Patents by Inventor Jun Araseki

Jun Araseki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field-effect semiconductor device and method for making the same
    Patent number: 7244973
    Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1?x?yN, wherein x+y=1, 0?x?1, and 0?y?1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: July 17, 2007
    Assignee: Sony Corporation
    Inventors: Satoshi Taniguchi, Toshikazu Suzuki, Hideki Ono, Jun Araseki
  • Field-effect semiconductor device and method for making the same
    Patent number: 7160766
    Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1?x?yN, wherein x+y=1, 0?x?1, and 0?y?1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: January 9, 2007
    Assignee: Sony Corporation
    Inventors: Satoshi Taniguchi, Toshikazu Suzuki, Hideki Ono, Jun Araseki
  • Field-effect semiconductor device and method for making the same
    Publication number: 20050127398
    Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1?x?yN, wherein x+y=1, 0?x?1, and 0?y?1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.
    Type: Application
    Filed: January 21, 2005
    Publication date: June 16, 2005
    Applicant: Sony Corporation
    Inventors: Satoshi Taniguchi, Toshikazu Suzuki, Hideki Ono, Jun Araseki
  • Field-effect semiconductor device and method for making the same
    Patent number: 6870203
    Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1-x-yN, wherein x+y=1, 0?x?1, and 0?y?1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.
    Type: Grant
    Filed: November 5, 2002
    Date of Patent: March 22, 2005
    Assignee: Sony Corporation
    Inventors: Satoshi Taniguchi, Toshikazu Suzuki, Hideki Ono, Jun Araseki
  • Field-effect semiconductor device and method for making the same
    Publication number: 20040155259
    Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1-x-yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.
    Type: Application
    Filed: February 6, 2004
    Publication date: August 12, 2004
    Applicant: Sony Corporation
    Inventors: Satoshi Taniguchi, Toshikazu Suzuki, Hideki Ono, Jun Araseki
  • Field-effect semiconductor device and method for making the same
    Publication number: 20030107065
    Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1-x-yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.
    Type: Application
    Filed: November 5, 2002
    Publication date: June 12, 2003
    Applicant: Sony Corporation
    Inventors: Satoshi Taniguchi, Toshikazu Suzuki, Hideki Ono, Jun Araseki