Abstract: A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

Abstract: There is provided a SAW filter manufacturing method for manufacturing a SAW filter from a piezoelectric substrate having planned dividing lines set on a top surface of the piezoelectric substrate, and having a device including comb-shaped electrodes in regions demarcated by the planned dividing lines. The method includes a structure forming step of forming a structure having projections and depressions on an undersurface side of the piezoelectric substrate by irradiating the piezoelectric substrate with a laser beam of a wavelength absorbable by the piezoelectric substrate from the undersurface side of the piezoelectric substrate, and a dividing step of dividing the piezoelectric substrate along the planned dividing lines after the structure forming step.

Abstract: A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

Abstract: A BAW device includes a substrate and a piezoelectric element formed on a surface of the substrate. The substrate has a plurality of elastic wave diffusing regions disposed therein for diffusing an elastic wave, the elastic wave diffusing regions being formed by modifying the inside of the substrate with a laser beam.

Abstract: A BAW device including a substrate, and a piezoelectric element formed on a front surface of the substrate is provided. The substrate is provided on a back surface side thereof with an acoustic wave diffusion region including a recess formed by partially melting a back surface of the substrate.

Abstract: A BAW device includes a substrate and a piezoelectric element formed on a surface of the substrate. The substrate has a plurality of elastic wave diffusing regions disposed therein for diffusing an elastic wave, the elastic wave diffusing regions being formed by modifying the inside of the substrate with a laser beam.

Abstract: A SAW device wafer has a crystal substrate having a front side partitioned into a plurality of regions by a plurality of crossing division lines, a pair of comblike electrodes formed in each region defined on the front side of the crystal substrate by the division lines, and a cover layer formed of resin for covering the whole of the front side of the crystal substrate. The SAW device is manufactured by forming a laser processed groove on the cover layer along each division line, the laser processed groove having a depth not reaching the crystal substrate, forming a modified layer inside the crystal substrate along each division line, and applying an external force to the SAW device wafer, thereby dividing the SAW device wafer along each division line to obtain the plural SAW devices.

Abstract: A wafer dividing apparatus for dividing a wafer along a plurality of crossing streets in the condition where the wafer is attached to the upper surface of a dicing tape supported to an annular frame and the strength of the wafer is reduced along the streets. The wafer dividing apparatus includes a frame holding unit for holding the annular frame, a wafer holding table having a holding surface for holding the wafer through the dicing tape supported to the annular frame held by the frame holding unit, a tape expanding unit for relatively moving the frame holding unit and the wafer holding table in a direction perpendicular to the holding surface of the wafer holding table to thereby expand the dicing tape, and a vibration generating unit for applying vibration to the holding surface of the wafer holding table.

Abstract: A wafer dividing method including a step of applying a laser beam to a wafer along division lines with the focal point of the laser beam set inside the wafer, thereby forming modified layers inside the wafer along the division lines; a step of attaching an adhesive tape to the wafer, the adhesive tape having a base sheet and an adhesive layer; a dividing step of applying an external force to the wafer by expanding the adhesive tape, thereby dividing the wafer along the division lines to obtain a plurality of device chips; and a debris catching step of heating the adhesive tape to thereby soften the adhesive layer such that it enters the space between any adjacent ones of the device chips obtained by the dividing step, thereby catching debris generated on the side surface of each device chip in the dividing step to the adhesive layer by adhesion.

Abstract: A wafer dividing method including a step of applying a laser beam to a wafer along division lines with the focal point of the laser beam set inside the wafer, thereby forming modified layers inside the wafer along the division lines; a step of attaching an adhesive tape to the wafer, the adhesive tape having a base sheet and an adhesive layer; a dividing step of applying an external force to the wafer by expanding the adhesive tape, thereby dividing the wafer along the division lines to obtain a plurality of device chips; and a debris catching step of heating the adhesive tape to thereby soften the adhesive layer such that it enters the space between any adjacent ones of the device chips obtained by the dividing step, thereby catching debris generated on the side surface of each device chip in the dividing step to the adhesive layer by adhesion.

Abstract: A MEMS device manufacturing method including a break start point forming step of forming a break start point in a substrate along the areas corresponding to a plurality of crossing streets set on the substrate before forming a plurality of MEMS devices on the substrate, a device forming step of forming the MEMS devices in a plurality of areas partitioned by the areas corresponding to the crossing streets on the front side of the substrate after performing the break start point forming step, and a substrate breaking step of applying an external force to the substrate after performing the device forming step to thereby break the substrate along the areas corresponding to the crossing streets where the break start point is formed, thus dividing the substrate into the individual MEMS devices.

Abstract: A wafer dividing apparatus for dividing a wafer along a plurality of crossing streets in the condition where the wafer is attached to the upper surface of a dicing tape supported to an annular frame and the strength of the wafer is reduced along the streets. The wafer dividing apparatus includes a frame holding unit for holding the annular frame, a wafer holding table having a holding surface for holding the wafer through the dicing tape supported to the annular frame held by the frame holding unit, a tape expanding unit for relatively moving the frame holding unit and the wafer holding table in a direction perpendicular to the holding surface of the wafer holding table to thereby expand the dicing tape, and a vibration generating unit for applying vibration to the holding surface of the wafer holding table.