage representative of the sensed derivative of drain to source current, —amplifies the voltage representative of the sensed derivative of drain to source current, —adds the amplified voltage representative of the derivative of the sensed drain to source current to the input signal during a given time period.

Abstract: The present invention concerns a device and a method for controlling the switching from a conducting state to a non conducting state or from a non conducting state to a conducting state of a semiconductor power switch providing current to a load, the device receiving an input signal that is intended to drive the semiconductor power switch. The invention:—senses the derivative of the drain to source current going through the semiconductor power switch in order to obtain a voltage representative of the sensed derivative of drain to source current,—amplifies the voltage representative of the sensed derivative of drain to source current,—adds the amplified voltage representative of the derivative of the sensed drain to source current to the input signal during a given time period.

Abstract: The present invention concerns a method for controlling the temperature of a multi-die power module, comprising: determining and memorizing a first weighted arithmetic mean of junction temperatures of the dies of the multi-die power module, determining successively another weighted arithmetic mean of junction temperatures of the dies, checking if the difference between the other weighted arithmetic mean and the memorized weighted arithmetic mean is lower than a first predetermined value, enabling a modification of the duty cycle of an input signal to apply to at least one selected die of the multi-die power module if the difference is lower than a first predetermined value, disabling a modification of the duty cycle of the input signal to apply to the at least one die of the multi-die power module if the difference is not lower than the first predetermined value.

Abstract: A method to establish a degradation state of electrical connections in a power semiconductor device comprising: measuring at least two voltage drop values under two respective current values for the same temperature value. The two current values are strictly different or the measurements are made under two distinct gate levels of a transistor; saving the measured values as calibration data; monitoring operational conditions of said power semiconductor device; measuring at least two voltage drop values under respective same current values as preceding, and at two respective moments during which the monitored operational conditions corresponding to two respective predefined sets of criteria related to states of operation and to a common temperature; saving the at least two values as operational data; calculating a numerical index in a manner to estimate a degradation state of said power semiconductor device.

Abstract: The present invention concerns a method for controlling the temperature of a multi-die power module, comprising: determining and memorizing a first weighted arithmetic mean of junction temperatures of the dies of the multi-die power module, determining successively another weighted arithmetic mean of junction temperatures of the dies, checking if the difference between the other weighted arithmetic mean and the memorized weighted arithmetic mean is lower than a first predetermined value, enabling a modification of the duty cycle of an input signal to apply to at least one selected die of the multi-die power module if the difference is lower than a first predetermined value, disabling a modification of the duty cycle of the input signal to apply to the at least one die of the multi-die power module if the difference is not lower than the first predetermined value.