Abstract: The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.

Abstract: The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.

Abstract: A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.

Abstract: A control device of a vehicle includes an electronic control unit configured to selectively execute a first operation control for traveling based on a driving operation of a driver and a second operation control for traveling by setting a target traveling state independently of the driving operation of the driver and automatically performing acceleration or deceleration based on the target traveling state, and set an input voltage of an inverter set in the second operation control to be lower than the input voltage of the inverter set in the first operation control when an operating state of a rotating device represented by an output torque and a rotational speed of the rotating device is not changed.

Abstract: A control device of a vehicle includes an electronic control unit configured to selectively execute a first operation control for traveling based on a driving operation of a driver and a second operation control for traveling by setting a target traveling state independently of the driving operation of the driver and automatically performing acceleration or deceleration based on the target traveling state, and set an input voltage of an inverter set in the second operation control to be lower than the input voltage of the inverter set in the first operation control when an operating state of a rotating device represented by an output torque and a rotational speed of the rotating device is not changed.

Abstract: In a liquid crystal display device it is desirable to test in the state of TFT substrates, without reducing the number of TFT substrates to be obtained from one mother TFT substrate, and without increasing the overall size of the TFT substrates. Test terminals are formed on the outside of terminals for driving the liquid crystal display device. The test terminals of the specific TFT substrate are formed in another TFT substrate just below the specific TFT substrate. The area in which the test lines are formed is a space in which a sealing material is formed, between the display area and an end of the lower TFT substrate. Thus, the size of the TFT substrates is not actually increased. A test line area is not separately formed and not discarded, so that the number of TFT substrates to be obtained from one mother TFT substrate is not reduced.

Abstract: A liquid crystal display device includes a TFT substrate having a display area in which pixels are arranged, and a terminal portion, a counter substrate disposed opposite to the TFT substrate, a sealing material formed in a periphery to bond the TFT and counter substrates together, and with a liquid crystal layer interposed between an orientation film formed on the TFT substrate and an orientation film formed on the counter substrate. A first, second, or third color filter is formed corresponding to each of the pixels in the display area of the TFT substrate, and an orientation film stopper is formed by an overlapping portion of the first, second, or third color filter at least in an area between the display area and the terminal portion of the TFT substrate so that a profile of the orientation film is defined by the orientation film stopper.

Abstract: In a liquid crystal display device it is desirable to test in the state of TFT substrates, without reducing the number of TFT substrates to be obtained from one mother TFT substrate, and without increasing the overall size of the TFT substrates. Test terminals are formed on the outside of terminals for driving the liquid crystal display device. The test terminals of the specific TFT substrate are formed in another TFT substrate just below the specific TFT substrate. The area in which the test lines are formed is a space in which a sealing material is formed, between the display area and an end of the lower TFT substrate. Thus, the size of the TFT substrates is not actually increased. A test line area is not separately formed and not discarded, so that the number of TFT substrates to be obtained from one mother TFT substrate is not reduced.

Abstract: In a liquid crystal display device it is desirable to test in the state of TFT substrates, without reducing the number of TFT substrates to be obtained from one mother TFT substrate, and without increasing the overall size of the TFT substrates. Test terminals are formed on the outside of terminals for driving the liquid crystal display device. The test terminals of the specific TFT substrate are formed in another TFT substrate just below the specific TFT substrate. The area in which the test lines are formed is a space in which a sealing material is formed, between the display area and an end of the lower TFT substrate. Thus, the size of the TFT substrates is not actually increased. A test line area is not separately formed and not discarded, so that the number of TFT substrates to be obtained from one mother TFT substrate is not reduced.

Abstract: An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.

Abstract: A touch display panel includes an LCD panel and a touch structure formed on the LCD panel. The LCD panel includes a first substrate, a second substrate and a liquid crystal layer formed between the first substrate and the second substrate. A color filter is formed on a bottom surface of the first substrate adjacent to the liquid crystal layer. A touch structure is formed on the LCD panel. The touch structure includes a first transparent ITO film. The first transparent ITO film defines a plurality of channels thereon. A photo etching barrier layer is formed between the first transparent ITO film and the color filter. The photo etching barrier layer is configured to prevent the channels from extending to the color filter and the liquid crystal layer.

