Abstract: With a new function introduced neither to a file server nor to a client terminal, control of displaying only a file or a folder whose access right is held by a user is enabled by using existing file server and client terminal. A gateway server connected to a file server and a client terminal through a network, which has the function of filtering structure information of a folder and a file that the file server has based on access authorization of a user of the client terminal on the user basis and presenting the filtered structure information of the folder and the file to the client terminal of a user who has access authorization for the folder and the file.

Abstract: An information processing system includes a client device and a server system. The client device executes an application program as a confidential process for performing processing based on confidential information. When a transmission request asking for transmission of confidential information is generated by the application program being executed, the client device transmits, to the server system, the transmission request and confidential process information indicating that the process in which the transmission request was generated is a confidential process. When the server system receives the transmission request and the confidential process information from the client device, the server system transmits stored confidential information in accordance with the received transmission request.

Abstract: With a new function introduced neither to a file server nor to a client terminal, control of displaying only a file or a folder whose access right is held by a user is enabled by using existing file server and client terminal. A gateway server connected to a file server and a client terminal through a network, which has the function of filtering structure information of a folder and a file that the file server has based on access authorization of a user of the client terminal on the user basis and presenting the filtered structure information of the folder and the file to the client terminal of a user who has access authorization for the folder and the file.

Abstract: An information processing system includes a client device and a server system. The client device executes an application program as a confidential process for performing processing based on confidential information. When a transmission request asking for transmission of confidential information is generated by the application program being executed, the client device transmits, to the server system, the transmission request and confidential process information indicating that the process in which the transmission request was generated is a confidential process. When the server system receives the transmission request and the confidential process information from the client device, the server system transmits stored confidential information in accordance with the received transmission request.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: Improving the laser annealing method which is the process of polycrystallizing amorphous silicon, thereby forming with a high throughput silicon thin film in which the crystal particle diameter is sufficiently large. In a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light, one produces a semiconductor thin film which comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam. The crystal grain size is ½ of the hillock interval.