Abstract: A method of monitoring the conditions during chemical vapor deposition. First, a first substrate is provided. A first oxide layer is formed over the first substrate and then a first silicon nitride layer is deposited over the first oxide layer under a set of depositing conditions. The first silicon nitride layer is removed so that the remaining first oxide layer can serve as a first measuring oxide layer. The interface trap density of the first measuring oxide layer is measured to obtain a first interface trap density. A second substrate is provided. A second oxide layer is formed over the second substrate. After setting the depositing conditions identical to the set of depositing conditions for depositing the first silicon nitride layer over the first substrate, a second silicon nitride layer is deposited over the second oxide layer. The second silicon nitride layer is performed under an actual set of depositing conditions.

Abstract: The present invention provides a method of fabricating capacitor dielectric layer. A bottom electrode covered by a native oxide layer on a chip is provided. The chip is disposed into a low pressure furnace. A mixture of dichlorosilane and ammonia is introduced into the low pressure furnace to form a nitride layer on the native oxide layer. In the same low pressure furnace, nitrogen monoxide or nitric oxygen is infused to form an oxynitride layer on the nitride layer.