Patents by Inventor Jun-Chieh WANG

Jun-Chieh WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955245
    Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: April 9, 2024
    Assignees: Acer Incorporated, National Yang Ming Chiao Tung University
    Inventors: Chun-Hsien Li, Szu-Chieh Wang, Andy Ho, Liang-Kung Chen, Jun-Hong Chen, Li-Ning Peng, Tsung-Han Yang, Yun-Hsuan Chan, Tsung-Hsien Tsai
  • Publication number: 20240087644
    Abstract: A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes alternately performing dense set operations and dense reset operations on the target memory cell, wherein the dense set operation includes applying a dense switching gate voltage and a dense set bit line voltage; and performing a normal set operation on the target memory cell, wherein the normal set operation includes applying a normal set gate voltage and a normal set bit line voltage to the target memory cell, the normal set gate voltage is greater than the pre-forming gate voltage and the dense switching gate voltage, and the normal set bit line voltage is less than the pre-forming bit line voltage and the dense set bit line voltage.
    Type: Application
    Filed: August 29, 2023
    Publication date: March 14, 2024
    Applicant: Winbond Electronics Corp.
    Inventors: I-Hsien Tseng, Lung-Chi Cheng, Ju-Chieh Cheng, Jun-Yao Huang, Ping-Kun Wang
  • Patent number: 10006823
    Abstract: The distance between microscale electrodes can be determined from microdischarge current and/or capacitance distribution among a plurality of electrodes. A microdischarge-based pressure sensor includes a reference pair of electrodes on a body of the sensor and a sensing pair of electrodes. One of the electrodes of the sensing pair is on a diaphragm of the sensor so that the distance between the sensing pair of electrodes changes with diaphragm movement, while the distance between the reference pair does not. Plasma and current distribution within a microdischarge chamber of the sensor is sensitive to very small diaphragm deflections. Pressure sensors can be fabricated smaller than ever before, with useful signals from 50 micron diaphragms spaced only 3 microns from the sensor body. The microdischarge-based sensor is capable of operating in harsh environments and can be fabricated along-side similarly configured capacitive sensors.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: June 26, 2018
    Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Yogesh Gianchandani, Christine Eun, Xin Luo, Mark Kushner, Zhongmin Xiong, Jun-Chieh Wang
  • Publication number: 20160138991
    Abstract: The distance between microscale electrodes can be determined from microdischarge current and/or capacitance distribution among a plurality of electrodes. A microdischarge-based pressure sensor includes a reference pair of electrodes on a body of the sensor and a sensing pair of electrodes. One of the electrodes of the sensing pair is on a diaphragm of the sensor so that the distance between the sensing pair of electrodes changes with diaphragm movement, while the distance between the reference pair does not. Plasma and current distribution within a microdischarge chamber of the sensor is sensitive to very small diaphragm deflections. Pressure sensors can be fabricated smaller than ever before, with useful signals from 50 micron diaphragms spaced only 3 microns from the sensor body. The microdischarge-based sensor is capable of operating in harsh environments and can be fabricated along-side similarly configured capacitive sensors.
    Type: Application
    Filed: June 20, 2014
    Publication date: May 19, 2016
    Inventors: Yogesh GIANCHANDANI, Christine EUN, Xin LUO, Mark KUSHNER, Zhongmin XIONG, Jun-Chieh WANG