Abstract: This disclosure provides a method and a system for detecting and recognizing a target object in a real-time video. The method includes: determining whether a target object recognition result RX-1 of a previous frame of image of a current frame of image is the same as a target object recognition result RX-2 of a previous frame of image of the previous frame of image; performing target object position detection in the current frame of image by using a first-stage neural network to obtain a position range CX of a target object in the current frame of image when the two recognition results RX-1 and RX-2 are different; or determining a position range CX of a target object in the current frame of image according to a position range CX-1 of the target object in the previous frame of image when the two recognition results RX-1 and RX-2 are the same; and performing target object recognition in the current frame of image according to the position range CX by using a second-stage neural network.

Abstract: Disclosed are novel pharmaceutical salts and polymorphic forms of (R)—N-(5-((4-((5-chloro-4-fluoro-2-(2-hydroxypropan-2-yl)phenyl)amino)pyrimidin-2-yl)amino)-2-(3-(dimethylamino)pyrrolidin-1-yl)-4-methoxyphenyl)acrylamide (Compound I) that has inhibitory activities against ErbBs (e.g. EGFR or Her2) and/or BTK, especially mutant forms of ErbBs, and/or BTK. Further disclosed herein are the processes for the preparation of pharmaceutical salts and polymorphic forms of Compound I, and uses of such pharmaceutical salts and polymorphic forms of Compound I in inhibiting the ErbB or BTK.

Abstract: The invention relates to a terahertz dual-comb spectrum stabilization system, including an optical loop for coupling a first optical frequency comb signal (OFCS) to a second OFCS; and a frequency mixer for performing frequency mixing on the coupled first OFCS and second OFCS to generate a dual-comb signal. A local oscillator signal end of the frequency mixer is connected to a multi-chain frequency multiplication chain, the multi-chain frequency multiplication chain is used for performing frequency multiplication processing on a radio frequency signal, a local oscillator frequency in terahertz frequency range is generated the local oscillator frequency in terahertz frequency range is respectively mixed with the first OFCS and the second OFCS in the frequency mixer, and two down-converted OFCSs are generated in microwave frequency range. One line of comb teeth of the two down-converted OFCSs are respectively locked to obtain a stable multi-heterodyne dual-comb spectrum.

Abstract: Disclosed are a rare earth rotary target and a preparation method therefor. The rare earth rotary target includes a back tube and at least one rare earth target tube welded outside of the back tube; and the back tube and the rare earth target tube are welded via an intermediate welding layer. The intermediate welding layer includes a metal indium solder and an aluminum sheet arranged in the metal indium solder. The aluminum content in the intermediate welding layer is 3-10 wt. %. The back tube, the aluminum sheet, and the rare earth target tube are concentric cylindrical structures. According to the technical solution of the present application, the melting point of the solder is increased, thus achieving the purpose of improving the sputtering power density and a target utilization rate of rare earth rotary targets.

Abstract: Disclosed are a co-sputtering rare earth rotating target material, and a preparation method and an application method therefor. The co-sputtering rare earth rotating target material includes two sections of end target tubes arranged at an axial end of the target material, and a plurality of sections of rare earth target tubes and a plurality of sections of co-sputtering target tubes which are arranged between the two sections of end target tubes and with a target material along an axial middle region, wherein the plurality of sections of rare earth target tubes are spaced apart from the plurality of sections of co-sputtering target tubes, and the target tubes are mutually assembled via welding; and the co-sputtering target tubes are selected from at least one of aluminum, copper, nickel, iron and praseodymium target tubes, and the end target tubes are non-rare earth target tubes or rare earth target tubes.

Abstract: A voltage-controlled three-terminal magnon transistor is provided, including a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. After a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal is made of a heavy metal material, which can convert the magnon in the magnetic layer into a charge flow. When a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, non-volatile polarization and non-volatile strain states of the ferroelectric layer change, which in turn affects a transmission capability of the magnon in the magnetic layer based on a magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer. In addition, a voltage signal of the detection terminal exhibits a regular loop change behavior with a change of the voltage pulse.

