Abstract: Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fea—Co100-a)100-b-c-d—Tab—Nbc-Md, wherein 0<a?80, 0?b?10, 0?c?15, 5?b+c?15, 2?d?20, 15?b+c+d?25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ?fB at 300° C. of 0.4% or more.

Abstract: Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fea—Co100-a)100-b-c-d—Tab—Nbc-Md, wherein 0<a?80, 0?b?10, 0?c?15, 5?b+c?15, 2?d?20, 15?b+c+d?25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ?fB at 300° C. of 0.4% or more.

Abstract: The invention provides a target material that represented by the composition formula in atomic percent of (FeX—Co100-X)100-Y-MY (wherein M represents at least one element selected from Ta or Nb, and wherein X and Y respectively satisfy the conditions of 0?X?80 and 10?Y?30), that contains a balance of unavoidable impurities, and that has a flexural strain at break at 300° C. of 0.33% or more.

Abstract: A soft magnetic under layer has a low antiferromagnetic coupling force and a high saturation magnetic flux density. The soft magnetic under layer includes two soft magnetic layers and a spacer layer. The soft magnetic layers are expressed by a composition formula as (Fe100-XCoX)100-Y-MY by atomic ratio, wherein 15?X?30, 10?Y?30, and an element M is at least one element selected from a group of Ta, Ti, Zr, Nb, Cr, and B; are composed of residual incidental impurities; and each have a thickness of 10 to 50 nm. The spacer layer is composed of one element selected from a group of Ru, Cr, Cu, Re, and Rh and has a thickness of 0.10 to 0.50 nm. The soft magnetic layers are antiferromagnetically coupled through the spacer layer inserted therebetween. An antiferromagnetic coupling force between the soft magnetic layers is 100 to 4,000 A/m.

Abstract: Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fea—Co100-a)100-b-c-d—Tab—Nbc-Md, wherein 0<a?80, 0?b?10, 0?c?15, 5?b+c?15, 2?d?20, 15?b+c+d?25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ?fB at 300° C. of 0.4% or more.

Abstract: A soft magnetic under layer has a low antiferromagnetic coupling force and a high saturation magnetic flux density. The soft magnetic under layer includes two soft magnetic layers and a spacer layer. The soft magnetic layers are expressed by a composition formula as (Fe100-XCoX)100-Y-MY by atomic ratio, wherein 15?X?30, 10?Y?30, and an element M is at least one element selected from a group of Ta, Ti, Zr, Nb, Cr, and B; are composed of residual incidental impurities; and each have a thickness of 10 to 50 nm. The spacer layer is composed of one element selected from a group of Ru, Cr, Cu, Re, and Rh and has a thickness of 0.10 to 0.50 nm. The soft magnetic layers are antiferromagnetically coupled through the spacer layer inserted therebetween. An antiferromagnetic coupling force between the soft magnetic layers is 100 to 4,000 A/m.

Abstract: Disclosed is a Co—Fe alloy for soft magnetic films used in perpendicular magnetic recording media, etc., which maintains high soft magnetic properties and has excellent weather resistance. Disclosed is a Co—Fe alloy for soft magnetic films, which is a Co—Fe alloy the composition formula of which is expressed at atomic ratio as ((Co100?X—FeX)100?Y—NiY)100?(a+b+c)-Mla-M2b-Tic, where 5?X?80, 0?Y?25, 2?a?6, 2?b?10, and 0.5?c?10, the remainder of which is composed of unavoidable impurities, and wherein the element M1 in the aforementioned composition formula is one or two or more elements selected from (Zr, Hf, Y), and the element M2 in the aforementioned composition formula is one or two or more elements selected from (Ta, Nb).

Abstract: The present invention relates to a Co—Fe—Zr based alloy target material for forming a soft magnetic film of the Co—Fe—Zr based alloy used in a perpendicular magnetic recording medium, and provides a Co—Fe—Zr based alloy target material having a low magnetic permeability and good sputtering characteristics and a process for producing this target material. A Co—Fe—Zr based alloy sputtering target material represented by the compositional formula based on the atomic ratio: (Cox—Fe100-X)100-(Y+Z)—ZrY-MZ (20?X?70, 2?Y?15 and 2?Z?10) in which the element(s) M is one or more elements selected from the group consisting of Ti, V, Nb, Ta, Cr, Mo, W, Si, Al and Mg, wherein a phase composed of HCP-Co and an alloy phase composed mainly of Fe are finely dispersed in the microstructure of the target material.