Patents by Inventor Jumpei Hayashi
Jumpei Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130250417Abstract: A vibration apparatus includes a vibrating body that includes a piezoelectric material having a lead content of less than 1000 ppm, and has an electromechanical energy converting element having an electrode; and a control unit that applies at least two driving voltages to the electromechanical energy converting element, and generates a combined vibration by providing a time phase difference to the vibrating body and generating multiple stable waves having mutually different orders; wherein the control unit changes at least one of the voltage amplitude ratio and time phase difference of at least two driving voltages, so as to change the amplitude distribution of the combined vibration.Type: ApplicationFiled: March 7, 2013Publication date: September 26, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Kaishi Ohashi, Toshifumi Urakami, Toshihiro Ifuku, Yasushi Shimizu, Tatsuo Furuta, Takanori Matsuda, Makoto Kubota, Jumpei Hayashi
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Publication number: 20130241347Abstract: Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.Type: ApplicationFiled: December 15, 2011Publication date: September 19, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Tatsuya Suzuki, Masami Tsukamoto, Mikio Shimada, Toshihiro Ifuku, Takanori Matsuda, Makoto Kubota, Jumpei Hayashi
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Patent number: 8529785Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A(ZnxTi(1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.Type: GrantFiled: July 24, 2009Date of Patent: September 10, 2013Assignees: Canon Kabushiki Kaisha, Kyoto University, Tokyo Institute of Technology, Sophia University, University of Yamanashi, National Institute of Advanced Industrial Science and Technology, Tokyo University of Science Educational Foundation Administrative OrganizationInventors: Makoto Kubota, Kaoru Miura, Toshihiro Ifuku, Jumpei Hayashi, Masaki Azuma, Olga Alexandrovna Smirnova, Hiroshi Funakubo, Hiroshi Uchida, Nobuhiro Kumada, Satoshi Wada, Takashi Iijima, Soichiro Okamura
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Publication number: 20130127298Abstract: Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General formula (1) where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9?x?1.25, 0.4?j?0.6, 0.4?k?0.6, 0.09?l?0.49, 0.19?m?0.64, 0.13?n?0.48, and l+m+n=1 are satisfied.Type: ApplicationFiled: February 28, 2011Publication date: May 23, 2013Applicants: CANON KABUSHIKI KAISHA, SOPHIA SCHOOL CORPORATION, TOKYO INSTITUTE OF TECHNOLOGYInventors: Makoto Kubota, Kaoru Miura, Hisato Yabuta, Takayuki Watanabe, Jumpei Hayashi, Hiroshi Funakubo, Tomoaki Yamada, Shintaro Yasui, Keisuke Yazawa, Hiroshi Uchida, Jun-ichi Nagata
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Publication number: 20130088119Abstract: A piezoelectric material including a strontium calcium sodium niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. A piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are strontium, calcium, sodium, and niobium, and tungsten. The metal elements satisfy following conditions on a molar basis: when Sr/Nb=a, 0.320?a?0.430, when Ca/Nb=b, 0.008?b?0.086, and when Na/Nb=c, 0.180?c?0.200. The tungsten content on a metal basis is 0.40 to 3.20 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.Type: ApplicationFiled: June 7, 2011Publication date: April 11, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Jumpei Hayashi, Takanori Matsuda, Takayuki Watanabe
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Publication number: 20130088120Abstract: A piezoelectric material including a barium bismuth niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. A piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are barium, bismuth, and niobium, and tungsten. The metal elements satisfy following conditions on a molar basis: when Ba/Nb=a, 0.30?a?0.40, and when Bi/Nb=b, 0.012?b?0.084. The tungsten content on a metal basis is 0.40 to 3.00 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.Type: ApplicationFiled: June 7, 2011Publication date: April 11, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Jumpei Hayashi, Takanori Matsuda, Takayuki Watanabe
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Publication number: 20130076204Abstract: A piezoelectric material containing a barium bismuth calcium niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. The piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are barium, bismuth, calcium, and niobium; and tungsten. The metal elements satisfy following conditions on a molar basis: when Ba/Nb=a, 0.37?a?0.40, when Bi/Nb=b, 0.020?b?0.065, and when Ca/Nb=c, 0.007?c?0.10. The tungsten content on a metal basis is 0.4 to 2.0 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.Type: ApplicationFiled: June 7, 2011Publication date: March 28, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Takanori Matsuda, Takayuki Watanabe, Jumpei Hayashi
