Abstract: The present disclosure relates to a composite reverse osmosis membrane and a preparation method therefor. The preparation method of the present disclosure can realize the preparation of a composite reverse osmosis membrane having a high flux, a high desalinization rate, a high deboration rate and high contamination resistance in a simple operation and high reaction efficiency manner.

Abstract: A conductive hot melt adhesive having near-infrared light welding characteristics includes gallium indium liquid metal, lipoic acid and a polyvalent crosslinking agent. The preparation method includes: mixing gallium indium liquid metal, lipoic acid and polyvalent crosslinking agent, placing in an agate mortar and grinding to obtain a precursor powder; heating the precursor powder to obtain the conductive hot melt adhesive having near-infrared light welding characteristics. The present disclosure discloses that the prepared conductive adhesive hot melt adhesive has good electrical conductivity and can achieve effective bonding to a variety of solid bases through near-infrared light irradiation.

Abstract: The present disclosure provides a method for detecting a folding angle of a foldable screen, a touch chip, a touch panel, and an electronic device, thereby effectively detecting a folding angle of a foldable screen of the electronic device. The method includes: acquiring detection data of a particular detection channel in a touch panel, where the touch panel includes a bending region extending along a first direction and a non-bending region distributed on both sides of the bending region along a second direction, the second direction is perpendicular to the first direction, and the particular detection channel is a first detection channel that is closest to the bending region or is located within the bending region among a plurality of first detection channels parallel to the first direction; and determining the folding angle of the foldable screen according to the detection data of the particular detection channel.

Abstract: Provided is a method for electrochemical preparation of polythioctic acid (PTA) and a derivative thereof. The method includes: mixing a thioctic acid (TA) monomer, a supporting electrolyte, and a polar solvent to obtain a mixed liquor; and subjecting the mixed liquor to electrochemical polymerization to obtain the PTA and/or the derivative thereof on a surface of an anode, wherein the TA monomer comprises one or more selected from the group consisting of TA and a TA derivative, and the TA derivative has a structure shown in formula I, wherein R is a derived group.

Abstract: Gas detection devices comprise a dehydration unit a concentration unit, and a temperature control unit for controlling a temperature. The gas detection device includes a sampling mode in which sample gas flows into and out of the dehydration unit through a first port and a second port, respectively, wherein the volatile organic compounds in the sample gas are concentrated in the concentration unit. The temperature control unit may be configured such that the temperature of the sample gas after flowing out from the dehydration unit and before flowing into the concentration unit is not greater than a first preset temperature. Generation of condensed substances in the sample gas can be effectively avoided in a simple manner after the sample gas flows into the concentration unit, thereby further preventing ice blockage. Methods for detecting volatile organic compounds in a sample gas are also disclosed.

Abstract: The present disclosure belongs to the technical field of porous membrane material preparation, and specifically relates to a reverse osmosis composite membrane with an ultrathin desalting layer and a preparation method thereof; the intermediate layer is introduced after modifying the polysulfone base membrane, the modified polysulfone base membrane support layer may strengthen the bonding to the desalting layer through a covalent bond, and the thickness of the desalting layer is reduced to be ?10 nm, so that the desalination rate of the membrane is not greatly affected while increasing the membrane flux. Compared with the membrane having a conventional thickness of the desalting layer, the water flux of the reverse osmosis composite membrane with an ultrathin desalting layer may be increased by about 0.5 times, while the desalination rate has a small change.

Abstract: Examples disclosed herein relate to a Multiple-Input Multiple-Output (MIMO) radar for virtual beam steering. The MIMO radar has a plurality of transmit antennas and a receive antenna array having a plurality of radiating elements. The MIMO radar also includes a digital signal processor (DSP) configured to synthesize a virtual receive array having N×M receive subarrays from the plurality of transmit antennas and the receive antenna array, where N is the number of transmit antennas and M is the number of receiving elements. Other examples disclosed herein relate to a method of virtual beam steering.

