Abstract: An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, an average thickness of the resin layer is 0.6 ?m or more and 1.4 ?m or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an exposed area ratio of the magnetic particles is 0.1% or more and 4.0% or less, an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: A carrier for electrostatic image development includes: a core material; and a coating resin layer that contains inorganic particles and covers the core material. The content of the inorganic particles is 10% by mass or more and 60% by mass or less based on the total mass of the coating resin layer. The volume average diameter D (?m) of the inorganic particles and the thickness T (?m) of the coating resin layer satisfy the following relational expression (1): 0.007?D/T?0.24.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, an average thickness of the resin layer is 0.6 ?m or more and 1.4 ?m or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: An electrostatic charge image developing carrier includes: magnetic particles; and a resin layer coating the magnetic particles and containing inorganic particles, in which an exposed area ratio of the magnetic particles is 0.1% or more and 4.0% or less, an average particle diameter of the inorganic particles is 5 nm or more and 90 nm or less, and a ratio B/A of a surface area B of the electrostatic charge image developing carrier to a plan view area A of the electrostatic charge image developing carrier is 1.020 or more and 1.100 or less when a surface of the electrostatic charge image developing carrier is three-dimensionally analyzed.

Abstract: A carrier for electrostatic image development includes: a core material; and a coating resin layer that contains inorganic particles and covers the core material. The content of the inorganic particles is 10% by mass or more and 60% by mass or less based on the total mass of the coating resin layer. The volume average diameter D (?m) of the inorganic particles and the thickness T (?m) of the coating resin layer satisfy the following relational expression (1): 0.007?D/T?0.24.