Abstract: The present invention relates to a system and method of remediating heavy metal-contaminated soil using dry disintegration in a particle size-selective manner. The system for remediating contaminated soil comprises: a pretreatment unit for pretreating the contaminated soil to control the water content and the size of the soil; a disintegration unit for disintegrating the pretreated soil into individual particles; a particle separation unit for separating the disintegrated particles a standard particle size; a heavy metal removal unit for peeling off the surface of the separated soil particles larger than the standard particle size using a surface friction force and an impact force to remove heavy metals in dry condition; and a separation and collection unit for separating and collecting the peeled-off surface from the soil particles.

Abstract: The present invention relates to a system and method of remediating heavy metal-contaminated soil using dry disintegration in a particle size-selective manner. The system for remediating contaminated soil comprises: a pretreatment unit for pretreating the contaminated soil to control the water content and the size of the soil; a disintegration unit for disintegrating the pretreated soil into individual particles; a particle separation unit for separating the disintegrated particles a standard particle size; a heavy metal removal unit for peeling off the surface of the separated soil particles larger than the standard particle size using a surface friction force and an impact force to remove heavy metals in dry condition; and a separation and collection unit for separating and collecting the peeled-off surface from the soil particles.

Abstract: In a method for forming a compound oxide film such as a gate oxide film of a MOS device, after a first oxide film (such as a HTO film) is formed on a semiconductor substrate by deposition at a high temperature, a second oxide film is formed below the first oxide film by wet oxidizing the surface of the semiconductor substrate, which results in a compound oxide film consisting of the HTO film and the wet oxide film. Therefore, a high quality oxide film having excellent electrical characteristics can be formed.