Abstract: A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of ?1 or more, and a protective film is provided on the light extraction face.

Abstract: A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of ?1 or more, and a protective film is provided on the light extraction face.

Abstract: A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.

Abstract: A resistor is provided with a resistance body and a pair of electrodes connected to the resistance body (a first electrode body, a second electrode body), the resistance body being arranged so as to be at least separated away from a substrate board (a circuit board) when mounted on the substrate board (the circuit board), wherein the resistor has the oxide film on at least one of the resistance body and each of the electrodes (the first electrode body, the second electrode body) at a boundary portion (a bonded portion, a bonded portion) between the resistance body and each of the electrodes (the first electrode body, the second electrode body) on the mounting surface of the resistor.

Abstract: A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern.

Abstract: To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting device 100 according to the present disclosure includes a conductive support substrate 80; a metal layer 60 containing a reflective metal provided on the conductive support substrate 10; a semiconductor laminate 30 formed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer 60; an n-type InGaAs contact layer 20A provided on the semiconductor laminate 30; and an n-side electrode 93 provided on the n-type InGaAs contact layer 20A, wherein the center emission wavelength of light emitted from the semiconductor laminate 30 is 1000 to 2200 nm.

Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.

Abstract: Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.

Abstract: A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern.

Abstract: To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting device 100 according to the present disclosure includes a conductive support substrate 80; a metal layer 60 containing a reflective metal provided on the conductive support substrate 10; a semiconductor laminate 30 formed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer 60; an n-type InGaAs contact layer 20A provided on the semiconductor laminate 30; and an n-side electrode 93 provided on the n-type InGaAs contact layer 20A, wherein the center emission wavelength of light emitted from the semiconductor laminate 30 is 1000 to 2200 nm.

Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.

Abstract: Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.

Abstract: As an embodiment of the present invention, there is provided an information terminal comprising: an input/output part for performing input and output with respect to an image storage device for storing image information captured by an imaging terminal; a storage part for associating and storing image identification information for identifying the image information, summary image information that includes less information than the image information, and device identification information for identifying the image storage device; and a display part; wherein the device identification information stored in the storage part is displayed by the display part, the summary image information that is associated with device identification information selected from the device identification information displayed by the display part is displayed by the display part, and the image information associated with the summary image information selected from the summary image information displayed by the display part is displayed b

Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate 30 on the InP growth substrate; a step of bonding the semiconductor laminate 30 to the support substrate 80 formed from a Si substrate, with at least the metal bonding layer 70 therebetween; and a step of removing the InP growth substrate 10.

Abstract: As an embodiment of the present invention, there is provided an information terminal comprising: an input/output part for performing input and output with respect to an image storage device for storing image information captured by an imaging terminal; a storage part for associating and storing image identification information for identifying the image information, summary image information that includes less information than the image information, and device identification information for identifying the image storage device; and a display part; wherein the device identification information stored in the storage part is displayed by the display part, the summary image information that is associated with device identification information selected from the device identification information displayed by the display part is displayed by the display part, and the image information associated with the summary image information selected from the summary image information displayed by the display part is displayed b

Abstract: As an embodiment of the present invention, there is provided an information terminal comprising: an input/output part for performing input and output with respect to an image storage device for storing image information captured by an imaging terminal; a storage part for associating and storing image identification information for identifying the image information, summary image information that includes less information than the image information, and device identification information for identifying the image storage device; and a display part; wherein the device identification information stored in the storage part is displayed by the display part, the summary image information that is associated with device identification information selected from the device identification information displayed by the display part is displayed by the display part, and the image information associated with the summary image information selected from the summary image information displayed by the display part is displayed b

Abstract: A mobile terminal is provide including a first sending and receiving means for communicating with a server via a first network, a second sending and receiving means for communicating with the server via a second network having a slower speed than the first network, an imaging means, and a display The imaging means generates first real image data, first summary image data is generated from the first real image data, the second sending and receiving means sends the first summary image data to a data terminal, the second sending and receiving means receives second summary image data generated from second real image data generated by the data terminal, the second summary image data is stored in the memory card and the display simultaneously performs a first image display for expressing the first real image data and a second image display for expressing the second summary image data.

Abstract: As an embodiment of the present invention, there is provided an information terminal comprising: an input/output part for performing input and output with respect to an image storage device for storing image information captured by an imaging terminal; a storage part for associating and storing image identification information for identifying the image information, summary image information that includes less information than the image information, and device identification information for identifying the image storage device; and a display part; wherein the device identification information stored in the storage part is displayed by the display part, the summary image information that is associated with device identification information selected from the device identification information displayed by the display part is displayed by the display part, and the image information associated with the summary image information selected from the summary image information displayed by the display part is displayed b

Abstract: An execution environment software application allows a computer to function as an identification information storage means for storing identification information about applications, identification information searching means for searching the identification information storage means for the identification information specified by a first application being executed, and an application execution instructing means for delivering predetermined delivery information created depending on the result of the execution of the first application of when the identification information is specified to a second application corresponding to the identification information and giving an instruction to execute the second application using the delivery information.

Abstract: A terminal device is provided with a context information storing means for storing context information on a prescribed memory medium, a Cookie receiving means for receiving a Cookie to request specific context information in the case of communication with an outside server, a context information extracting means for extracting the specific context information from the prescribed memory medium in accordance with the received Cookie, and a transmitting means for transmitting the extracted context information to the outside server.