Abstract: The present invention relates to a high linear enhancement-mode heterostructure field-effect transistor. More, the present invention uses an InGaAs channel structure with a linear change, and integrates an adjusting effect of working region corresponding to the threshold voltage of the element. It not only directly provides a complementary structure for the conventional depletion-mode element to select, but also increases the range of the gate voltage swing. More, some important characteristics, such as current driving capacity, transconductance gain, linear amplification, and high speed operation can be largely improved. More particularly, E-mode working element has a low static power. Further, the present invention also has a high stop frequency characteristic of the high speed element from the composite semiconductor, and it can be applied to the microwave push-pull amplification circuit.