Abstract: An embodiment of an LED lamp that generates light of a color temperature that decreases with decreasing power applied to the LED lamp may include at least one lighting arrangement that may include a first LED array of serially connected first LED chips, a second LED array of serially connected second LED chips; a first photoluminescence layer covering the first LED array for generating light of a first color temperature; a second photoluminescence layer covering the second LED array for generating light of a second different color temperature; and a linear resistor serially connected to the first LED array, wherein the first LED array and second LED array are connected in parallel.

Abstract: There is provided a full spectrum white light emitting device comprising: a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths and wherein broadband light generated by the broadband LED flip chip is composed of a combination of the multiple narrowband light emissions, and wherein the at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 n

Abstract: An LED-filament comprising: a partially light transmissive substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material that is in direct contact with and covers all of the plurality of LED chips; and a light scattering layer that is in direct contact with and covers at least the photoluminescence material, wherein the light scattering layer comprises particles of light scattering material, and wherein the photoluminescence material comprises broadband green to red photoluminescence materials and narrowband red photoluminescence material.

Abstract: There is provided a full spectrum white light emitting device comprising: a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths and wherein broadband light generated by the broadband LED flip chip is composed of a combination of the multiple narrowband light emissions, and wherein the at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 n

Abstract: A full spectrum white light emitting device comprising: a broadband solid-state excitation source operable to generate broadband blue excitation light; and at least one photoluminescence material which generates green to red light, wherein the device generates white light whose intensity over the blue to cyan region of the spectrum has a maximum percentage deviation from the intensity of light of a black-body or CIE Standard Illuminant D of less than 50%.

Abstract: An LED-filament includes a partially light-transmissive substrate; blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament may further include a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: A color temperature tunable LED-filament includes an elongated light-transmissive substrate; a first array of LED chips on a front face of the substrate; a second array of LED chips on the front face of the substrate; a first photoluminescence layer covering the first array of LED chips; a second photoluminescence layer covering the second array of LED chips; and a circuit arrangement enabling independent power control to the first and second LED arrays or relative power control to the first and second array of LED chips to control the color temperature of light generated by the LED-filament.

Abstract: An LED-filament comprising: a partially light-transmissive substrate; a plurality of blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the plurality of blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament can further comprise a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: An LED-filament comprising: a partially light transmissive substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material that is in direct contact with and covers all of the plurality of LED chips; and a light scattering layer that is in direct contact with and covers at least the photoluminescence material, wherein the light scattering layer comprises particles of light scattering material, and wherein the photoluminescence material comprises broadband green to red photoluminescence materials and narrowband red photoluminescence material.

Abstract: A full spectrum white light emitting device comprising: a broadband solid-state excitation source operable to generate broadband blue excitation light; and at least one photoluminescence material which generates green to red light, wherein the device generates white light whose intensity over the blue to cyan region of the spectrum has a maximum percentage deviation from the intensity of light of a black-body or CIE Standard Illuminant D of less than 50%.

Abstract: A full spectrum white light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range from about 490 nm to about 680 nm; and a broadband solid-state excitation source operable to generate broadband excitation light with a dominant wavelength in a range from about 420 nm to about 480 nm. The device is operable to generate white light with a Correlated Color Temperature in a range from about 1800K to about 6800K, a CRI R9 less than 90, a spectrum whose intensity decreases from its maximum value in the orange to red region of the spectrum to about 50% of the maximum value at a wavelength in a range from about 645 nm to about 695 nm, and over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of light emitted by the device is less than 60% from the intensity of light of at least one of a black-body curve and CIE Standard Illuminant D of the same Correlated Color Temperature.

Abstract: An LED-filament includes a light-transmissive substrate; a first array of LED chips on a front face of the substrate; a second array of LED chips on the front face of the substrate; a first photoluminescence arrangement covering the first array of LED chips; and a second photoluminescence arrangement covering the second array of LED chips; where the first array of LED chips and the first arrangement generate light of a first color temperature and the second array of LED chips and the second arrangement generate light of a second color temperature.