Abstract: A preparation of solid-state electrolytes, in particular to an Al-doped sheet LLZO composite solid-state electrolyte and a preparation method and application thereof. The composite solid-state electrolyte includes Al ions, an LLZO solid-state electrolyte and a polymer substrate. The Al is doped in the LLZO solid-state electrolyte in a sheet structure, and the LLZO solid-state electrolyte is dispersed in the polymer substrate. The composite solid-state electrolyte has good flexibility, and has higher ionic conductivity than the granular doped composite solid-state electrolyte since the sheet LLZO provides a fast conduction channel for lithium ions. In addition, the preparation method is simple, suitable for large-scale production, and environmentally friendly since no toxic solvent is used in the preparation process.

Abstract: A voltage-controlled three-terminal magnon transistor is provided, including a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. After a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal is made of a heavy metal material, which can convert the magnon in the magnetic layer into a charge flow. When a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, non-volatile polarization and non-volatile strain states of the ferroelectric layer change, which in turn affects a transmission capability of the magnon in the magnetic layer based on a magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer. In addition, a voltage signal of the detection terminal exhibits a regular loop change behavior with a change of the voltage pulse.

Abstract: A gesture recognition method includes: acquiring a target image containing a gesture to be recognized; inputting the target image to a gesture recognition model that has a first sub-model, a second sub-model, and a third sub-model, the first sub-model is to determine a gesture category and a gesture center point, the second sub-model is to determine an offset of the gesture center point, and the third sub-model is to determine a length and a width of a bounding box for the gesture to be recognized; acquiring an output result from the gesture recognition model, the output result includes the gesture category, the gesture center point, and the offset of the gesture center point, and the length and the width of the bounding box; and determining the gesture category and a position of the bounding box of the gesture to be recognized according to the output result.

Abstract: Provided is a gate driving circuit. The gate driving circuit includes a plurality of first transistors; wherein at least one first target transistor of the plurality of first transistors includes a first light-shielding layer disposed on a side of a base substrate, the first light-shielding layer being made of a conductive material; and a first gate metal layer and a first source/drain metal layer disposed on a side of the first light-shielding layer away from the base substrate; wherein the first light-shielding layer is connected to the first gate metal layer.

Abstract: A diagnostic method and system for measuring potential and electric field of plasma are provided. According to operation parameters of a magnetic confinement fusion device and relevant parameter data of a plurality of candidate particle elements, signal-noise ratios are calculated. to select a neutral beam particle element. Beam trajectories varying in incident velocity, incident angle and sampling area are obtained by iterative calculation, and a preset parameter which enables the beam trajectories to pass through an entrance slit of an analyzer is obtained. A neutral beam that meets the preset parameter is injected into the plasma. An energy of the primary beam generated by collision ionization in a sampling area is measured, and potential of the sampling area is obtained according to law of conservation of energy. Sampling areas are detected to obtain potential spatial distribution of the plasma and a radial electric field, and the diagnostic is finished.

Abstract: A method includes: performing target detection on a current image to obtain detection information of a plurality of detected targets; obtaining position prediction information of each of a plurality of tracked targets and a number of times of tracking losses of targets from tracking information of each of the tracked targets, and determining a first matching threshold for each of the tracked targets according to the number of times of tracking losses of targets; calculating a motion matching degree between each of the tracked targets and each of the detected targets according to the position detection information and the position prediction information; for each of the tracked targets, obtaining a motion matching result according to the motion matching degree and the first matching threshold corresponding to the tracked target; and matching the detected targets and the tracked targets according to the motion matching results to obtain a tracking result.

Abstract: The present disclosure provides a display substrate, a method for manufacturing the same, and a display device. The display substrate includes a drive circuit layer disposed on a base substrate and a light emitting structure layer disposed on a side of the drive circuit layer away from the base substrate. The light emitting structure layer includes an anode, an organic light emitting layer, a cathode, and an auxiliary electrode. The organic light emitting layer is respectively connected to the anode and the cathode, and the cathode is connected to the auxiliary electrode; in a plane parallel to the display substrate, an edge of the auxiliary electrode is provided with a structure depressed towards a center of the auxiliary electrode.

