Patents by Inventor Jun-gyu Yang

Jun-gyu Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell transistors having limited charge spreading, non-volatile memory devices including such transistors, and methods of formation thereof
    Publication number: 20100117141
    Abstract: In one aspect, a transistor comprises: a substrate body; a tunnel oxide layer on the body; a charge trapping layer on the tunnel oxide layer; a blocking layer on the charge trapping layer; a control gate on the blocking layer, the control gate having first and second sidewalls, the first and second sidewalls being spaced apart from each other by a first distance; and charge confinement features on the body, the charge confinement features being spaced apart from each other by a second distance that is greater than or substantially equal to the first distance, the charge confinement features suppressing or preventing migration of charge present in the charge trapping layer.
    Type: Application
    Filed: November 12, 2009
    Publication date: May 13, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-woon Shin, Young-Kun Park, Jun-gyu Yang, Jae-young Ahn, Ki-hyun Hwang, Si-young Choi