Abstract: A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.

Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

Abstract: A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.

Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.

Abstract: A coplanar waveguide structure includes a dielectric layer disposed over at least a portion of a substrate and a planar transmission line disposed within the dielectric layer. In some instances, the planar transmission line can include a conductive signal line and one or more ground lines. In other instances, the planar transmission line may include a conductive stacked signal line and one or more stacked ground lines.

Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.

Abstract: A coplanar waveguide structure includes a dielectric layer disposed over at least a portion of a substrate and a planar transmission line disposed within the dielectric layer. In some instances, the planar transmission line can include a conductive signal line and one or more ground lines. In other instances, the planar transmission line may include a conductive stacked signal line and one or more stacked ground lines.

Abstract: A resonator device includes a substrate with a first number of fins extending over the substrate. The fins extend along the substrate in a first direction. A second number of conductive fingers are provided over the fins, which extend in a second direction perpendicular to the first direction. The first number is less than or equal to the second number. The conductive fingers are configured to receive an input signal such that the conductive fingers resonate at an output frequency. The conductive fingers define a finger pitch therebetween, and the output frequency is based on the finger pitch.

Abstract: A coplanar waveguide structure includes a dielectric layer disposed over at least a portion of a substrate and a planar transmission line disposed within the dielectric layer. In some instances, the planar transmission line can include a conductive signal line and one or more ground lines. In other instances, the planar transmission line may include a conductive stacked signal line and one or more stacked ground lines.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a transistor, at least one isolation and at least one non-doped region. The substrate includes a lower portion. The transistor is disposed on the lower portion. The at least one isolation is adjacent to the transistor, and disposed on the lower portion. The at least one non-doped region is disposed between and adjacent to the isolation and the lower portion.

Abstract: A semiconductor device includes a substrate, a first metal-oxide-semiconductor device and a at least one first resistor. The substrate includes a non-doped region. The first metal-oxide-semiconductor device extends into the substrate. The first metal-oxide-semiconductor device is adjacent to the non-doped region. The at least one first resistor is disposed right above the non-doped region and arranged in a first row aligned with the first metal-oxide-semiconductor device in a first direction.

Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, first and second wells of a first conductivity type, a third well of a second conductivity type, different from the first conductivity type, a first doped region of the first conductivity type in the second well, a metal-oxide-semiconductor device, and a feature. The metal-oxide-semiconductor device is at least partially disposed within the substrate and includes a gate structure disposed above the first well. The gate structure, the first doped region, or the combination thereof is configured to be floated. The feature is disposed adjacent to the metal-oxide-semiconductor device. The feature extends into the substrate with a first depth and a portion of the metal-oxide-semiconductor device extends into the substrate with a second depth smaller than the first depth.

Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.

Abstract: A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.

Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.

Abstract: A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.

Abstract: Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.