Abstract: A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.

Abstract: After determining the precipitated oxygen concentration and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress ?cri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained precipitated oxygen concentration and residual oxygen concentration; and the obtained critical shear stress ?cri and the thermal stress ? applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress ? is equal to or more than the critical shear stress ?cri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress ? is less than the critical shear stress ?cri.

Abstract: After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress ?cri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained size of the oxygen precipitates and residual oxygen concentration; and the obtained critical shear stress ?cri and the thermal stress ? applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress ? is equal to or more than the critical shear stress ?cri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress ? is less than the critical shear stress ?cri.

Abstract: A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.

Abstract: After determining the precipitated oxygen concentration and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress ?cri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained precipitated oxygen concentration and residual oxygen concentration; and the obtained critical shear stress and the thermal stress ? applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress ? is equal to or more than the critical shear stress ?cri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress ? is less than the critical shear stress ?cri.

Abstract: An object of the present invention is to provide an epitaxial wafer on which dislocation is preventable even when a LSA treatment is performed in device processes. An epitaxial wafer according to the present invention includes a wafer 11 whose nitrogen concentration is 1×1012 atoms/cm3 or more or whose specific resistance is 20 m?·cm or less by boron doping, and an epitaxial layer 12 provided on the wafer 11. On the wafer 11, if a thermal treatment is performed at 750° C. for 4 hours and then at 1,000° C. for 4 hours, polyhedron oxygen precipitates grow predominantly over plate-like oxygen precipitates. Therefore, in the device processes, plate-like oxygen precipitates cannot be easily formed. As a result, even when the LSA treatment is performed after various thermal histories in the device processes, it is possible to prevent the dislocation, which is triggered by oxygen precipitates, from generating.

Abstract: After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress ?cri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained size of the oxygen precipitates and residual oxygen concentration; and the obtained critical shear stress ?cri and the thermal stress ? applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress ? is equal to or more than the critical shear stress ?cri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress ? is less than the critical shear stress ?cri.

Abstract: A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.

Abstract: A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.

Abstract: A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.

Abstract: An object of the present invention is to provide an epitaxial wafer on which dislocation is preventable even when a LSA treatment is performed in device processes. An epitaxial wafer according to the present invention includes a wafer 11 whose nitrogen concentration is 1×1012 atoms/cm3 or more or whose specific resistance is 20 m?·cm or less by boron doping, and an epitaxial layer 12 provided on the wafer 11. On the wafer 11, if a thermal treatment is performed at 750° C. for 4 hours and then at 1,000° C. for 4 hours, polyhedron oxygen precipitates grow predominantly over plate-like oxygen precipitates. Therefore, in the device processes, plate-like oxygen precipitates cannot be easily formed. As a result, even when the LSA treatment is performed after various thermal histories in the device processes, it is possible to prevent the dislocation, which is triggered by oxygen precipitates, from generating.

Abstract: A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.