Patents by Inventor Jun Chun Park
Jun Chun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105695Abstract: A display device includes: a pixel circuit layer including a plurality of transistors; first partition wall and a second partition wall on the pixel circuit layer, each of the first and second partition walls having a shape protruding in a thickness direction; a first electrode and a second electrode on the same layer and respectively on the first partition wall and the second partition wall; a light emitting element between the first electrode and the second electrode; and a semiconductor pattern directly on the first electrode.Type: ApplicationFiled: December 1, 2023Publication date: March 28, 2024Inventors: Tae Gyun KIM, Jun Hong PARK, Jun CHUN, Eui Suk JUNG, Hyun Young JUNG
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Publication number: 20230052879Abstract: The present disclosure relates to a semiconductor light emitting device comprising: a growth substrate; a first semiconductor layer; a first light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a second light emitting part, including an active layer which is provided on the first semiconductor layer and generates ultraviolet light, and a second semiconductor layer; a connecting part which is provided on the first semiconductor layer and connects the first light emitting part and the second light emitting part; an insulating layer that covers the first semiconductor layer, the first light emitting part, the second light emitting part and the connecting part; a first pad electrode which is formed on the insulating layer; and a second pad electrode which is formed on the insulating layer.Type: ApplicationFiled: March 26, 2021Publication date: February 16, 2023Inventors: Sung Gi LEE, Soo Kun JEON, Jun Chun PARK, Sung Gyu LEE
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Patent number: 11309457Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.Type: GrantFiled: January 5, 2017Date of Patent: April 19, 2022Assignee: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Geun Mo Jin, Jun Chun Park, Yeon Ho Jeong, Il Gyun Choi
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Publication number: 20200287088Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.Type: ApplicationFiled: January 5, 2017Publication date: September 10, 2020Applicants: SEMICON LIGHT CO., LTD., SEMICON LIGHT CO., LTD.Inventors: Soo Kun JEON, Geun Mo JIN, Jun Chun PARK, Yeon Ho JEONG, Il Gyun CHOI
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Patent number: 10158047Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to one of the plurality of semiconductor layers.Type: GrantFiled: April 4, 2016Date of Patent: December 18, 2018Assignee: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Jun Chun Park, Il Gyun Choi, Sung Gi Lee, Dae Soo Soul, Tea Jin Kim, Yeon Ho Jeong, Geun Mo Jin, Sung Chan Lee
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Patent number: 10032960Abstract: Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.Type: GrantFiled: June 3, 2015Date of Patent: July 24, 2018Assignee: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Tae Hyun Kim, Tea Jin Kim, Jun Chun Park, Byeong Seob Kim, Jong Won Kim, Ki Man Park
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Publication number: 20180076362Abstract: Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to the plurality of semiconductor layers.Type: ApplicationFiled: April 4, 2016Publication date: March 15, 2018Inventors: Soo Kun JEON, Jun Chun PARK, Il Gyun CHOI, Sung Gi LEE, Dae Soo SOUL, Tea Jin KIM, Yeon Ho JEONG, Geun Mo JIN, Sung Chan LEE
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Publication number: 20170125641Abstract: Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.Type: ApplicationFiled: June 3, 2015Publication date: May 4, 2017Inventors: Soo Kun JEON, Tae Hyun KIM, Tea Jin KIM, Jun Chun PARK, Byeong Seob KIM, Jong Won KIM, Ki Man PARK
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Patent number: 8431939Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.Type: GrantFiled: August 11, 2010Date of Patent: April 30, 2013Assignee: Semicon Light Co., Ltd.Inventors: Soo Kun Jeon, Eun Hyun Park, Jong Won Kim, Jun Chun Park
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Patent number: 8373174Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.Type: GrantFiled: March 29, 2010Date of Patent: February 12, 2013Assignee: Semicon Light Co., LTDInventors: Soo Kun Jeon, Eun Hyun Park, Jun Chun Park
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Publication number: 20120193674Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.Type: ApplicationFiled: August 11, 2010Publication date: August 2, 2012Applicant: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Eun Hyun Park, Jong Won Kim, Jun Chun Park
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Publication number: 20110073870Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.Type: ApplicationFiled: March 29, 2010Publication date: March 31, 2011Applicant: SEMICON LIGHT CO., LTDInventors: Soo Kun JEON, Eun Hyun PARK, Jun Chun PARK