Abstract: The present invention provides a method for selecting a response, an earphone base, a method of selecting a wireless earphone, a device and a medium. The method for selecting a response includes sending communication data to a user terminal, the communication data comprises a wireless earphone communication data and/or an earphone base communication data; detecting whether a selection command for the wireless earphone sent from the user terminal is received; and controlling the earphone base corresponding to the selection command to execute a predetermined response action. By adopting the present invention, the earphone base establishes a connection with the user terminal through its own communication function or a connected wireless earphone. The communication data of the earphone base and the wireless earphone are sent to the user terminal for the user to view. The earphone base is capable of responding when receiving the selection command.

Abstract: A method includes: sending, by one or more computers, in response to the number of data providers for federated learning being greater than a first threshold, a data field required for the federated learning to a coordinator, the coordinator comprising a computer; receiving, by one or more computers, from the coordinator, information about one or more data providers comprising the required data field, for determining the data providers comprising the required data field as the remaining data providers, wherein the coordinator stores a data field of each data provider; and performing, by one or more computers, federated learning-based modeling with each of the remaining data providers.

Abstract: Some embodiments include an integrated assembly having a source structure, and having a stack of alternating conductive levels and insulative levels over the source structure. Cell-material-pillars pass through the stack. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. The cell-material-pillars include channel material which is electrically coupled with the source structure. Memory cells are along the conductive levels and include regions of the cell-material-pillars. A panel is between the first and second memory-block-regions. The panel has a first material configured as a container shape. The container shape defines opposing sides and a bottom of a cavity. The panel has a second material within the cavity. The second material is compositionally different from the first material. Some embodiments include methods of forming integrated assemblies.

Abstract: Provided is a method for electrochemical preparation of polythioctic acid (PTA) and a derivative thereof. The method includes: mixing a thioctic acid (TA) monomer, a supporting electrolyte, and a polar solvent to obtain a mixed liquor; and subjecting the mixed liquor to electrochemical polymerization to obtain the PTA and/or the derivative thereof on a surface of an anode, wherein the TA monomer comprises one or more selected from the group consisting of TA and a TA derivative, and the TA derivative has a structure shown in formula I, wherein R is a derived group.

Abstract: A semiconductor device structure that comprises tiers of alternating dielectric levels and conductive levels and a carbon-doped silicon nitride over the tiers of the staircase structure. The carbon-doped silicon nitride excludes silicon carbon nitride. A method of forming the semiconductor device structure comprises forming stairs in a staircase structure comprising alternating dielectric levels and conductive levels. A carbon-doped silicon nitride is formed over the stairs, an oxide material is formed over the carbon-doped silicon nitride, and openings are formed in the oxide material. The openings extend to the carbon-doped silicon nitride. The carbon-doped silicon nitride is removed to extend the openings into the conductive levels of the staircase structure. Additional methods are disclosed.

Abstract: A semiconductor device structure that comprises tiers of alternating dielectric levels and conductive levels and a carbon-doped silicon nitride over the tiers of the staircase structure. The carbon-doped silicon nitride excludes silicon carbon nitride. A method of forming the semiconductor device structure comprises forming stairs in a staircase structure comprising alternating dielectric levels and conductive levels. A carbon-doped silicon nitride is formed over the stairs, an oxide material is formed over the carbon-doped silicon nitride, and openings are formed in the oxide material. The openings extend to the carbon-doped silicon nitride. The carbon-doped silicon nitride is removed to extend the openings into the conductive levels of the staircase structure. Additional methods are disclosed.

Abstract: Examples disclosed herein relate to a meta-structure based reflectarray for beamforming wireless applications and a method of operation of passive reflectarrays in an indoor environment. The method includes receiving, by a plurality of passive reflectarrays, a Radio Frequency (RF) signal from a source. The method also includes reflecting, by the plurality of passive reflectarrays, the RF signal to generate a plurality of RF beams to a respective target coverage area, in which each of the plurality of RF beams increases a multipath gain along a signal path between a corresponding passive reflectarray to the respective target coverage area.

