Patents by Inventor Jumpei Imoto

Jumpei Imoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photoelectric transducer and manufacturing method therefor
    Patent number: 8338903
    Abstract: The surrounding length of a junction separation portion can be shortened to improve an insulating resistance in order to provide a solar cell with highly efficiency. In a photoelectric transducer of the type where a light-receiving surface electrode is wired to another electrode on a back surface via a through electrode passing through a semiconductor substrate of a first conductive type, the photoelectric transducer comprises: a junction separation portion made around the through electrode on a back surface of the semiconductor substrate; a dielectric layer formed for covering the junction separation portion, the through electrode penetrating the dielectric layer; and a back electrode provided on the dielectric layer and coupled to the through electrode which is connected to the light-receiving surface electrode.
    Type: Grant
    Filed: October 30, 2008
    Date of Patent: December 25, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tsutomu Yamazaki, Satoshi Okamoto, Jumpei Imoto
  • PHOTOELECTRIC TRANSDUCER AND MANUFACTURING METHOD THEREFOR
    Publication number: 20100252903
    Abstract: The surrounding length of a junction separation portion can be shortened to improve an insulating resistance in order to provide a solar cell with highly efficiency. In a photoelectric transducer of the type where a light-receiving surface electrode is wired to another electrode on a back surface via a through electrode passing through a semiconductor substrate of a first conductive type, the photoelectric transducer comprises: a junction separation portion made around the through electrode on a back surface of the semiconductor substrate; a dielectric layer formed for covering the junction separation portion, the through electrode penetrating the dielectric layer; and a back electrode provided on the dielectric layer and coupled to the through electrode which is connected to the light-receiving surface electrode.
    Type: Application
    Filed: October 30, 2008
    Publication date: October 7, 2010
    Inventors: Tsutomu Yamazaki, Satoshi Okamoto, Jumpei Imoto