Abstract: A seat slide device of the present invention comprises a lower rail (102) and an upper rail (101). The lower rail (102) has a bottom wall (102b) and includes a foreign-object catching member (1). The foreign-object catching member (1) has an elastic body (2). A height of the elastic body (2) with respect to a bottom wall (102b) of the lower rail (102) is set to become higher than a height of a positioning pin (105) as a protruding object provided inside the lower rail (102) to protrude from the bottom wall (102b).

Abstract: A seat lifter smoothly lifts and lowers right and left seat frames relative to respective base members so that a seat can be lifted and lowered smoothly. The seat lifter has first to fourth links (4a to 4d), and a coupling (6) that couples the first link (4a) and the second link (4b), and has a first sun gear (62) and a second sun gear (162). The first link (4a) has a first link body (41) that is coupled interlockably to a first planetary gear group (40) with a plurality of first planetary gears (44), and a planetary-gear operating section (5). The second link (4b) has a second link body (141) that is coupled interlockably to a second planetary gear group (140) with a plurality of second planetary gears (144).

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: A seat slide device of the present invention comprises a lower rail (102) and an upper rail (101). The lower rail (102) has a bottom wall (102b) and includes a foreign-object catching member (1). The foreign-object catching member (1) has an elastic body (2). A height of the elastic body (2) with respect to a bottom wall (102b) of the lower rail (102) is set to become higher than a height of a positioning pin (105) as a protruding object provided inside the lower rail (102) to protrude from the bottom wall (102b).

Abstract: A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Abstract: A seat lifter smoothly lifts and lowers right and left seat frames relative to respective base members so that a seat can be lifted and lowered smoothly. The seat lifter has first to fourth links (4a to 4d), and a coupling (6) that couples the first link (4a) and the second link (4b), and has a first sun gear (62) and a second sun gear (162). The first link (4a) has a first link body (41) that is coupled interlockably to a first planetary gear group (40) with a plurality of first planetary gears (44), and a planetary-gear operating section (5). The second link (4b) has a second link body (141) that is coupled interlockably to a second planetary gear group (140) with a plurality of second planetary gears (144).

Abstract: A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Abstract: Dislocation-free single-crystal silicon is manufactured by the Czochralski method, wherein silicon which does not contain particles with an average particle diameter smaller than 250 ?m, is used as raw material for melting.

Abstract: A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Abstract: A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Abstract: A lithium battery comprises a pouch (4) and a lithium battery module (2) packaged in the pouch (4). The pouch (4) is formed from a battery packaging laminated structure (10). The laminated structure (10) has an outermost layer (11), a barrier layer (12) and an innermost layer (14), or an outermost layer (11), a barrier layer (12), an intermediate layer (13) and an innermost layer (14) superposed in that order. The outermost layer (11) is formed of a formable base material, the barrier layer (12) is formed of a impermeable base material having a barrier property, the intermediate layer (13) is formed of a formable base material and the innermost layer (14) is formed of a heat-adhesive base material.

Abstract: A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Abstract: Disclosed is a photoelectric conversion device in which a plurality of p-type crystal semiconductor particles 4 are joined to one main surface of a conductive substrate 2. A boron concentration in a junction of a lower part of each of the p-type crystal semiconductor particles 4 with the conductive substrate 2 is higher than a boron concentration in a portion, other than the junction, of the p-type crystal semiconductor particle 4. The junction is a p+ layer having a high impurity concentration. The p+ layer allows p-type carriers to be collected, thereby making it possible to improve a BFS effect.

Abstract: A billet produced by continuous casting having little central segregation, in particular a billet of high carbon steel produced by continuous casting, and a manufacturing method therefor are provided. In the continuous casting billet, the size of the dendritic equiaxed crystal in a billet central portion is reduced to be not more than 6 mm. For this purpose, electromagnetic stirring is performed so that the inclining angle of the primary dendrite within 10 mm of a billet surface layer is increased to be not less than 10°. Furthermore, the mechanical soft reduction is performed during continuous casting so that the diameter of the center porosity in the billet central portion is reduced to be not more than 4 mm. Thereby, in particular in the manufacturing of the continuous casting billet having a carbon content of not less than 0.

Abstract: A polymer battery module (2) provided with tabs (4) is put in a package (5) and an open end part of the package (5) is heat-sealed by a heat-sealing machine (10). The heat-sealing machine (10) is provided with a pair of sealing heads (10a, 10b) respectively having sealing surfaces (12). The sealing surfaces (12) of the sealing heads (10a, 10b) are provided with recesses (11) in parts thereof corresponding to the tabs (4) of the polymer battery module (2) contained in the package (5) as located in place between the sealing heads (10a, 10b) for heat-sealing.

Abstract: A battery packet (50) comprises a battery case (51) formed by processing a battery case forming laminated sheet (10), a battery 50a contained in the battery case (51), and tabs (59, 60) extending outside from the battery case (51). The battery case forming laminated sheet (10) is formed by laminating a first base film layer (1a), i.e., an outermost layer, a metal foil layer (2), and a heat-adhesive resin layer (3) in that order. The first base film layer (1a) is a biaxially oriented polyethylene terephthalate resin film or a biaxially oriented nylon resin film. The metal foil layer (2) is an aluminum or copper foil. The heat-adhesive resin layer (3) is formed of a polyolefin resin, more preferably, of an acid-denatured polyolefin resin.

Abstract: A photoelectric conversion device is provided, which comprises: a substrate serving as an electrode; numerous crystalline semiconductor particles containing a first conductivity-type impurity deposited on the substrate to join thereto; an insulator provided among the crystalline semiconductor particles; and a semiconductor layer containing an impurity of the opposite conductivity-type to which another electrode is connected, which semiconductor layer being provided over the crystalline semiconductor particles, wherein the crystalline semiconductor particles comprise silicon, and the insulator comprises a glass material which contains at least 1 wt % and at most 20 wt % tin oxide. By this arrangement, it is possible to form a good insulator capable of filling spaces among the crystalline semiconductor particles and preventing defects such as cracking, bubbling and abnormal deposition from occurring, and consequently to provide a photoelectric conversion device with high reliability at low cost.