Abstract: A liquid crystal display device includes a TFT substrate having a display area in which pixels are arranged, and a terminal portion, a counter substrate disposed opposite to the TFT substrate, a sealing material formed in a periphery to bond the TFT and counter substrates together, and with a liquid crystal layer interposed between an orientation film formed on the TFT substrate and an orientation film formed on the counter substrate. A first, second, or third color filter is formed corresponding to each of the pixels in the display area of the TFT substrate, and an orientation film stopper is formed by an overlapping portion of the first, second, or third color filter at least in an area between the display area and the terminal portion of the TFT substrate so that a profile of the orientation film is defined by the orientation film stopper.

Abstract: An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.

Abstract: Manufacturing method of a liquid crystal display device having a TFT substrate with a display area in which pixels are arranged, a counter substrate, a sealing material formed in a periphery to bond the TFT and counter substrates, and a liquid crystal layer interposed between an orientation film on the TFT substrate and an orientation film on the counter substrate. The method includes the steps of forming a first color filter, a second color filter, or a third color filter corresponding to each of the pixels in the display area of the TFT substrate, and forming an orientation film stopper by overlapping a portion of the first color filter, the second color filter, or the third color filter, in an area between the display area and the sealing material. A profile of the orientation film formed in the TFT substrate is defined by the orientation film stopper.

Abstract: A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device. In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.

Abstract: A liquid crystal display device includes a TFT substrate with gate lines and drain lines, and pixel electrodes each formed in a region surrounded by the gate lines and drain lines. Protrusions are formed below the gate lines, each of the protrusions having an upper surface and at least one inclined side surface. A gate insulating film is formed over the gate lines, a semiconductor layer formed on the gate insulating film, and drain electrodes formed and source electrodes formed over the semiconductor layer. Channel portions are defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surface of one of the protrusions, the pixel and source electrode being in contact with each other on at least one inclined side surface of the protrusion.

Abstract: A manufacturing method of a display device including a gate electrode film, a first electrode film, a second electrode film, and a conductive film connected to the first electrode film and formed of a conductive layer including a first conductive layer and a second conductive layer formed overlapping the first conductive layer. The method includes the steps of forming the first electrode film and the second electrode film, forming the conductive layer such that the conductive layer is connected to the first electrode film and the second electrode film, and forming the conductive film by removing regions other than predetermined regions of the conductive layer, wherein the conductive layer forming step includes the steps of forming the first conductive layer on the respective upper surfaces of the first electrode film and the second electrode film and forming the second conductive layer on the upper surface of the first conductive layer.

Abstract: A liquid crystal display device includes a TFT substrate with gate lines and drain lines, and pixel electrodes each formed in a region surrounded by the gate lines and drain lines. Protrusions are formed below the gate lines, each of the protrusions having an upper surface and at least one inclined side surface. A gate insulating film is formed over the gate lines, a semiconductor layer formed on the gate insulating film, and drain electrodes formed and source electrodes formed over the semiconductor layer. Channel portions are defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and at least one of the at least one inclined side surface of one of the protrusions, the pixel and source electrode being in contact with each other on at least one inclined side surface of the protrusion.

Abstract: Manufacturing method of a liquid crystal display device having a TFT substrate with a display area in which pixels are arranged, a counter substrate, a sealing material formed in a periphery to bond the TFT and counter substrates, and a liquid crystal layer interposed between an orientation film on the TFT substrate and an orientation film on the counter substrate. The method includes the steps of forming a first color filter, a second color filter, or a third color filter corresponding to each of the pixels in the display area of the TFT substrate, and forming an orientation film stopper by overlapping a portion of the first color filter, the second color filter, or the third color filter, in an area between the display area and the sealing material. A profile of the orientation film formed in the TFT substrate is defined by the orientation film stopper.

Abstract: A liquid crystal display device having a high definition screen in which a pixel electrode is formed in a region surrounded by a gate line and a drain line, and a trapezoidal protrusion having an upper surface and inclined surfaces is formed below the gate line. Since a TFT is formed over a trapezoidal protrusion and a channel portion is formed over the upper surface and the inclined surfaces of the trapezoidal protrusion, the width of the channel portion can be enlarged compared to that of a channel portion formed over a plane. The pixel electrode is in contact with a source electrode at the inclined surface of the trapezoidal protrusion. This configuration allows the TFT and a contact of the pixel electrode and a source electrode to be formed over part of the trapezoidal protrusion.