Abstract: A full spectrum white light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range from about 490 nm to about 680 nm; and a broadband solid-state excitation source operable to generate broadband excitation light with a dominant wavelength in a range from about 420 nm to about 480 nm. The device is operable to generate white light with a Correlated Color Temperature in a range from about 1800K to about 6800K, a CRI R9 less than 90, a spectrum whose intensity decreases from its maximum value in the orange to red region of the spectrum to about 50% of the maximum value at a wavelength in a range from about 645 nm to about 695 nm, and over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of light emitted by the device is less than 60% from the intensity of light of at least one of a black-body curve and CIE Standard Illuminant D of the same Correlated Color Temperature.

Abstract: A full spectrum white light emitting device may include a broadband solid-state excitation source for generating broadband excitation light with a dominant wavelength from about 420 nm to about 480 nm and a full width at half maximum intensity greater than about 25 nm; and a narrowband red photoluminescence material with an emission peak wavelength from about 620 nm to about 640 nm and a full width at half maximum emission intensity of less than about 30 nm; where the device has an efficacy of at least 130 lm/W and generates white light with a CRI Ra?90, and where over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of the white light from the intensity of light of a black-body curve or CIE Standard Illuminant D of the same Correlated Color Temperature is less than about 50%.

Abstract: A full spectrum white light emitting device may include a broadband solid-state excitation source for generating broadband excitation light with a dominant wavelength from about 420 nm to about 480 nm and a full width at half maximum intensity greater than about 25 nm; and a narrowband red photoluminescence material with an emission peak wavelength from about 620 nm to about 640 nm and a full width at half maximum emission intensity of less than about 30 nm; where the device has an efficacy of at least 130 lm/W and generates white light with a CRI Ra?90, and where over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of the white light from the intensity of light of a black-body curve or CIE Standard Illuminant D of the same Correlated Color Temperature is less than about 50%.

Abstract: An LED-filament comprising: a partially light-transmissive substrate; a plurality of blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the plurality of blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament can further comprise a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: An LED-filament includes a partially light-transmissive substrate; blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament can further include a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: An LED-filament includes a light-transmissive substrate; a first array of LED chips on a front face of the substrate; a second array of LED chips on the front face of the substrate; a first photoluminescence arrangement covering the first array of LED chips; and a second photoluminescence arrangement covering the second array of LED chips; where the first array of LED chips and the first arrangement generate light of a first color temperature and the second array of LED chips and the second arrangement generate light of a second color temperature.

Abstract: A full spectrum white light emitting device comprises: photoluminescence materials which generate light with a peak emission wavelength in a range from about 490 nm to about 680 nm; and a broadband solid-state excitation source operable to generate broadband excitation light with a dominant wavelength in a range from about 420 nm to about 480 nm. The device is operable to generate white light with a Correlated Color Temperature in a range from about 1800K to about 6800K, a CRI R9 less than 90, a spectrum whose intensity decreases from its maximum value in the orange to red region of the spectrum to about 50% of said maximum value at a wavelength in a range from about 645 nm to about 695 nm, and over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of light emitted by the device is less than 60% from the intensity of light of at least one of a black-body curve and CIE Standard Illuminant D of the same Correlated Color Temperature.

Abstract: A white light emitting package (20) comprises: a solid-state excitation source (LED 30) for generating excitation light with a dominant wavelength in a range 440 nm to 470 nm; and a layered photoluminescence structure. The layered photoluminescence structure comprises a first photoluminescence layer (32) comprising from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the first photoluminescence layer, and a second photoluminescence layer (34) comprising photoluminescence material for generating light with a peak emission wavelength in a range from 500 nm to 650 nm. The second photoluminescence layer is disposed on the first photoluminescence layer and the first photoluminescence layer is in closer proximity to the solid-state excitation source than the second photoluminescence layer.