Abstract: A display substrate includes a driving circuit layer arranged on a base and a light emitting structure layer arranged on one side, away from the base, of the driving circuit layer; the light emitting structure layer includes an anode, a pixel definition layer, an organic light emitting layer, a cathode, and an auxiliary electrode; the pixel definition layer has a first pixel opening exposing the anode and a second pixel opening exposing the auxiliary electrode; the organic light emitting layer connected to the anode and the cathode connected to the organic light emitting layer are arranged in the first pixel opening; the organic light emitting layer separated from the auxiliary electrode and the cathode located on one side, away from the base, of the organic light emitting layer are arranged in the second pixel opening; and the cathode is connected to the auxiliary electrode in the second pixel opening.

Abstract: A thin film transistor, including: at least one active layer pattern including a first conductive pattern, a second conductive pattern, and a semiconductor pattern; a gate on a side of the active layer pattern; a first electrode and a second electrode on a side of the gate away from the active layer pattern, and respectively electrically connected with the first conductive pattern and the second conductive pattern, a conductive shielding pattern is provided corresponding to the semiconductor pattern in at least one active layer pattern, the conductive shielding pattern is on a side of the semiconductor pattern away from the gate and is electrically connected with the first electrode, and a buffer layer is between the conductive shielding pattern and the semiconductor pattern; an orthographic projection of the conductive shielding pattern on a plane where the semiconductor pattern corresponding thereto is located at least partially covers the semiconductor pattern corresponding.

Abstract: A hybrid power system including a transmission module, a motor, an engine generator, an energy storage module, and an electrical energy distributor is disclosed. The motor is connected to the transmission module. The electrical energy distributor is coupled to the motor. The engine generator is coupled to the electrical energy distributor. The engine generator is adapted to rotate at a constant speed to generate a first power, and the first power is transmitted to the motor and the energy storage module by the electrical energy distributor.

Abstract: The present invention relates to compounds of Formula I and Formula II and the use thereof in the treatment of metabolic diseases such as liver fibrosis and non-alcoholic hepatitis. Specifically, provided are the compounds as shown, and pharmaceutically acceptable salts or esters, prodrug, stereoisomers, hydrates, solvates, crystalline forms and metabolite forms thereof, or any combination or mixture thereof in the preparation of a drug or reagent, the drug being used for at least one of the following: A-(L1)x-A? (Formula I); A1-(L1); -A1? (Formula II).

Abstract: A memory device is provided, including at least one bit cell, a pair of transistors, and a voltage generation circuit. The voltage generation circuit is coupled to the negative voltage line and is configured to pull down a voltage of at least one of the pair of data lines to a negative voltage level through the negative voltage line. The voltage generation circuit includes a first capacitive unit, a second capacitive unit, and a switch circuit. The first capacitive unit includes a first capacitor. The second capacitive unit includes a second capacitor. The switch circuit is configured to connect the first capacitor, the second capacitor, or the combination thereof to the negative voltage line in response to a first kick signal and a second kick signal that are different from each other.

Abstract: A fused ring acceptor material includes a structure of following formula (I).

Abstract: A terminating apparatus for terminating a plurality of wires of a cable to a plurality of connection terminations of a communication module, the communication module comprises at least one upright walls each provided with at least one receiving slots for receiving the connection terminations each of which is electrically connected with one wire. The terminating apparatus comprises: at least one terminating portion into which the upright walls of the communication module are able to be inserted, each terminating portion separately holding the plurality of wires of the cable; and at least one cutting apparatus mounted in the terminating portions outside the receiving slot of the communication module and constructed to cut off parts of the wires which extend out the receiving slots after the wires are terminated to the connection terminations of the communication module. The wires may be easily and quickly terminated to the communication module.