Abstract: A semiconductor device and a method for manufacturing the same. The method comprises: providing a substrate; forming a fin, a dummy gate, a first spacer, and a hard mask on a surface of the substrate; etching the substrate to form a groove located directly beneath the fin and running through a second spacer; forming, in the groove, a filling layer made of an insulating dielectric material, and thermal conductivity of the insulating dielectric material is higher than that of the substrate; removing the second spacer through etching; removing two opposite ends of each sacrificial layer to form cavities; filling the cavities to form inner spacers; forming a source and a drain on the substrate; forming a first dielectric layer; planarizing the first dielectric layer to expose the dummy gate; removing the dummy gate to release a channel comprising conductive nanosheets; forming a surrounding gate surrounding the conductive nanosheets.

Abstract: The present disclosure provides a memory with a three-dimensional vertical structure and a manufacturing method. The memory includes: a semiconductor substrate, a first isolation layer, a first transistor and a second transistor. The first transistor includes a first source layer, a second isolation layer, a first drain layer, a third isolation layer, and a first through hole penetrating to the first source layer. A first active layer, a first gate dielectric layer and a first gate layer are on an inner sidewall of the first through hole. The second transistor includes a fourth isolation layer, a second source layer, a fifth isolation layer, and a second through hole penetrating to the first gate layer. A second active layer, a second gate dielectric layer and a second gate layer are on an inner sidewall of the second through hole. The second through hole is surrounded by the first through hole.

Abstract: The present disclosure provides a display substrate, a manufacturing method of the display substrate and a display apparatus. The display substrate includes a base substrate; an alignment layer, on the base substrate; a first electrode, located between the base substrate and the alignment layer and being in contact with the alignment layer; and a pattern layer, located between the base substrate and the alignment layer and being in contact with the alignment layer. An orthographic projection of the pattern layer on the base substrate does not overlap an orthographic projection of the first electrode on the base substrate, and a ratio of a contact angle of the pattern layer to a contact angle of the first electrode is greater than or equal to 7/12 and less than 3/2.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device includes: a substrate; an insulating layer provided with a plurality of trenches extending in a first direction; a first electrode layer and a second electrode layer, where a spacing region is provided between the first electrode layer and the second electrode layer; a semiconductor layer covering bottom portions and sidewalls of all channel trenches, where the channel trenches are at least a part of trench bodies of the trenches located in the spacing region; a gate dielectric layer covering a surface of the semiconductor layer in the channel trenches on a side away from the bottom portions and the sidewalls of the channel trenches; a gate layer, where at least a part of the channel trenches are fully filled with the gate layer.

Abstract: The present application relates to a method for prepare a Cangrelor tetrasodium salt, comprising: using N-[2-(methylthio)ethyl]-2-[(3,3,3-trifluoropropyl)sulfonyl]adenosine as a raw material to undergo two steps of reaction to obtain a reaction solution containing the Cangrelor tetrasodium salt; separating and purifying once by C18 silica gel column chromatography so as to obtain a Cangrelor tetrasodium salt pure product. The present application has the advantages of short synthesis route, mild reaction conditions, sufficient reaction, simple operation, high product yield, high purity, and environmental friendliness, and is suitable for large-scale preparation.

Abstract: This application discloses example radio frequency identification systems and example methods for constructing a relay network, a reader, and a repeater. One example radio frequency identification system includes a reader, a repeater, and a target tag. The reader can be configured to send a first signal to the repeater. The repeater can be configured to send an excitation signal to the target tag based on the first signal. The target tag can be configured to send a target backscatter signal based on excitation of the excitation signal, where the target backscatter signal carries electronic product code information. The reader can be further configured to receive the target backscatter signal and obtain the electronic product code information in the target backscatter signal.

Abstract: The present application relates to a method for prepare a Cangrelor tetrasodium salt, comprising: using N-[2-(methylthio)ethyl]-2-[(3,3,3-trifluoropropyl)sulfonyl]adenosine as a raw material to undergo two steps of reaction to obtain a reaction solution containing the Cangrelor tetrasodium salt; separating and purifying once by C18 silica gel column chromatography so as to obtain a Cangrelor tetrasodium salt pure product. The present application has the advantages of short synthesis route, mild reaction conditions, sufficient reaction, simple operation, high product yield, high purity, and environmental friendliness, and is suitable for large-scale preparation.

Abstract: This application discloses example radio frequency identification systems and example methods for constructing a relay network, a reader, and a repeater. One example radio frequency identification system includes a reader, a repeater, and a target tag. The reader can be configured to send a first signal to the repeater. The repeater can be configured to send an excitation signal to the target tag based on the first signal. The target tag can be configured to send a target backscatter signal based on excitation of the excitation signal, where the target backscatter signal carries electronic product code information. The reader can be further configured to receive the target backscatter signal and obtain the electronic product code information in the target backscatter signal.