Abstract: There is provided a method for storing a fluorine-containing nitrogen compound that prevents the progress of decomposition of the fluorine-containing nitrogen compound during storage. The fluorine-containing nitrogen compound, which is at least one type among nitrosyl fluoride, nitroyl fluoride, and trifluoroamine-N-oxide, contains or does not contain at least one type among manganese, cobalt, nickel, and silicon as metal impurities. When any of the foregoing is contained, the fluorine-containing nitrogen compound is stored in a container with the total concentration of the manganese, the cobalt, the nickel, and the silicon set to 1000 ppb by mass or less.

Abstract: There is provided a method for storing a fluorine-containing nitrogen compound that prevents the progress of a reaction of the fluorine-containing nitrogen compound during storage. A fluorine-containing nitrogen compound containing nitrosyl fluoride and nitroyl fluoride contains or does not contain at least one type among sodium, potassium, magnesium, and calcium as metal impurities. When any of the foregoing is contained, the fluorine-containing nitrogen compound is stored in a container with the total concentration of the sodium, the potassium, the magnesium, and the calcium set to 1000 ppb by mass or less.

Abstract: There is provided a method for analyzing gas containing nitrosyl fluoride capable of highly accurately and safely quantitatively determining oxygen gas and nitrogen gas contained in mixed gas containing nitrosyl fluoride and at least one of the oxygen gas and the nitrogen gas. The method for analyzing gas containing nitrosyl fluoride includes: a conversion step of bringing the mixed gas into contact with a reactant reacting with the nitrosyl fluoride to generate nitrogen oxide, and converting the nitrosyl fluoride into the nitrogen oxide by a reaction between the nitrosyl fluoride and the reactant; a removal step of bringing the gas after the conversion step into contact with an adsorbent adsorbing the nitrogen oxide, and removing the nitrogen oxide from the gas by the adsorption of the nitrogen oxide; and an analysis step of analyzing the gas after the removal step and quantitatively determining the oxygen gas and the nitrogen gas.

Abstract: Provided is a dry etching method capable of selectively etching an etching object containing lanthanum as compared with a non-etching object at a sufficient etching rate without plasma. The dry etching method includes a dry etching step of bringing an etching gas containing nitrosyl fluoride into contact with a member to be etched (12) having an etching object that is to be etched by the etching gas and having a non-etching object that is not to be etched by the etching gas, to selectively etch the etching object as compared with the non-etching object without plasma. The etching object contains lanthanum.

Abstract: Provided are an etching gas and an etching method, which are capable of selectively etching an etching object having silicon nitride in comparison with a non-etching object. The etching gas contains nitrosyl fluoride and also contains nitryl fluoride as an impurity, in which the concentration of nitryl fluoride is 0.0001 ppm by mass or more and 100 ppm by mass or less. The etching method includes an etching step of bringing this etching gas into contact with a member to be etched (12) having an etching object, which is an object of etching by the etching gas, and a non-etching object, which is not an object to be etched by the etching gas, and selectively etching the etching object in comparison with the non-etching object. The etching object has silicon nitride.

Abstract: An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, an average thickness of the resin layer is 0.6 ?m or more and 1.4 ?m or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an exposed area ratio of the magnetic particles is 0.1% or more and 4.0% or less, an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: A carrier for electrostatic image development includes: a core material; and a coating resin layer that contains inorganic particles and covers the core material. The content of the inorganic particles is 10% by mass or more and 60% by mass or less based on the total mass of the coating resin layer. The volume average diameter D (?m) of the inorganic particles and the thickness T (?m) of the coating resin layer satisfy the following relational expression (1): 0.007?D/T?0.24.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, an average thickness of the resin layer is 0.6 ?m or more and 1.4 ?m or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an exposed area ratio of the magnetic particles is 0.1% or more and 4.0% or less, an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: A carrier for electrostatic image development includes: a core material; and a coating resin layer that contains inorganic particles and covers the core material. The content of the inorganic particles is 10% by mass or more and 60% by mass or less based on the total mass of the coating resin layer. The volume average diameter D (?m) of the inorganic particles and the thickness T (?m) of the coating resin layer satisfy the following relational expression (1): 0.007?D/T?0.24.