Abstract: A flash light emitting diode (LED) package includes a circuit board, a flash LED device disposed on an upper surface of the circuit board n, first and third optical sensors arranged to be adjacent to a first side of the flash LED device on the upper surface of the circuit board and configured to detect light of a first wavelength and light of a second wavelength, respectively, second and fourth optical sensors arranged to be adjacent to a second side of the flash LED device on the upper surface of the circuit board and configured to detect light of the first wavelength and light of the second wavelength, respectively, and an integrated circuit (IC) chip disposed to face a third side between the first and second sides of the flash LED device on the upper surface of the circuit board.

Abstract: A flash light emitting diode (LED) package includes a circuit board, a flash LED device disposed on an upper surface of the circuit board n, first and third optical sensors arranged to be adjacent to a first side of the flash LED device on the upper surface of the circuit board and configured to detect light of a first wavelength and light of a second wavelength, respectively, second and fourth optical sensors arranged to be adjacent to a second side of the flash LED device on the upper surface of the circuit board and configured to detect light of the first wavelength and light of the second wavelength, respectively, and an integrated circuit (IC) chip disposed to face a third side between the first and second sides of the flash LED device on the upper surface of the circuit board.

Abstract: Provided is a light source module including a package body having a groove portion, a semiconductor light emitting diode (LED) chip provided on a bottom surface of the groove portion, the semiconductor LED chip being configured to emit light based on a first driving voltage applied thereto, a variable light transmission unit provided on the groove portion and having light transmissivity varying based on a second driving voltage applied thereto, a first electrode side surface and a second electrode side surface provided on side surfaces of the groove portion and connecting the bottom surface of the groove portion to the variable light transmission unit, and a processor configured to control application of the first driving voltage to the semiconductor LED chip and the second driving voltage to the variable light transmission unit.

Abstract: Provided is a light source module including a package body having a groove portion, a semiconductor light emitting diode (LED) chip provided on a bottom surface of the groove portion, the semiconductor LED chip being configured to emit light based on a first driving voltage applied thereto, a variable light transmission unit provided on the groove portion and having light transmissivity varying based on a second driving voltage applied thereto, a first electrode side surface and a second electrode side surface provided on side surfaces of the groove portion and connecting the bottom surface of the groove portion to the variable light transmission unit, and a processor configured to control application of the first driving voltage to the semiconductor LED chip and the second driving voltage to the variable light transmission unit.

Abstract: A data processing system includes a memory system configured to transfer to, or receive from, a host, a piece of data in an in-band communication way. The memory system is configured to transfer a packet to the host in an out-of-band communication way. The packet includes a first type item, including a parameter regarding an idle status, a data input/output processing status and a status showing a sequential or random write operation in the memory system, and a second type item including a variable corresponding to the parameter.

Abstract: A light source module includes a light source, a light guide plate on the light source and including at least one recess portion in an upper surface thereof, and a filter sheet on an upper surface of the light guide plate and having a pattern. The pattern may be configured to partially reflect and partially transmit light emitted from the light source through the light guide plate.

Abstract: A light source module includes a light source, a light guide plate on the light source and including at least one recess portion in an upper surface thereof, and a filter sheet on an upper surface of the light guide plate and having a pattern. The pattern may be configured to partially reflect and partially transmit light emitted from the light source through the light guide plate.

Abstract: An exemplary embodiment discloses a lighting apparatus including: a base; a first light emitting device (LED) array disposed on the base; a second LED array disposed on the base; and an optical device disposed on the base, the optical device including: a first lens covering the first LED array; and a second lens covering the second LED array, wherein a first beam angle of the first lens is different from a second beam angle of the second lens.

Abstract: Provided is a garnet-based phosphor doped with thorium and a light emitting device using the same. In particular, a garnet-based phosphor having superior light characteristics and heat stability by using thorium as an activator, when compared to a conventional garnet phosphor using cerium as an activator, and a light emitting device using the same as a light source are provided.

