Abstract: A width-adjustable drop-in stair system for an in-ground vinyl liner swimming pool includes a first and second drop-in step components having first and second lengths. The first and second drop-in step components are arranged as parts of a stair step that attaches to opposing sidewall panels of the swimming pool. The second drop-in step component is engaged in nested relationship with the first drop-in step component at a nesting overlap distance that is established to configure the stair step with a defined width dimension corresponding to a distance between the opposing sidewall panels to which the stair step is attached. The defined width dimension is less than the first and second lengths in total. The first and second drop-in step components are fastened together so as to be statically secured as parts of the stair step.

Abstract: A width-adjustable drop-in stair system for an in-ground vinyl liner swimming pool includes a first and second drop-in step components having first and second lengths. The first and second drop-in step components are arranged as parts of a stair step that attaches to opposing sidewall panels of the swimming pool. The second drop-in step component is engaged in nested relationship with the first drop-in step component at a nesting overlap distance that is established to configure the stair step with a defined width dimension corresponding to a distance between the opposing sidewall panels to which the stair step is attached. The defined width dimension is less than the first and second lengths in total. The first and second drop-in step components are fastened together so as to be statically secured as parts of the stair step.

Abstract: Current sensing with RDSON correction is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSON voltage drop across the MOS transistor switch to yield a measured RDSON voltage drop; and calculating the current using the measured RDSON drop and the voltage correction factor.

Abstract: Current sensing with RDSON correction is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSON voltage drop across the MOS transistor switch to yield a measured RDSON voltage drop; and calculating the current using the measured RDSON drop and the voltage correction factor.

Abstract: Current sensing with RDSON correction is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSON voltage drop across the MOS transistor switch to yield a measured RDSON voltage drop; and calculating the current using the measured RDSON drop and the voltage correction factor.

Abstract: Current sensing with RDSON correction is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSON voltage drop across the MOS transistor switch to yield a measured RDSON voltage drop; and calculating the current using the measured RDSON drop and the voltage correction factor.

Abstract: Current sensing with RDSON correction is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSON voltage drop across the MOS transistor switch to yield a measured RDSON voltage drop; and calculating the current using the measured RDSON drop and the voltage correction factor.

Abstract: A protection circuit for a power amplifier connected as a negative feedback loop around the power amplifier. The negative feedback loop comprises a detector circuit, a driver circuit and an attenuator circuit. The detector circuit receives output voltage from the power amplifier and generates a signal when the output voltage exceeds a predefined threshold. The driver circuit filters the signal received from the detector circuit to maintain feedback loop stability and adjusts the feedback loop bandwidth and gain to provide a filtered signal. The attenuator circuit receives the filtered signal and attenuates the input voltage of the power amplifier to reduce the output voltage of the power amplifier to a level below the predefined threshold.

Abstract: A method and circuit system for improving power efficiency of RF power amplifiers is disclosed. A preferred embodiment comprises a power amplifier comprising: a plurality of amplifier stages, a power regulator providing an output supply voltage at an output node responsive to an adjustable power control signal, wherein the output supply voltage is applied to at least one stage of a power amplifier; and an amplifier biaser providing a bias signal corresponding to the adjustable power control signal, wherein the output supply voltage and the bias signal are independently generated as functions of the adjustable power control signal.

Abstract: A photomask assembly and method for protecting the photomask assembly from contaminants generated during a lithography process are disclosed. A photomask assembly includes a pellicle assembly formed from a pellicle frame and a pellicle film coupled to a first surface of the pellicle frame. The pellicle frame further includes an inner wall and an outer wall. A photomask is coupled to a second surface of the pellicle frame opposite the pellicle film. A molecular sieve that prevents airborne molecular contaminants (AMCs) generated during a lithography process from contaminating the photomask is associated with the pellicle assembly.