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Publication number: 20130056671Abstract: Provided is a piezoelectric ceramics that can achieve both high piezoelectric performance and a high Curie temperature. Also provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric ceramics. The piezoelectric ceramics include a perovskite-type metal oxide expressed by a general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3, where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.40?x?0.80, y satisfies O?y?0.30, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied, and are oriented in a (111) plane in a pseudocubic expression.Type: ApplicationFiled: August 30, 2012Publication date: March 7, 2013Applicants: UNIVERSITY OF YAMANASHI, CANON KABUSHIKI KAISHAInventors: Makoto Kubota, Takayuki Watanabe, Hisato Yabuta, Jumpei Hayashi, Nobuhiro Kumada, Satoshi Wada
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Publication number: 20130029181Abstract: A method of manufacturing ceramics includes: placing, on a base material, a first slurry in which a metal oxide powder is dispersed; applying a magnetic field to the first slurry to solidify the first slurry, thereby forming an under coat layer made of a first compact; placing, on the under coat layer, a second slurry containing a metal oxide powder constituting the ceramics; applying a magnetic field to the second slurry to solidify the second slurry, thereby forming a second compact to obtain a laminated body of the second compact and the under coat layer; and obtaining the ceramics made of the second compact by removing the under coat layer from the laminated body of the second compact and the under coat layer and then sintering the second compact, or sintering the laminated body of the second compact and the under coat layer and then removing the under coat layer.Type: ApplicationFiled: April 15, 2011Publication date: January 31, 2013Applicants: UNIVERSITY OF YAMANASHI, CANON KABUSHIKI KAISHAInventors: Takanori Matsuda, Tatsuo Furuta, Takayuki Watanabe, Jumpei Hayashi, Nobuhiro Kumada
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Publication number: 20120319533Abstract: Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15?c/a?1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.Type: ApplicationFiled: February 28, 2011Publication date: December 20, 2012Applicants: KYOTO UNIVERSITY, CANON KABUSHIKI KAISHAInventors: Makoto Kubota, Kenichi Takeda, Jumpei Hayashi, Mikio Shimada, Yuichi Shimakawa, Masaki Azuma, Yoshitaka Nakamura, Masanori Kawai
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Patent number: 8273675Abstract: Provided is a ferroelectric ceramic material containing BaTiO3 as a main component which can control a Curie temperature in a wide range, has no phase transition in the vicinity of a room temperature, and exhibits excellent ferroelectric characteristics. The ferroelectric ceramic material includes an oxide represented by the formula: (100?a?b)BaTiO3.aBi2O3.bM2O3, where M represents a trivalent metal other than Bi, and a and b satisfy 1?a?15, 0?b?5, and 5?a+3b?15 and M is preferably a trivalent metal selected from fifth period transition metals or rare earth metals having an atomic number of 59 or higher to 69 or lower.Type: GrantFiled: September 25, 2009Date of Patent: September 25, 2012Assignee: Canon Kabushiki KaishaInventors: Zuyi Zhang, Jumpei Hayashi, Kenji Takashima, Tatsuo Furuta
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Publication number: 20120162319Abstract: Provided is a piezoelectric material including a bismuth barium niobium oxide-based tungsten bronze structure metal oxide having a high Curie temperature and being excellent in piezoelectric property. The piezoelectric material includes a metal oxide having a tungsten bronze structure represented by the following general formula (1), in which the metal oxide having a tungsten bronze structure includes Li, and a content of the Li is 0.015 weight percent or more and 0.600 weight percent or less in terms of metal with respect to 100 parts by weight of the metal oxide: AxB100O30??(1) where A represents Ba and Bi, or at least one kind or more of elements selected from the group consisting of: Na, Sr, and Ca in addition to Ba and Bi; B represents Nb, or Nb and Ta; and x represents a numerical value of 4.5<x<5.5.Type: ApplicationFiled: September 28, 2010Publication date: June 28, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Jumpei Hayashi, Takayuki Watanabe, Takanori Matsuda, Kaoru Miura, Makoto Kubota
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Patent number: 8198199Abstract: There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1?y)B??(1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3?(1?x)BO2??(2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.Type: GrantFiled: March 5, 2008Date of Patent: June 12, 2012Assignees: Canon Kabushiki Kaisha, Tokyo Institute of TechnologyInventors: Jumpei Hayashi, Takanori Matsuda, Tetsuro Fukui, Hiroshi Funakubo