Abstract: There is provided a light source module including a light emitting device, and an optical device including a first surface disposed above the light emitting device and having a hollow recessed in a light emitting direction in a central portion through which an optical axis passes, and a second surface disposed to be opposite to the first surface and configured to refract light incident through the hollow to be emitted to the outside. The optical device includes a plurality of ridges disposed on the second surface and periodically arranged in a direction from the optical axis to an edge connected to the first surface.

Abstract: Provided is a garnet-based phosphor doped with thorium and a light emitting device using the same. In particular, a garnet-based phosphor having superior light characteristics and heat stability by using thorium as an activator, when compared to a conventional garnet phosphor using cerium as an activator, and a light emitting device using the same as a light source are provided.

Abstract: A semiconductor device has a silicon substrate, in which an active region is formed between two device isolation films and a gate is formed on the surface of the active region. The silicon substrate has a laterally etched portion in the active region below the surface of the active region on the side near the device isolation film. An insulating film is formed on the laterally etched portion of the silicon substrate. A conductive electrode is formed on the insulating film, through which an external voltage is applied to adjust a threshold voltage. The device isolation film is formed on the conductive electrode. None or some pockets of vacant cavity is present between the device isolation film and the conductive electrode.

Abstract: The present invention relates to a plastic chip for PCR, having polymer valves, and more particularly to a plastic chip for PCR, having polymer valves, which can perform the temperature cycling of a small amount (nanoliter) of a sample in a microchamber at a constant temperature sensitively to temperature gradient. The inventive plastic PCR chip can perform a PCR even with a small amount of a sample through a reduction in the size of a PCR chamber included in the chip, compared to the prior PCR chip. Also, as the surface area of the PCR chamber is increased, the time taken for heating and cooling can be decreased, thus reducing reaction time. In addition, the inventive plastic PCR chip is mounted with one or more PCR chambers, so that it can amplify various genes at the same time.

Abstract: A stack type reactor that can adjust a length of channel (reaction time) to react raw substances with each other for a sufficient time and mix completely raw substances to maximize the reaction efficiency. The stack type reactor comprises an upper block with at least two inlets that introduce different kinds of raw substances and a lower channel fluidly connected to the inlets and formed at a lower surface thereof; a unit block including an upper channel corresponding to the lower channel of the upper block and formed on an upper surface thereof, the unit block including a lower channel formed at a lower surface thereof and fluidly connected with the upper channel via a connecting flow passage. The upper block and unit block form a flow path for the raw substances by connecting to the lower channel of the upper block to the upper channel of the unit block.

Abstract: An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal, the method comprising preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet.

Abstract: In a method for forming a contact plug of a semiconductor device, epitaxial silicon is formed as contact material using a solid-phase epitaxy method. The method can obtain reduced contact resistance and improved refresh characteristics, compared with prior arts using polysilicon as contact material. Also, the method uses an SPE method, not a conventional SEG method, to form epitaxial silicon so that it can substantially reduce thermal budget through low-temperature processes. The method can also use conventional polysilicon deposition process without modification to form epitaxial silicon with ease and productivity.

Abstract: Output buffer slew rate variation over variations in load capacitance is minimized by dividing output voltage transitions into distinct time and output current segments. During the first time segment, the first drive stage with the smallest current is employed. After subsequent delays, additional drive stages are employed and the load current is sequentially increased. Each drive stage employs a specifically sized feedback device which, depending upon its dimensions will provide either parasitic capacitance to slow transitions or positive feedback to speed up transitions. The first stages are sized to incorporate parasitic capacitance, resulting in little change in the settling time of small capacitance loads over prior art output buffers. Latter stages use positive feedback to quicken the transition time which dramatically improves the settling time for larger load capacitances over prior art output buffers.

Abstract: Disclosed is a method of manufacturing a semiconductor device. The method comprises the steps of: preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area; forming an interlayer dielectric film on the top side of the substrate; forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film; forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; removing the photosensitive film pattern; performing a dry cleaning on the exposed bonding area of the substrate so that CF based polymer formed in the etching step is removed; and performing a nitrogen-hydrogen plasma processing on the surface of the exposed bonding area of the substrate so that oxygen polymer and remaining CF-based polymer are removed. Therefore, since hydrogen plasma processing is performed after contact etching, ohmic contact characteristics can be secured.