Patents by Inventor Jun-Eun LEE

Jun-Eun LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TiN ETCHANT COMPOSITION AND METHOD OF FORMING SEMICONDUCTOR DEVICE
    Publication number: 20240336839
    Abstract: A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.
    Type: Application
    Filed: November 14, 2023
    Publication date: October 10, 2024
    Applicants: Samsung Electronics Co,. Ltd., OCI Company Ltd.
    Inventors: GAYOUNG SONG, JUNG-MIN OH, TAE SOO KWON, JUN-EUN LEE, SANG WON BAE, Minjae SUNG, YOUN SUG YOO, WOOK CHANG
  • Etching solution for silicon substrate and method for manufacturing semiconductor device using the same
    Patent number: 11104848
    Abstract: Disclosed is an etching solution for a silicon substrate. More specifically, an etching solution for a silicon substrate is disclosed in which a concentration of a silane compound (silicon) in the etching solution for the silicon substrate is adjusted to improve an etching selectivity of a silicon nitride film relative to a silicon oxide film during etching of the nitride film.
    Type: Grant
    Filed: January 22, 2020
    Date of Patent: August 31, 2021
    Assignee: OCI COMPANY LTD.
    Inventors: Ho-Seong Yoo, Myung-Hyun Kim, Jun-Eun Lee, Pyong-Hwa Jang
  • ETCHING SOLUTION FOR SILICON SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20200239771
    Abstract: Disclosed is an etching solution for a silicon substrate. More specifically, an etching solution for a silicon substrate is disclosed in which a concentration of a silane compound (silicon) in the etching solution for the silicon substrate is adjusted to improve an etching selectivity of a silicon nitride film relative to a silicon oxide film during etching of the nitride film.
    Type: Application
    Filed: January 22, 2020
    Publication date: July 30, 2020
    Inventors: Ho-Seong YOO, Myung-Hyun KIM, Jun-Eun LEE, Pyong-Hwa JANG
  • NEGATIVE ELECTRODE FOR SECONDARY BATTERY AND MANUFACTURING METHOD OF THE SAME
    Publication number: 20170040602
    Abstract: The present invention relates to a negative electrode for a secondary battery and a method for manufacturing the negative electrode, and more particularly, to a negative electrode for a secondary battery which exhibits excellent charge/discharge characteristics and lifespan characteristics by including a carbon-silicon composite and graphite at a predetermined particle size ratio.
    Type: Application
    Filed: August 5, 2016
    Publication date: February 9, 2017
    Inventors: Jeong-Hyun HA, Yo-Seop KIM, Eun-Hye JEONG, Jun-Eun LEE