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Publication number: 20120043853Abstract: A compound having a tungsten bronze structure exhibiting a high Curie temperature, good insulating resistance and mechanical quality factor, and excellent piezoelectric properties is provided. The compound contains a tungsten bronze structure oxide represented by general formula (1): x(BaB2O6)-y(CaB2O6)-z{(Bi1/2C1/2)B2O6}??(1) where B represents at least one of Nb and Ta; C represents at least one of Na and K; x+y+z=1; x satisfies 0.2?x?0.85; y satisfies 0?y?0.5; and z satisfies 0<z?0.8.Type: ApplicationFiled: April 27, 2010Publication date: February 23, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Takayuki Watanabe, Jumpei Hayashi
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Patent number: 8034250Abstract: Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): xABO3-yA?BO3-zA?B?O3 in which A is a Bi element; A? is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A? is at least one element selected from Ba, Sr and Ca; B? is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x+y+z=1.Type: GrantFiled: March 18, 2009Date of Patent: October 11, 2011Assignee: Canon Kabushiki KaishaInventors: Jumpei Hayashi, Zuyi Zhang, Toshihiro Ifuku, Satoshi Wada, Keisuke Yamato, Nobuhiro Kumada, Masaki Azuma, Hiroshi Funakubo, Takashi Iijima, Soichiro Okamura
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Publication number: 20110193451Abstract: Provided is a manufacturing method for preferentially-oriented oxide ceramics having a high degree of crystal orientation. The manufacturing method includes: obtaining slurry containing an oxide crystal B having magnetic anisotropy; applying a magnetic field to the oxide crystal B, and obtaining a compact of the oxide crystal B; and subjecting the compact to oxidation treatment to obtain preferentially-oriented oxide ceramics including a compact of an oxide crystal C having a crystal system that is different from a crystal system of one of a part and a whole of the oxide crystal B. By (1) reacting raw materials, (2) reducing the oxide crystal A, or (3) keeping the oxide crystal A at high temperature and quenching the oxide crystal A, the oxide crystal B is obtained to be used in the slurry.Type: ApplicationFiled: February 8, 2011Publication date: August 11, 2011Applicants: CANON KABUSHIKI KAISHA, University of YamanashiInventors: Takayuki Watanabe, Makoto Kubota, Jumpei Hayashi, Nobuhiro Kumada, Tomoaki Mochiduki
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Publication number: 20110079883Abstract: Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of ?10° or more to +10° or less with respect to the perpendicular direction.Type: ApplicationFiled: September 24, 2010Publication date: April 7, 2011Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY, KYOTO UNIVERSITYInventors: MIKIO SHIMADA, TOSHIAKI AIBA, TOSHIHIRO IFUKU, JUMPEI HAYASHI, MAKOTO KUBOTA, HIROSHI FUNAKUBO, YUICHI SHIMAKAWA, MASAKI AZUMA, YOSHITAKA NAKAMURA
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Publication number: 20110012050Abstract: Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): xABO3-yA?BO3-zA?B?O3 in which A is a Bi element; A? is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A? is at least one element selected from Ba, Sr and Ca; B? is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x+y+z=1.Type: ApplicationFiled: March 18, 2009Publication date: January 20, 2011Applicants: UNIVERSITY OF YAMANASHI, KYOTO UNIVERSITY, TOKYO INSTITUTE OF TECHNOLOGY, CANON KABUSHIKI KAISHA, Tokyo University of Science Educational Foundation Administrative Organization, National Institute of Advanced Industrial Science and TechnologyInventors: Jumpei Hayashi, Zuyi Zhang, Toshihiro Ifuku, Satoshi Wada, Keisuke Yamato, Nobuhiro Kumada, Masaki Azuma, Hiroshi Funakubo, Takashi Iijima, Soichiro Okamura
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Publication number: 20100081559Abstract: Provided is a ferroelectric ceramic material containing BaTiO3 as a main component which can control a Curie temperature in a wide range, has no phase transition in the vicinity of a room temperature, and exhibits excellent ferroelectric characteristics. The ferroelectric ceramic material includes an oxide represented by the formula: (100?a?b)BaTiO3.aBi2O3.bM2O3, where M represents a trivalent metal other than Bi, and a and b satisfy 1?a?15, 0?b?5, and 5?a+3b?15 and M is preferably a trivalent metal selected from fifth period transition metals or rare earth metals having an atomic number of 59 or higher to 69 or lower.Type: ApplicationFiled: September 25, 2009Publication date: April 1, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Zuyi Zhang, Jumpei Hayashi, Kenji Takashima, Tatsuo Furuta
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Publication number: 20100052113Abstract: There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1?y)B??(1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3?(1?x)BO2??(2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.Type: ApplicationFiled: March 5, 2008Publication date: March 4, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Jumpei Hayashi, Takanori Matsuda, Tetsuro Fukui, Hiroshi Funakubo