Abstract: A semiconductor device structure that comprises tiers of alternating dielectric levels and conductive levels and a carbon-doped silicon nitride over the tiers of the staircase structure. The carbon-doped silicon nitride excludes silicon carbon nitride. A method of forming the semiconductor device structure comprises forming stairs in a staircase structure comprising alternating dielectric levels and conductive levels. A carbon-doped silicon nitride is formed over the stairs, an oxide material is formed over the carbon-doped silicon nitride, and openings are formed in the oxide material. The openings extend to the carbon-doped silicon nitride. The carbon-doped silicon nitride is removed to extend the openings into the conductive levels of the staircase structure. Additional methods are disclosed.

Abstract: The present disclosure provides a two-stroke pumping method and oil production device, and relates to the technical field of oil production. The oil production device comprises a pump body, wherein the oil production device further comprises a central tube of a hollow structure, and the central tube is partially located in the pump body and coaxially arranged with the pump body; a traveling valve and a standing valve are arranged on the left side and the right side of the outer wall of the central tube respectively, and the traveling valve is arranged between the pump body and the central tube; the standing valve is located outside the pump body; the traveling valve and the standing valve are matched with the pump body and the central tube to form an oil pumping space; and an oil pumping assembly is further arranged in the oil pumping space.

Abstract: Some embodiments include an integrated assembly having a source structure, and having a stack of alternating conductive levels and insulative levels over the source structure. Cell-material-pillars pass through the stack. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. The cell-material-pillars include channel material which is electrically coupled with the source structure. Memory cells are along the conductive levels and include regions of the cell-material-pillars. A panel is between the first and second memory-block-regions. The panel has a first material configured as a container shape. The container shape defines opposing sides and a bottom of a cavity. The panel has a second material within the cavity. The second material is compositionally different from the first material. Some embodiments include methods of forming integrated assemblies.

Abstract: A method, an apparatus, a device and a storage medium for embedding user app interest are provided. The method includes: acquiring a user existing app installation list and a user app installation list within a predetermined time window, where the app includes app ID information and app category information; inputting the existing app installation list and the app installation list within the predetermined time window into a pre-trained user app interest embedding model to obtain a user app interest embedding vector. By combining the user existing app installation list information and the user recent app installation list information, the user app interest embedding vector may simultaneously reflect the user long-term interest and the user short-term interest.

Abstract: A method for forming an implant hard mask on a substrate provides a multi-layer hardmask resistant to high processing temperatures and ion energies. In some embodiments, the method may comprise depositing a screen layer of oxide material with a thickness of approximately 20 nm to approximately 100 nm, depositing a first layer of the implant hard mask of amorphous carbon with a second thickness of approximately 100 nm to approximately 3000 nm; depositing a second layer of the implant hard mask of oxide with a third thickness of approximately 100 nm to approximately 3000 nm; depositing a photoresist layer on the second layer of the implant hard mask, and patterning the photoresist layer to expose portions of the second layer of the implant hard mask, etching the second layer of the implant hard mask and then the first layer of the implant hard mask using a hard mask etch process to expose portions of the screen layer.

Abstract: A method of forming a capping layer on a substrate for annealing processes incorporates an interfacial layer of a material that is at least one element of a chemical compound used in the substrate. In some embodiments, the method may comprise depositing an interfacial layer on the substrate where the interfacial layer is amorphous silicon (a-Si), amorphous SiCx, or amorphous SiCxN (where X is greater than zero to approximately 2), depositing an amorphous carbon (a-C) capping layer on the substrate, and annealing the substrate at a temperature of approximately 1500 degrees Celsius or higher. The interfacial layer may have a thickness of approximately 5 nanometers to approximately 100 nanometers and may be formed on planar structures or on three-dimensional structures.